Method for manufacturing transparent conductive panels with a low contact surface impedance

Abstract

A simplified manufacturing process for fabricating transparent conductive panels with a low contact surface impedance employs a yellow light and etching technique to form a wiring structure on a single layer transparent conductive film that requires high transparency, and form a wiring structure on a double layer metal film and transparent conductive film for a connecting area to externally connect to a driver circuit. The invention can achieve a higher reliability and lower cost in the processes of fabricating high resolution products.

What is claimed is:  
     
         1 . A method for manufacturing transparent conductive panels that have a low contact surface impedance, comprising steps of: 
 (A) depositing a transparent conductive film on a transparent substrate;    (B) depositing a metal film on the transparent conductive film;    (C) coating a first photoresist layer on the metal film;    (D) exposing the first photoresist layer by yellow light through a mask which has a first wiring pattern to form the first wiring pattern on the first photoresist layer;    (E)developing the first photoresist layer to form the first wiring pattern on the first photoresist layer;    (F) etching the metal film to form the first wiring pattern on the metal film;    (G) removing the residual photoresist;    (H) coating a second photoresist layer on the transparent conductive film and the metal film which has the first wiring pattern formed thereon;    (I) exposing the second photoresist layer by yellow light through another mask which has a second wiring pattern to form the second wiring pattern on the second photoresist layer;    (J) developing the second photoresist layer to form the second wiring pattern on the second photoresist layer;    (K) etching the transparent conductive film to form the second wiring pattern on the transparent conductive film; and    (L) removing the residual photoresist.    
     
     
         2 . The method of  claim 1 , wherein the step (A) of depositing a transparent conductive film on a transparent substrate is achieved through a vacuum evaporating or a vacuum sputtering process.  
     
     
         3 . The method of  claim 1 , wherein the step (B) of depositing a metal film on the transparent conductive film is achieved through a vacuum evaporating or a vacuum sputtering process.  
     
     
         4 . The method of  claim 1 , wherein the transparent substrate is a transparent glass panel or a transparent plastic panel.  
     
     
         5 . The method of  claim 1 , wherein the transparent conductive film is a transparent conductive oxide.  
     
     
         6 . The method of  claim 5 , wherein the transparent conductive oxide is indium tin oxide.  
     
     
         7 . The method of  claim 1 , wherein the metal film is made of Ag, Cr, Cu, Al, Au, Fe, Ni, W, Pt, Sn, or alloys or combinations thereof.  
     
     
         8 . The method of  claim 1 , wherein the transparent substrate has a thickness ranging from about 0.1 to 1.1 mm.  
     
     
         9 . The method of  claim 1 , wherein the transparent conductive film has a thickness ranging from 500 to 2000 Å.  
     
     
         10 . The method of  claim 1 , wherein the metal film has a thickness ranging from 1000 to 2000 Å.  
     
     
         11 . The method of  claim 1 , wherein the first photoresist layer has a thickness ranging from 5000 to 10000 Å.  
     
     
         12 . The method of  claim 1 , wherein the second photoresist layer has a thickness ranging from 5000 to 10000 Å.  
     
     
         13 . A transparent conductive panel having a low contact surface impedance, comprising: 
 a transparent substrate;    a transparent conductive film covering the transparent substrate and having a second wiring pattern formed thereon; and    a metal film covering the transparent conductive film and having a first wiring pattern formed thereon.    
     
     
         14 . The transparent conductive panel of  claim 13 , wherein the transparent substrate is a transparent glass panel or a transparent plastic panel.  
     
     
         15 . The transparent conductive panel of  claim 13 , wherein the transparent conductive film is a transparent conductive oxide.  
     
     
         16 . The transparent conductive panel of  claim 15 , wherein the transparent conductive oxide is indium tin oxide.  
     
     
         17 . The transparent conductive panel of  claim 13 , wherein the metal film is made of Ag, Cr, Cu, Al, Au, Fe, Ni, W, Pt, Sn, or alloys or combinations thereof.  
     
     
         18 . The transparent conductive panel of  claim 13 , wherein the transparent substrate has a thickness ranging from about 0.1 to 1.1 mm.  
     
     
         19 . The transparent conductive panel of  claim 13 , wherein the transparent conductive film has a thickness ranging from 500 to 2500 Å.  
     
     
         20 . The transparent conductive panel of  claim 13 , wherein the metal film has a thickness ranging from 1000 to 2000 Å.