US2003170916A1PendingUtilityA1

Methods for fabricating separation apparatus

Priority: Oct 23, 1998Filed: Mar 13, 2003Published: Sep 11, 2003
Est. expiryOct 23, 2018(expired)· nominal 20-yr term from priority
Inventors:Terry L. Gilton
B01D 63/088B01D 2313/345B01L 2300/0816G01N 30/6073Y10T436/25375G01N 30/6095G01N 27/44791G01N 30/6065B01D 61/18B01L 2400/0487G01N 30/466B01L 2200/12B01L 3/502707B01L 3/5023G01N 33/54353B01D 63/081B01L 2400/0421
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Claims

Abstract

A sample separation apparatus including a porous, or rough, capillary column. The porous capillary column includes a matrix which defines pores, and may be formed from a material such as porous silicon. Alternatively, the capillary column may have a rough surface of hemispherical grain silicon. The capillary column is defined in a surface of a substrate, such as silicon. The sample separation apparatus may include a stationary phase or a capture substrate disposed on the surfaces thereof. The sample separation apparatus may also include a detector positioned proximate the capillary column. A variation of the sample separation apparatus includes an electrode proximate each end of the capillary column. The sample separation apparatus may be employed to effect various types of chromatographic separation, electrophoretic separation, and analyte identification.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method for fabricating a device for separating at least one constituent of a sample from a remainder of the sample, comprising: 
 providing a silicon substrate;    porifying at least two elongated regions on said silicon substrate to define at least two distinct, unconnected capillary columns, each comprising a matrix in said silicon substrate; and    fabricating at least one detector on said substrate adjacent at least one of said at least two distinct, unconnected capillary columns.    
     
     
         2 . The method of  claim 1 , further comprising applying a stationary phase to said matrix of at least one of said at least two distinct, unconnected capillary columns.  
     
     
         3 . The method of  claim 2 , wherein said applying comprises binding a capture substrate to said matrix of at least one of said at least two distinct, unconnected capillary columns.  
     
     
         4 . The method of  claim 3 , wherein said capture substrate comprises an antibody.  
     
     
         5 . The method of  claim 3 , wherein said capture substrate comprises an antigen.  
     
     
         6 . The method of  claim 1 , further comprising disposing a sealing element over at least one of said at least two distinct, unconnected capillary columns.  
     
     
         7 . The method of  claim 1 , further comprising providing a processor in communication with said at least one detector.  
     
     
         8 . The method of  claim 7 , further comprising fabricating said processor on said substrate.  
     
     
         9 . The method of  claim 1 , further comprising providing a memory device in communication with the separation device.  
     
     
         10 . The method of  claim 9 , further comprising fabricating said memory device on said substrate.  
     
     
         11 . The method of  claim 1 , further comprising: 
 selecting at least one reaction location along at least one of said at least two distinct, unconnected capillary columns, said at least one reaction location continuous with said at least one capillary column and having a width that differs from a width of said at least one capillary column; and    porifying said at least one reaction location.    
     
     
         12 . The method of  claim 1 , further comprising disposing a migration facilitator in communication with at least one of said at least two distinct, unconnected capillary columns.  
     
     
         13 . The method of  claim 1 , further comprising fabricating a first electrode proximate a first end of at least one of said at least two distinct, unconnected capillary columns and a second electrode proximate a second end of said at least one capillary column.  
     
     
         14 . A method for fabricating an ultrasmall flow channel device, comprising: 
 forming at least one elongate trench in a substrate, said at least one elongate trench extending along at least a portion of a major plane of said substrate; and    forming hemispherical grain silicon in said at least one elongate trench.    
     
     
         15 . The method of  claim 14 , further comprising disposing a stationary phase on said hemispherical grain silicon.  
     
     
         16 . The method of  claim 15 , wherein said disposing comprises forming silicon oxide on said hemispherical grain silicon.  
     
     
         17 . The method of  claim 15 , wherein said disposing comprises securing at least one type of capture molecule to at least one region of said at least one elongate trench.  
     
     
         18 . The method of  claim 17 , wherein said disposing comprises securing a plurality of different types of capture molecules to a corresponding plurality of discrete regions of said at least one elongate trench.  
     
     
         19 . The method of  claim 14 , wherein said forming said hemispherical grain silicon in said at least one elongate trench comprises forming said hemispherical grain silicon so as to permit a sample to flow through said at least one elongate trench.  
     
     
         20 . The method of  claim 14 , wherein said forming said at least one elongate trench comprises forming said at least one elongate trench in silicon of said substrate.  
     
     
         21 . A method for fabricating an ultrasmall flow channel device, comprising: 
 forming at least one elongate trench in silicon of a substrate; and    forming hemispherical grain silicon on at least surfaces of said at least one elongate trench.    
     
     
         22 . The method of  claim 21 , wherein said forming said at least one elongate trench comprises etching said at least one elongate trench into said silicon.  
     
     
         23 . The method of  claim 21 , wherein said forming said at least one elongate trench comprises forming said at least one elongate trench to extend along at least a portion of a major plane of said substrate.  
     
     
         24 . The method of  claim 21 , further comprising disposing a stationary phase on said hemispherical grain silicon.  
     
     
         25 . The method of  claim 24 , wherein said disposing comprises forming silicon oxide on said hemispherical grain silicon.  
     
     
         26 . The method of  claim 24 , wherein said disposing comprises securing at least one type of capture molecule to at least one region of said at least one elongate trench.  
     
     
         27 . The method of  claim 26 , wherein said disposing comprises securing a plurality of different types of capture molecules to a corresponding plurality of discrete regions of said at least one elongate trench.  
     
     
         28 . The method of  claim 21 , wherein said forming said hemispherical grain silicon in said at least one elongate trench comprises forming said hemispherical grain silicon so as to permit a sample to flow through said at least one elongate trench.  
     
     
         29 . The method of  claim 21 , wherein said forming said at least one elongate trench comprises forming said at least one elongate trench in silicon of said substrate.  
     
     
         30 . A method for manufacturing a separation device, comprising: 
 forming matrices in a semiconductor substrate to define at least two distinct, unconnected separation substrates, each separation substrate: 
 having a plurality of pores that open to a surface of said substrate; and  
 comprising a sufficient surface area to facilitate separation of a constituent from a sample.  
   
     
     
         31 . The method of  claim 30 , further comprising applying a stationary phase to at least one of said matrices.  
     
     
         32 . The method of  claim 31 , wherein said applying comprises binding a capture substrate to at least one of said matrices.

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