US2003166335A1PendingUtilityA1

Method of forming wiring in semiconductor devices

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Priority: Nov 30, 2001Filed: Dec 28, 2001Published: Sep 4, 2003
Est. expiryNov 30, 2021(expired)· nominal 20-yr term from priority
Inventors:Hyung Joon KimMin Jae LeeKwon Son
H10P 50/71H10P 14/6334H10D 64/01354H10P 14/69433H10D 64/011
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Claims

Abstract

The invention relates to a method of forming wiring in a semiconductor device. In order to prevent a lift or a crack generated when nitride films having different physical properties come in contact, the invention uses a nitride film having a similar stress characteristic; a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a single type chamber capable of processing wafers one by one, and a nitride film that can be deposited by a low pressure chemical vapor deposition (LPCVD) method in a batch type chamber capable of processing several sheet of wafers.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method of forming wiring in a semiconductor device, comprising the steps of: 
 forming a conductive layer on an insulating film formed on a semiconductor substrate;    depositing a nitride film on said conductive layer by a low-pressure chemical vapor deposition method to form a hard mask layer;    patterning said hard mask layer to form a patterned hard mask;    patterning said conductive layer using the patterned hard mask to form a patterned conductive layer; and    depositing a nitride film by a low-pressure chemical vapor deposition method and then etching a spacer to form a spacer at a sidewall of the patterned conductive layer and the hard mask.    
     
     
         2 . The method of  claim 1 , wherein the process of depositing the nitride film for forming the hard mask and the spacer is performed in a single type chamber having a temperature of 600° C. to 8000° C. and a pressure of 1 Torr to 500 Torr.  
     
     
         3 . The method of  claim 1 , wherein said hard mask is formed in a thickness of 500 Å to 3000 Å.  
     
     
         4 . The method of  claim 1 , wherein the process of depositing the nitride film for forming the spacer is performed in a batch type chamber having a temperature of 600° C. to 800° C. and a pressure of 0.1 Torr to 1 Torr.  
     
     
         5 . The method of  claim 1 , wherein the nitride film for forming the spacer is formed in a thickness of 50 Å to 1000 Å.

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