Solid-state imaging device and method for manufacturing same

Abstract

In a solid-state imaging device, an insulation film is used to fill a separating region that divides a charge transfer electrode in the row direction, thereby achieving flattening, after which an interlayer insulation film and a metal light-shielding film are formed.

What is claimed is:  
     
         1 . A solid-state imaging device comprising: 
 a photoelectric conversion section formed within a surface region of semiconductor layer of a first conductivity type;    a charge transfer section of a second conductivity type formed adjacent to said photoelectric conversion section within said surface region of said semiconductor layer of said first conductivity type, which receives and transfers a signal charge generated by said photoelectric conversion section;    a read-out section formed in said surface region of said semiconductor layer of said first conductivity type for reading said signal charge generated by said photoelectric conversion section to said charge transfer section; and    a single-layer charge transfer electrode formed over said read-out section and said charge transfer section, with an intervening gate insulation film therebetween,    wherein a region that separates said charge transfer electrode is filled with an insulation film having a height that is equivalent to or less than that of said charge transfer electrode.    
     
     
         2 . A solid-state imaging device according to  claim 1 , wherein a silicide film is formed on a surface of said charge transfer electrode.  
     
     
         3 . A method for manufacturing a solid-state imaging device, said solid-state imaging device comprising: 
 a photoelectric conversion section formed within a surface region of semiconductor layer of a first conductivity type;    a charge transfer section of a second conductivity type formed adjacent to said photoelectric conversion section within said surface region of said semiconductor layer of said first conductivity type, which receives and transfers a signal charge generated by said photoelectric conversion section;    a read-out section formed in said surface region of said semiconductor layer of said first conductivity type for reading said signal charge generated by said photoelectric conversion section to said charge transfer section;    a single-layer charge transfer electrode formed over said read-out section and said charge transfer section, with an intervening gate insulation film therebetween,    an insulation film separating mutually adjacent said charge transfer electrodes; and    a light-shielding film provided on said insulation film, wherein said method comprising: 
 a first step of etching of a first region on an electrically conductive electrode material film on said gate insulation film so as to divide said electrically conductive electrode material film and form said charge transfer electrodes;  
 a second step of forming an insulation film over an entire surface and filling said first region with said insulation film;  
 a third step of removing said insulation film until at least said electrically conductive electrode material film is exposed; and  
 a forth step of etching a second region on said electrically conductive electrode material film so as to form an aperture in said photoelectric conversion region.  
   
     
     
         4 . A method for manufacturing a solid-state imaging device, said solid-state imaging device comprising: 
 a photoelectric conversion section formed within a surface region of semiconductor layer of a first conductivity type;    a charge transfer section of a second conductivity type formed adjacent to said photoelectric conversion section within said surface region of said semiconductor layer of said first conductivity type, which receives and transfers a signal charge generated by said photoelectric conversion section;    a read-out section formed in said surface region of said semiconductor layer of said first conductivity type for reading said signal charge generated by said photoelectric conversion section to said charge transfer section;    a single-layer charge transfer electrode formed over said read-out section and said charge transfer section, with an intervening gate insulation film therebetween,    an insulation film separating mutually adjacent said charge transfer electrodes; and    a light-shielding film provided on said insulation film, wherein said method comprising: 
 a first step of forming an electrically conductive electrode material film on said semiconductor layer of said first conductivity type, with said intervening gate electrode therebetween;  
 a second step of forming a first mask on said electrically conductive electrode material film;  
 a third step of etching a first region of said electrically conductive electrode material film, using said first mask, and dividing said electrically conductive electrode material film in a row direction;  
 a fourth step of forming an insulation film over an entire surface of said electrically conductive electrode material film;  
 a fifth step of performing thermal flow of said insulation film;  
 a sixth step of etching said insulation film so as to expose at least a surface of said electrically conductive electrode material film;  
 a seventh step of forming a second mask over an entire surface of said electrically conductive electrode material film; and  
 an eighth step of etching a second region on said electrically conductive electrode material film, using said second mask, so as to form an aperture in said photoelectric conversion section.  
   
     
     
         5 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said photoelectric conversion section is formed in a self-aligned manner with respect to said second region.  
     
     
         6 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said fourth step including a process of siliciding a surface of said electrically conductive electrode material film.  
     
     
         7 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said third step further including processes of forming a high melting point metal film over an entire surface of said electrically conductive electrode material film, after removing said insulation film until said electrically conductive electrode material film is exposed, and siliciding a surface of said electrically conductive electrode material film by thermal treatment, and removing said high melting point metal film that is not silicided.  
     
     
         8 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said fourth step further including a processes of etching said electrically conductive electrode material film using a mask, and ion implantation of a first conductivity dopant and a second conductivity dopant, using said mask and said electrically conductive electrode material film or said electrically conductive electrode material film as a mask, so as to form said photoelectric conversion section.  
     
     
         9 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said fourth step further including a processes of etching said electrically conductive electrode material film using a mask, and ion implantation of a second conductivity dopant, using said mask and said electrically conductive electrode material film or said electrically conductive electrode material film as a mask, and ion implantation of a first conductivity dopant, within a surface of said second conductivity region, using said charge transfer electrode as a mask, in a self-aligning manner.  
     
     
         10 . A method of manufacturing a solid-state imaging device according to  claim 3 , wherein said forth step further including a process of controlling an angle of incidence of ion implantation of said second conductivity dopant, so as to form a second conductivity region that encroaches under said charge transfer electrode, thereby forming said region in a self-aligning manner.  
     
     
         11 . A method for manufacturing a solid-state imaging device according to  claim 3 , wherein said forth step further including a process of controlling an angle of incidence of ion implantation of a first conductivity dopant, so as to form a first conductivity type semiconductor layer in a self-aligning manner and at a prescribed distance from an edge of said charge transfer electrode.