Batch-type remote plasma processing apparatus

Abstract

A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

What is claimed is:  
     
         1 . A plasma processing apparatus, comprising: 
 a processing chamber in which a plurality of substrates are stacked and accommodated,    a pair of electrodes extending in the stacking direction of said plurality of substrates, said electrodes being disposed at one side of said plurality of substrates in said processing chamber, and high frequency electricity being applied to said electrodes, and    a gas supply member which supplies processing gas into a space between said pair of electrodes.    
     
     
         2 . A plasma processing apparatus as recited in  claim 1 , wherein said pair of electrodes are respectively covered with protecting members.  
     
     
         3 . A plasma processing apparatus as recited in  claim 1 , wherein an electrical discharging chamber is formed at the one side of said plurality of stacked substrates in said processing chamber such that said electrical discharging chamber is partitioned from said processing chamber such as to include said pair of electrodes, and 
 a gas blowout opening is provided in said electrical discharging chamber for supplying the processing gas into said processing chamber.    
     
     
         4 . A plasma processing apparatus as recited in  claim 3 , wherein said gas blowout opening is located between said pair of electrodes.  
     
     
         5 . A plasma processing apparatus as recited in  claim 1 , wherein said pair of electrodes are rod-like electrodes extending in a direction in which said plurality of stacked substrates are stacked.  
     
     
         6 . A plasma processing apparatus as recited in  claim 5 , further comprising: 
 a substrate holding tool which holds said plurality of stacked substrates, and    a substrate holding tool rotating driving apparatus which rotates said substrate holding tool.    
     
     
         7 . A plasma processing apparatus as recited in  claim 1 , wherein an electrical discharging chamber which is independent from said processing chamber is formed between said pair of electrodes, and 
 a gas blowout opening which supplies the processing gas into said processing chamber is provided in said electrical discharging chamber.    
     
     
         8 . A plasma processing apparatus as recited in  claim 1 , wherein a gas supplying pipe is disposed between said pair of electrodes, and said gas supplying pipe is provided with a gas blowout opening which supplies processing gas into said processing chamber.  
     
     
         9 . A plasma processing apparatus, comprising: 
 a processing chamber in which a plurality of substrates are stacked and accommodated,    a pair of electrodes which is disposed inside and outside of said processing chamber such as to be opposed to each other at one side of said plurality of substrates, and to which high frequency electricity is applied, and    a gas supplying pipe which supplies processing gas into the processing chamber to a place which is away from the space between said pair of electrodes.