System and method for heating and cooling wafer at accelerated rates

Abstract

A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.

1 . A system for varying the temperature of a wafer comprising: 
 a first temperature controlled plate;    a second temperature controlled plate comprising proximity pins, the wafer located between the first and second temperature controlled plates and distanced from the second temperature controlled plate by the proximity pins; and    an enclosure surrounding the first and second temperature controlled plates and the wafer, the enclosure comprising a gas input and output, the gas flowing from the input past the wafer and to the output.    
     
     
         2 . The system of  claim 1  wherein the first temperature controlled plate further comprises proximity pins, the proximity pins configured to distance the wafer from the first temperature controlled plate.  
     
     
         3 . The system of  claim 2  wherein the proximity pins are moveable such that the distance of the first and second temperature controlled plate from the wafer may be varied.  
     
     
         4 . The system of  claim 1  further comprising a flow distribution manifold configured to distribute the gas upon the wafer.  
     
     
         5 . The system of  claim 4  wherein the flow distribution manifold comprises laminar flow paths, each laminar flow path comprising a laminar flow element controlling the flow rate of said flow path.  
     
     
         6 . The system of  claim 5  wherein the laminar flow element comprises a channel formed in a substrate.  
     
     
         7 . The system of  claim 5  wherein each of the laminar flow paths further comprise a cavity such that any contaminants or solvents that may be present in the enclosure and that may enter the flow paths will accumulate in the cavity rather than in the laminar flow elements.  
     
     
         8 . The system of  claim 4  wherein the flow distribution manifold is in contact with the first temperature controlled plate, and wherein the gas distributed is at substantially the same temperature as the first temperature controlled plate.  
     
     
         9 . The system of  claim 8  wherein the first temperature control plate comprises flow channels and wherein the gas flows from the manifold and through the channels to the wafer.  
     
     
         10 . The system of  claim 1  further comprising a gas output flow regulator.  
     
     
         11 . A device for controlling the temperature of a wafer comprising: 
 a temperature control element; and    a gas distribution system configured to distribute gas at different points about a surface of the wafer, the gas distribution system comprising a plurality of flow paths, each of the plurality of flow paths comprising a laminar flow element, 
 wherein the wafer is located between the gas distribution system and the temperature control element.  
   
     
     
         12 . The device of  claim 11  wherein the gas distribution system is temperature controlled thereby providing substantially uniform temperature distribution and gas flow distribution across the surface of the wafer.  
     
     
         13 . The device of  claim 11  further comprising an exhaust system configured to regulate the exhaust flow rate of the gas.  
     
     
         14 . The device of  claim 11  wherein the gas distribution system comprises one or more heating and cooling elements.  
     
     
         15 . The device of  claim 12  wherein the gas distribution system and the temperature control element can be adjusted to different temperatures in order to vary the temperature gradient within the device.  
     
     
         16 . A method of conditioning a wafer having a first and a second side within a chamber, the method comprising: 
 heating or cooling the wafer from the first side;    heating or cooling the wafer from the second side;    applying gas to the first side of the wafer, the gas distributed through a plurality of passages such that the gas flow is substantially laminar.    
     
     
         17 . The method of  claim 16  further comprising heating or cooling the gas such that the gas is heated or cooled to substantially the same temperature as the first side of the wafer.  
     
     
         18 . A post exposure bake chamber comprising: 
 a first heating plate;    a second heating plate;    the first and second heating plates configured to heat a wafer placed between the plates, the wafer spaced from the first and second heating plates by proximity pins.    
     
     
         19 . The post exposure bake chamber of  claim 18  further comprising a flow control system having distributed gas flow paths and one or more flow control elements regulating the gas flow rate through the gas flow paths.  
     
     
         20 . The post exposure bake chamber of  claim 19  wherein the flow control system is in contact with the first heating plate such that the gas is heated by the first heating plate.  
     
     
         21 . The post exposure bake chamber of  claim 19  wherein the gas passes from the flow control system through passages in the first heating plate to the wafer.  
     
     
         22 . The post exposure bake chamber of  claim 19  wherein the flow control system comprises a flow channel plate, the one or more flow control elements formed in the flow channel plate.  
     
     
         23 . A wafer conditioning chamber comprising: 
 a first means for changing the temperature of the wafer at a first side of the wafer;    a second means for changing the temperature of the wafer at a second side of the wafer; and    a gas distribution means for distributing a gas at a controlled flow rate at a plurality of locations upon the first or second side of the wafer.    
     
     
         24 . The wafer conditioning chamber of  claim 23  wherein the gas temperature is manipulated by the first or second means for changing the temperature of the wafer.  
     
     
         25 . The wafer conditioning chamber of  claim 24  wherein the gas distribution means comprises flow control means for controlling the flow rate of the gas.