US2003178107A1PendingUtilityA1
Method for reducing copper solubility at the inner surface of a copper tube
Priority: Mar 23, 2002Filed: Mar 19, 2003Published: Sep 25, 2003
Est. expiryMar 23, 2022(expired)· nominal 20-yr term from priority
C23C 18/31
31
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Claims
Abstract
In a method for reducing copper solubility at the inner surface of a copper tube, the process parameters surface treatment (degreasing and pickling), flow conditions (flow speed<1 m/s), temperature (50° C. to 80° C.) and time (1 min to 10 min) are purposefully adjusted to one another, so as to achieve a uniformly directed crystal growth during the course of the tin coating. In particular, the planes (101) of the copper crystals and the tin crystals are aligned parallel to one another and the directions [101] are aligned perpendicular to one another.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for reducing copper solubility at the inner surface of a copper tube, comprising adjusting: surface treatment; flow conditions, including flow speed<1 m/s; temperature between 50° C. and 80° C., and time between 1 min and 10 min with respect to one another, so as to achieve a uniformly directed crystal growth during the course of a tin coating and formation of a copper/tin phase.
2 . The method according to claim 1 , wherein the surface treatment adjusted includes degreasing and pickling.
3 . The method according to claim 1 , in which the plane (101) of the tin crystals is aligned parallel to the inner surface of the copper tube.
4 . The method according to claim 2 , in which the plane (101) of the tin crystals is aligned parallel to the inner surface of the copper tube.
5 . The method according to claim 1 , in which the plane (101) of the tin crystals is aligned parallel to the plane (101) of the copper crystals.
6 . The method according to claim 2 , in which the plane (101) of the tin crystals is aligned parallel to the plane (101) of the copper crystals.
7 . The method according to claim 3 , in which the plane (101) of the tin crystals is aligned parallel to the plane (101) of the copper crystals.
8 . The method according to claim 4 , in which the plane (101) of the tin crystals is aligned parallel to the plane (101) of the copper crystals.
9 . The method according to claim 1 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
10 . The method according to claim 2 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
11 . The method according to claim 3 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
12 . The method according to claim 4 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
13 . The method according to claim 5 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
14 . The method according to claim 6 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
15 . The method according to claim 7 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.
16 . The method according to claim 8 , in which the planes (101) of the copper crystals and the tin crystals are aligned parallel to each other and directions [101] are aligned perpendicular to each other.Join the waitlist — get patent alerts
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