Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method

Abstract

The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH 3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved. Further, the film forming method for depositing a predetermined film on the surface of the article W to be processed using high-melting point metallic compound gas and reducing gas in the processing container 4 which can be evacuated feeds oxidizing gas into the processing container during or immediately after the film forming process. By doing this, the sheet resistance can be greatly prevented from a change with time.

What is claimed is:  
     
         1 . A precoat film forming method of a film forming device having a loading table for loading an object to be processed internally, comprising: 
 a deposition step of feeding processing gas into said film forming device and depositing a precoat TiN film on a surface of said loading table; and    a stabilization step of reducing and stabilizing said precoat film on said loading table by keeping said precoat film at a temperature higher than a temperature at said deposition step.    
     
     
         2 . A precoat film forming method according to  claim 1 , wherein said reducing reaction at said stabilization step is carried out by exposing said precoat film in NH 3  (ammonia) containing gas.  
     
     
         3 . A precoat film forming method according to  claim 1 , wherein said temperature of said loading table at said stabilization step is almost the same as said process temperature when said film forming process is performed for said object to be processed in said film forming device.  
     
     
         4 . A precoat film forming method according to  claim 1 , wherein in said film forming device, a Ti film or a Ti containing film is deposited on said object to be processed.  
     
     
         5 . A precoat film forming method of a film forming device having a loading table for loading an object to be processed internally, comprising: 
 a deposition step of feeding processing gas into said film forming device and depositing a precoat TiN film on a surface of said loading table and    a stabilization step of oxidizing and stabilizing said precoat film on said loading table by keeping said precoat film at a temperature higher than a temperature at said deposition step.    
     
     
         6 . A precoat film forming method according to  claim 5 , wherein said oxidizing reaction at said stabilization step is carried out by exposing said precoat film in O 2 (oxygen) containing gas or H 2 O (moisture) containing gas.  
     
     
         7 . A precoat film forming method according to  claim 5 , wherein said temperature of said loading table at said stabilization step is almost the same as said process temperature when said film forming process is performed for said object to be processed in said film forming device.  
     
     
         8 . A precoat film forming method according to  claim 5 , wherein in said film forming device, a Ti film or a Ti containing film is deposited on said object to be processed.  
     
     
         9 . An idling method of a film forming device having a loading table with a precoat TiN film formed on a surface in a processing container which can be evacuated so as to form a Ti film or a TiN film on an object to be processed, wherein NH 3  containing gas is fed into said processing container.  
     
     
         10 . An idling method of a film forming device according to  claim 9 , wherein said temperature of said loading table is kept at almost the same temperature as a temperature at the time of said film forming process which is performed in said processing container.  
     
     
         11 . A loading table structure of a film forming device for performing a film forming process for depositing a Ti film or a Ti containing film on an object to be processed, comprising a loading table installed in order to load said object to be processed and a precoat TiN film which is formed on a surface of said loading table and subjected to a stabilization process.  
     
     
         12 . A film forming device for forming a Ti film or a Ti containing film on an object to be processed, comprising: 
 a processing container which can be evacuated,    gas feed means for feeding necessary processing gas into said processing container,    a loading table structure having a loading table for loading said object to be processed, and a precoat Ti film which is formed on a surface of said loading table and subjected to a stabilization process; and    heating means for heating said object to be processed.    
     
     
         13 . A film forming method for performing a film forming process of depositing a predetermined film on a surface of an object to be processed using high-melting point metallic compound gas and reducing gas in a processing container which can be evacuated, comprising a step of feeding oxidizing gas into said processing container during or immediately after said film forming process.  
     
     
         14 . A film forming method according to  claim 13 , wherein said high-melting point metallic compound gas is TiCl 4  gas and said reducing gas is NH 3  gas.  
     
     
         15 . A film forming method according to  claim 13 , wherein said oxidizing gas is O 2  gas.  
     
     
         16 . A film forming method according to  claim 13 , wherein said oxidizing gas is H 2 O gas.