Method and system for compensating exposure value for exposure process as well as exposure system and semiconductor manufacturing system

Abstract

A method of determining an exposure value for exposing a resist film, comprises the steps of: estimating a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes; and compensating a reference exposure value based on said size variation to obtain a compensated exposure value.

What is claimed is:  
     
         1 . A system for determining an exposure value for exposing a resist film, said system comprising: 
 means for estimating a size variation of a resist pattern from a predetermined target size with reference to a waiting time of a currently processing resist film to be patterned in subsequent exposure process; and    means for compensating a reference exposure value based on said size variation to obtain a compensated exposure value.    
     
     
         2 . The system as claimed in  claim 1 , wherein said compensating means determines said reference exposure value based on an averaged value of past real exposure values for selected wafers having same or similar item to said currently processing wafer.  
     
     
         3 . The system as claimed in  claim 1 , wherein said estimating means estimates said size variation of said resist pattern with further reference to a measured pattern size average value of past-processed wafers, and said predetermined target size.  
     
     
         4 . The system as claimed in  claim 3 , wherein said estimating means estimates said size variation of said resist pattern with further more reference to an exposure coefficient and an adjustment coefficient.  
     
     
         5 . The system as claimed in  claim 4 , wherein said estimating means estimates said size variation of said resist pattern with further more reference to a currently measured atmospheric pressure.  
     
     
         6 . The system as claimed in  claim 1 , wherein said estimating means determines said waiting time to be a time between an output time of a currently processing wafer with said currently processing resist film from a resist film applicator and an input time of said currently processing wafer into an exposure and development apparatus.  
     
     
         7 . The system as claimed in  claim 1 , further comprising: 
 means for verifying whether said compensated exposure value is within a predetermined acceptable range having a center value which corresponds to an averaged value of past real exposure values for selected wafers having same or similar item to said currently processing wafer; and    means for rendering said compensated exposure value effective if said compensated exposure value is within said predetermined acceptable range, and rendering said compensated exposure value ineffective and determining to use a past-real used one of compensated exposure values if said compensated exposure value is not within said predetermined acceptable range.    
     
     
         8 . A computer-readable program for determining an exposure value for exposing a resist film, said program comprising the steps of: 
 estimating a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent exposure process; and    compensating a reference exposure value based on said size variation to obtain a compensated exposure value.    
     
     
         9 . The program as claimed in  claim 8 , wherein said reference exposure value is determined based on an averaged value of past real exposure values for selected wafers having same or similar item to said currently processing wafer.  
     
     
         10 . The program as claimed in  claim 8 , wherein said size variation of said resist pattern is estimated with further reference to a measured pattern size average value of past-processed wafers, and said predetermined target size.  
     
     
         11 . The program as claimed in  claim 10 , wherein said size variation of said resist pattern is estimated with further more reference to an exposure coefficient and an adjustment coefficient.  
     
     
         12 . The program as claimed in  claim 11 , wherein said size variation of said resist pattern is estimated with further more reference to a currently measured atmospheric pressure.  
     
     
         13 . The program as claimed in  claim 8 , wherein said waiting time is determined between an output time of a currently processing wafer with said currently processing resist film from a resist film applicator and an input time of said currently processing wafer into an exposure and development apparatus.  
     
     
         14 . The program as claimed in  claim 8 , further comprising steps of: 
 verifying whether said compensated exposure value is within a predetermined acceptable range having a center value which corresponds to an averaged value of past real exposure values for selected wafers having same or similar item to said currently processing wafer;    rendering said compensated exposure value effective if said compensated exposure value is within said predetermined acceptable range; and    rendering said compensated exposure value ineffective and determining to use a past-real used one of compensated exposure values if said compensated exposure value is not within said predetermined acceptable range.    
     
