Dielectric material and dielectric sintered body, and wiring board using the same

Abstract

A dielectric material comprising: a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050° C. or lower; and a ceramic filler comprising at least one member of SiO 2 , Al 2 O 3 and 3Al 2 O 3 .2Si 2 , and an alkali metal element, wherein when a total sum of Si converted into SiO 2 , B converted into B 2 O 3 and the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, the content of the alkali metal element converted into A 2 O, which is contained in the glass, is 0.5 mole % or less; and when a total sum of at least one member of SiO 2 , Al 2 O 3 and 3Al 2 O 3 .2SiO 2 , and the alkali metal element converted into A 2 O, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A 2 O, which is contained in the ceramic filler, is 0.5 mole % or less.

What is claimed is:  
     
         1 . A dielectric material comprising: 
 a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050° C. or lower; and    a ceramic filler comprising at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , and an alkali metal element, wherein when a total sum of Si converted into SiO 2 , B converted into B 2 O 3  and the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, the content of the alkali metal element converted into A 2 O, which is contained in the glass, is 0.5 mole % or less; and when a total sum of at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , and the alkali metal element converted into A 2 O, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A 2 O, which is contained in the ceramic filler, is 0.5 mole % or less.    
     
     
         2 . A dielectric material comprising: 
 a glass powder constituted of a glass comprising Si, B and an alkali metal element, the glass being amorphous in sintering at a temperature of 1,050° C. or lower; and    a ceramic filler comprising at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2  but not comprising an alkali metal element,    wherein when a total sum of Si converted into SiO 2 , B converted into B 2 O. and the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, all of which are contained in the glass, is 100 mole %, a content of the alkali metal element converted into A 2 O, which is contained in the glass, is 0.5 mole % or less.    
     
     
         3 . The dielectric material according to  claim 1 , wherein the glass further comprises at least one of Al and an alkaline earth metal element, and when a total sum of Si converted into SiO 2 , B converted into B 2 O 3 , the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, Al converted into Al 2 O 3  in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, is 100 mole %, a total sum of Si converted into SiO 2  and B converted into B 2 O 3  is from 80 to 95 mole %.  
     
     
         4 . The dielectric material according to  claim 2 , wherein the glass further comprises at least one of Al and an alkaline earth metal element, and when a total sum of Si converted into SiO 2 , B converted into B 2 O 3 , the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, Al converted into Al 2 O 3  in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, is 100 mole %, a total sum of Si converted into SiO 2  and B converted into B 2 O 3  is from 80 to 95 mole %.  
     
     
         5 . The dielectric material according to  claim 1 , wherein the ceramic filler does not comprise an alkaline earth metal element.  
     
     
         6 . The dielectric material according to  claim 2 , wherein the ceramic filler does not comprise an alkaline earth metal element.  
     
     
         7 . The dielectric material according to  claim 1 , wherein the ceramic filler further comprises an alkaline earth metal element, and when a total sum of at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , the alkali metal element converted into A 2 O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkaline earth metal element converted into EO is 1 mole % or less.  
     
     
         8 . The dielectric material according to  claim 2 , wherein the ceramic filler further comprises an alkaline earth metal element, and when a total sum of at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , the alkali metal element converted into A 2 O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkaline earth metal element converted into EO is 1 mole % or less.  
     
     
         9 . The dielectric material according to  claim 1 , wherein when a total sum of the glass powder and the ceramic filler is 100% by volume, the glass powder accounts for from 55 to 70% by volume, and the ceramic filler accounts for from 30 to 45% by volume.  
     
     
         10 . The dielectric material according to  claim 2 , wherein when a total sum of the glass powder and the ceramic filler is 100% by volume, the glass powder accounts for from 55 to 70% by volume, and the ceramic filler accounts for from 30 to 45% by volume.  
     
