Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process

Abstract

A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

What is claimed is:  
     
         1 . A slurry for CMP comprising: 
 a liquid; and    a plurality of polishing particles contained in the liquid, the polishing particle comprising at least one organic particle and at least one inorganic particle, and the organic particle and the inorganic particles being formed unified by thermocompression bonding.    
     
     
         2 . The slurry for CMP according to  claim 1 , wherein the polishing particle comprising an organic particle and a plurality of inorganic particles.  
     
     
         3 . The slurry for CMP according to  claim 1 , wherein the inorganic particle has oxidizing action.  
     
     
         4 . The slurry for CMP according to  claim 3 , wherein the inorganic particle contains at least one of manganese dioxide and ceria.  
     
     
         5 . The slurry for CMP according to  claim 1 , further comprising an oxidizing agent, the inorganic particle having a catalysis to promote decomposition of the oxidizing agent.  
     
     
         6 . The slurry for CMP according to  claim 5 , wherein the inorganic particle contains at least one of iron, silver, ruthenium and titanium.  
     
     
         7 . The slurry for CMP according to  claim 5 , wherein the polishing particle comprises first and second inorganic particles, the first inorganic particle having oxidizing action and the second inorganic particle having a catalysis to promote decomposition of the oxidizing agent.  
     
     
         8 . The slurry for CMP according to  claim 7 , wherein the first inorganic particle contains at least one of manganese dioxide and ceria, and the second inorganic particle contains at least one of iron, silver, ruthenium and titanium.  
     
     
         9 . The slurry for CMP according to  claim 1 , wherein the organic particle includes at least one of material selected from a group consisting of methacrylate resin, phenolic resin, urea resin, melamine resin, polystyrene resin, polyacetal resin and polycarbonate resin.  
     
     
         10 . The slurry for CMP according to  claim 1 , wherein the primary particle diameters of the inorganic and organic particles are within the range of 5 to 1,000 nm.  
     
     
         11 . A method of forming a slurry for CMP comprising: 
 mixing a plurality of organic particles with a plurality of inorganic particles in powder state and with use of mechanofusion phenomenon, unifying at least one of the plurality of organic particles and at least one of the plurality of inorganic particles, to forme a plurality of polishing particles; and    adding the polishing particles into a liquid.    
     
     
         12 . The method of forming a slurry for CMP according to  claim 11 , wherein after the formation of the plurality of polishing particles with two layered structure, the plurality of polishing particles are mixed with the plurality of organic particles in powder state and with use of mechanofusion phenomenon, at least one of the plurality of polishing particles and at least one of the plurality of organic particles are unified to form a plurality of polishing particles with three layered structure, which is added into the liquid.  
     
     
         13 . The method of forming a slurry for CMP according to  claim 11 , wherein an oxidizing agent is further added into the liquid.  
     
     
         14 . The method of formation a slurry for CMP according to  claim 13 , wherein the oxidizing agent is at least one of hydrogen peroxide, ammonium peroxodisulfate, phosphoric acid, and nitric acid.  
     
     
         15 . A method of manufacturing a semiconductor device comprising: 
 forming a conductive film above a substrate; and    polishing the conductive film by using a slurry for CMP, the slurry including a plurality of polishing particles, the polishing particle comprising at least one organic particle and at least one inorganic particle, and the organic particle and the inorganic particles being unified by thermocompression bonding.    
     
     
         16 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the substrate includes a semiconductor substrate and an insulating film with a wiring groove on its surface formed above the semiconductor substrate, and the conductive film is formed on the insulating film so as to embed the wiring groove, followed by polishing the conductive film so as to remove the conductive film out of the wiring groove.  
     
     
         17 . The method of manufacturing a semiconductor device according to  claim 16 , wherein the conductive film comprises at least one of metal selected from a group consisting of Cu, Al, W, Ti, Mo, Nb, Ta, Ag, V, Ru, and Pt, an alloy including at least one metal selected from the group, a nitride including at least one metal selected from the group , a boride including at least one metal selected from the group, an oxide including at least one material selected from the group, and a mixture including at least one metal selected from the group.  
     
     
         18 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the polishing particle comprises a organic particle and a plurality of inorganic particles.  
     
     
         19 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the inorganic particle has oxidizing action.  
     
     
         20 . The method of manufacturing a semiconductor device according to  claim 19 , wherein the inorganic particle contains at least one of manganese dioxide and ceria.