     
         15 . A semiconductor manufacturing system comprising: 
 a data base for storing any data;    a data transfer line connected to said data base for transferring data to said data base;    at least a resist applicator for applying a resist film on a semiconductor wafer, and said resist applicator being connected to said data transfer line for supplying a first work history data set to said data base through said data transfer line;    at least an exposure apparatus for carrying out an exposure processes to said resist film on said semiconductor wafer, and said exposure apparatus being connected to said data transfer line for supplying a second work history data set to said data base through said data transfer line;    at least a resist pattern size measuring apparatus for measuring a resist pattern size of said semiconductor wafer, and said resist pattern size measuring apparatus being connected to said data transfer line for supplying a resist pattern size data to said data base through said data transfer line;    at least an etching apparatus for etching said semiconductor wafer with said resist pattern;    at least a wafer pattern size measuring apparatus for measuring a wafer pattern size of said semiconductor wafer, and said wafer pattern size measuring apparatus being connected to said data transfer line for supplying a wafer pattern size data to said data base through said data transfer line; and    a controller being connected to said data transfer line for receiving said first and second work history data sets, said resist pattern size data and said wafer pattern size data from said data base, and said controller calculating a compensated exposure value based on said first and second work history data sets, said resist pattern size data and said wafer pattern size data and supplying said compensated exposure value to said exposure apparatus through said data transfer line.    
     
     
         16 . The system as claimed in  claim 15 , wherein said controller further supplies said compensated exposure value to said data base through said data transfer line.  
     
     
         17 . The system as claimed in  claim 15 , wherein said exposure apparatus comprises an exposure and development apparatus for carrying out sequential exposure and development processes to obtain said resist pattern.  
     
     
         18 . The system as claimed in  claim 15 , further comprising a development apparatus separately from said exposure apparatus, and said development apparatus carrying out a development of exposed resist film to obtain said resist pattern.  
     
     
         19 . The system as claimed in  claim 15 , wherein said controller estimates a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes, and said controller compensates a reference exposure time period based on said size variation to obtain a compensated exposure time period.  
     
     
         20 . The system as claimed in  claim 15 , wherein said controller estimates a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent exposure process, and said controller compensates a reference exposure value based on said size variation to obtain a compensated exposure value.  
     
     
         21 . The system as claimed in  claim 15 , further comprising a monitor being connected to said data transfer line for monitoring updated data stored in said data base, and said monitor further verifying whether said compensated exposure value is within a predetermined acceptable range having a center value which corresponds to an averaged value of past real exposure values for selected wafers having same or similar item to said currently processing wafer, and said monitor rendering said compensated exposure value effective if said compensated exposure value is within said predetermined acceptable range; and said monitor rendering said compensated exposure value ineffective and determining to use a past-real used one of compensated exposure values if said compensated exposure value is not within said predetermined acceptable range.  
     
     
         22 . The system as claimed in  claim 15 , further comprising an atmospheric pressure measuring apparatus for measuring an atmospheric pressure, and said atmospheric pressure measuring apparatus being connected to said data transfer line for supplying a measured atmospheric pressure data to said data base through said data transfer line.  
     
     
         23 . An exposure system comprising: 
 a data base for storing any data;    a data transfer line connected to said data base for transferring data to said data base;    at least an exposure apparatus for carrying out an exposure processes to said resist film on said semiconductor wafer, and said exposure apparatus being connected to said data transfer line for supplying a work history data set to said data base through said data transfer line; and    a controller being connected to said data transfer line for receiving said work history data set and a past-exposure value data set from said data base, and said controller calculating a compensated exposure value based on said work history data set and said past-exposure value data set.    
     
     
         24 . The system as claimed in  claim 23 , wherein said controller further supplies said compensated exposure value to said data base through said data transfer line.  
     
     
         25 . The system as claimed in  claim 23 , wherein said exposure apparatus comprises an exposure and development apparatus for carrying out sequential exposure and development processes to obtain said resist pattern.  
     
     
         26 . The system as claimed in  claim 23 , said exposure apparatus is separated from a development apparatus for carrying out a development of exposed resist film to obtain said resist pattern.  
     
     
         27 . The system as claimed in  claim 23 , wherein said controller estimates a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent sequential exposure and development processes, and said controller compensates a reference exposure time period based on said size variation to obtain a compensated exposure time period.  
     
     
         28 . The system as claimed in  claim 23 , wherein said controller estimates a size variation of a resist pattern from a predetermined target size based on a waiting time of a currently processing resist film to be patterned in subsequent exposure process, and said controller compensates a reference exposure value based on said size variation to obtain a compensated exposure value.