Anodic bonding structure, fabricating method thereof, and method of manufacturing optical scanner using the same

Abstract

Provided are an anodic bonding structure, a fabricating method thereof, and a method of manufacturing an optical scanner using the same. Provided anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost, wherein the uppermost dielectric and the glass substrate are anodic bonded. Provided method of fabricating an anodic bonding structure having a substrate and a glass substrate arranged above the substrate, includes an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost, and an act of anodic bonding the uppermost dielectric with the glass substrate. In the provided structure of depositing the metal layer and the dielectric between the substrate and the glass substrate, the dielectric and the glass substrate or the dielectric and the metal layer are anodic bonded so that a stable performance is attained to manufacture various micro-electromechanical systems (MEMS) devices.

What is claimed is:  
     
         1 . An anodic bonding structure including a substrate and a glass substrate arranged above the substrate, the anodic bonding structure comprising: 
 at least one dielectric and at least one metal layer deposited between the substrate and the glass substrate, with a dielectric arranged uppermost,    wherein the uppermost dielectric and the glass substrate are anodic bonded.    
     
     
         2 . The anodic bonding structure of  claim 1 , wherein metal layers and dielectrics are alternately arranged between the substrate and the glass substrate, 
 wherein the uppermost dielectric anodic bonds with the glass substrate.    
     
     
         3 . The anodic bonding structure of  claim 1 , wherein 
 at least one metal layer includes a first metal layer and a second metal layer, and at least one dielectric includes a first dielectric and a second dielectric; and    the first metal layer, the first dielectric, the second metal layer, and the second dielectric are alternately arranged between the substrate and the glass substrate,    wherein the second dielectric anodic bonds with the glass substrate.    
     
     
         4 . The anodic bonding structure of  claim 1 , wherein 
 at least one dielectric includes a first dielectric and a second dielectric; and    the first dielectric, the metal layer, and the second dielectric are alternately arranged between the substrate and the glass substrate,    wherein the second dielectric anodic bonds with the glass substrate.    
     
     
         5 . The anodic bonding structure of  claim 1 , wherein the substrate is formed of silicon.  
     
     
         6 . The anodic bonding structure of  claim 2 , wherein the substrate is formed of silicon.  
     
     
         7 . The anodic bonding structure of  claim 3 , wherein the substrate is formed of silicon.  
     
     
         8 . The anodic bonding structure of  claim 4 , wherein the substrate is formed of silicon.  
     
     
         9 . The anodic bonding structure of  claim 1 , wherein the dielectric is formed of silicon oxide.  
     
     
         10 . The anodic bonding structure of  claim 2 , wherein the dielectric is formed of silicon oxide.  
     
     
         11 . The anodic bonding structure of  claim 3 , wherein the dielectric is formed of silicon oxide.  
     
     
         12 . The anodic bonding structure of  claim 4 , wherein the dielectric is formed of silicon oxide.  
     
     
         13 . The anodic bonding structure of  claim 1 , wherein the metal layer includes a gold (Au) layer and a chrome (Cr) layer.  
     
     
         14 . The anodic bonding structure of  claim 2 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         15 . The anodic bonding structure of  claim 3 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         16 . The anodic bonding structure of  claim 4 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         17 . An anodic bonding structure including a substrate and a glass substrate arranged above the substrate, the anodic bonding structure comprising: 
 a dielectric formed under the glass substrate; and    at least one dielectric and at least one metal layer deposited between the substrate and the dielectric, with a metal layer arranged uppermost,    wherein the dielectric formed under the glass substrate and the uppermost metal layer are anodic bonded.    
     
     
         18 . The anodic bonding structure of  claim 17 , wherein 
 at least one metal layer includes a first metal layer and a second metal layer, and at least one dielectric includes a first dielectric and a second dielectric; and    the first metal layer, the first dielectric, the second metal layer, and the second dielectric formed under the glass substrate are alternately arranged between the substrate and the glass substrate,    wherein the second metal layer and the second dielectric are anodic bonded.    
     