     
         11 . A dielectric sintered body obtained by sintering the dielectric material according to  claim 1  at 800 to 1,050° C., wherein when a total sum of Si converted into SiO 2 , B converted into B 2 O 3 , the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, Al converted into Al 2 O 3  in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the glass, and at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , the alkali metal element converted into A 2 O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A 2 O is 0.5 mole % or less.  
     
     
         12 . A dielectric sintered body obtained by sintering the dielectric material according to  claim 2  at 800 to 1,050° C., wherein when a total sum of Si converted into SiO 2 , B converted into B 2 O 3 , the alkali metal element converted into A 2 O, wherein A represents an alkali metal element, Al converted into Al 2 O 3  in a case where Al is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the glass, and at least one member of SiO 2 , Al 2 O 3  and 3Al 2 O 3 .2SiO 2 , the alkali metal element converted into A 2 O, in a case where the alkali metal element is contained, and the alkaline earth metal element converted into EO, wherein E represents an alkaline earth metal element, in a case where the alkaline earth metal element is contained, all of which are contained in the ceramic filler, is 100 mole %, a content of the alkali metal element converted into A 2 O is 0.5 mole % or less.  
     
     
         13 . A wiring board comprising: a dielectric layer comprising the dielectric sintered body according to  claim 11;  and a conductor layer provided at least one of on a surface of and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.  
     
     
         14 . A wiring board comprising: a dielectric layer comprising the dielectric sintered body according to  claim 12;  and a conductor layer provided at least one of on a surface of and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.  
     
     
         15 . A multilayered wiring board comprising: 
 a dielectric layer comprising a glass having a crystallization temperature exceeding 1,000° C. and a ceramic filler; and    a conductor layer comprising a metal conductor,    wherein a part of the conductor layer is an entire electrode conductor layer having a forming area of 1 cm 2  or more.    
     
     
         16 . The multilayered wiring board according to  claim 15 , wherein the entire electrode conductor layer is at least one of an ground electrode and a capacitor electrode.  
     
     
         17 . The multilayered wiring board according to  claim 15 , wherein the dielectric layer has a specific dielectric constant of 7 or less and a dielectric loss of 0.002 or less in a high-frequency band of 10 GHz or more.  
     
     
         18 . The multilayered wiring board according to  claim 15 , wherein the glass comprises SiO 2 , B 2 O 3 , Al 2 O 3  and an alkaline earth metal oxide, in which a content of a sum of SiO 2  and B 2 O 3  is from 80 to 95 mole %, and a crystal phase caused by a crystallization of the glass does not exist in the dielectric layer.  
     
     
         19 . The multilayered wiring board according to  claim 15 , wherein the glass consists essentially of SiO 2 , B 2 O 3 , Al 2 O 3  and an alkaline earth metal oxide, in which a content of a sum of SiO 2  and B 2 O 3  is from 80 to 95 mole %, and a crystal phase caused by a crystallization of the glass does not exist in the dielectric layer.  
     
     
         20 . A process for producing a multilayered wiring board, which comprises: sintering a multilayered wiring molding comprising a green material comprising a glass having a crystallization temperature exceeding 1,000° C. and a ceramic filler and a conductor layer comprising a metal conductor, a part of the conductor layer being an entire electrode conductor layer having a forming area of 1 cm 2  or more, at a temperature lower than the crystallization temperature of the glass to form a multilayered wiring board.  
     
     
         21 . The process according to  claim 20 , wherein the glass comprises SiO 2  and B 2 O 3 , Al 2 O 3  and an alkaline earth metal oxide, in which a content of a sum of SiO 2  and B 2 O 3  is from 80 to 95 mole %.  
     
     
         22 . The multilayered wiring board according to  claim 15 , further comprising the dielectric sintered body according to  claim 11 , wherein the conductor layer is provided at least one of: on a surface of; and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.  
     
     
         23 . The multilayered wiring board according to  claim 15 , further comprising the dielectric sintered body according to  claim 12 , wherein the conductor layer is provided at least one of: on a surface of; and inside of the dielectric layer, the conductor layer comprising at least one member selected from Ag, Au and Cu.