     
         19 . The anodic bonding structure of  claim 17 , wherein the substrate is formed of silicon.  
     
     
         20 . The anodic bonding structure of  claim 18 , wherein the substrate is formed of silicon.  
     
     
         21 . The anodic bonding structure of  claim 17 , wherein the dielectric is formed of silicon oxide.  
     
     
         22 . The anodic bonding structure of  claim 18 , wherein the dielectric is formed of silicon oxide.  
     
     
         23 . The anodic bonding structure of  claim 17 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         24 . The anodic bonding structure of  claim 18 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         25 . A method of fabricating an anodic bonding structure including a substrate and a glass substrate arranged above the substrate, the method comprising: 
 an act of depositing at least one dielectric and at least one metal layer between the substrate and the glass substrate, with dielectric arranged uppermost; and    an act of anodic bonding the uppermost dielectric with the glass substrate.    
     
     
         26 . A method of fabricating an anodic bonding structure including a substrate and a glass substrate arranged above the substrate, the method comprising: 
 an act of forming a dielectric under the glass substrate;    an act of depositing at least one dielectric and at least one metal layer between the substrate and the dielectric, with a metal layer arranged uppermost; and    an act of anodic bonding the uppermost metal layer with the dielectric under the glass substrate.    
     
     
         27 . The method of  claim 25 , wherein the act of anodic bonding further includes an act of heating at about 300 to 400° C. and applying a pressure of about 800 to 1200 N and a voltage of about 800 to 2000 V to the anodic bonding structure.  
     
     
         28 . The method of  claim 26 , wherein the act of anodic bonding further includes an act of heating at about 300 to 400° C. and applying a pressure of about 800 to 1200 N and a voltage of about 800 to 2000 V.  
     
     
         29 . The method of  claim 25 , wherein the substrate is formed of silicon.  
     
     
         30 . The method of  claim 26 , wherein the substrate is formed of silicon.  
     
     
         31 . The method of  claim 25 , wherein the dielectric is formed of silicon oxide.  
     
     
         32 . The method of  claim 26 , wherein the dielectric is formed of silicon oxide.  
     
     
         33 . The method of  claim 25 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         34 . The method of  claim 26 , wherein the metal layer includes an Au layer and a Cr layer.  
     
     
         35 . A method of manufacturing a top structure of an optical scanner including a rectangular frame, torsion bars extended from the frame and located with a separation region therebetween, a rectangular scanning mirror connected to the torsion bars and arranged at a central portion, and driving comb electrodes formed on the lower surface of the scanning mirror, the method comprising: 
 an act of sequentially depositing a first substrate, a dielectric, and a second substrate;    an act of performing a photolithography process on the upper surface of the second substrate to form the scanning mirror and a lower frame of the frame;    an act of forming pin holes in the scanning mirror and the lower frame, and depositing a metal layer on the scanning mirror and the upper surface of the lower frame;    an act of depositing a dielectric on the upper surface of the metal layer, and anodic bonding the dielectric on the upper surface of the lower frame with a glass substrate;    an act of polishing the first substrate and patterning the upper surface of the frame which will be an upper frame to coat a metal layer on the upper surface of the upper frame; and    an act of forming the upper frame and the torsion bars by etching the first substrate into a predetermined pattern for penetrating a portion corresponding to the separation region and forming the driving comb electrodes on the lower surface of the scanning mirror.    
     
     
         36 . The method of  claim 35 , wherein the act of anodic bonding further includes an act of heating at about 300 to 400° C. and applying a pressure of about 800 to 1200 N and a voltage of about 800 to 2000 V.  
     
     
         37 . The method of  claim 35 , wherein the first and second substrates are formed of silicon.  
     
     
         38 . The method of  claim 35 , wherein the dielectric is formed of silicon oxide.  
     
     
         39 . The method of  claim 36 , wherein the metal layer includes an Au layer and a Cr layer.