Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water

Abstract

Methods for the removal of anti-reflective layers during fabrication of integrated circuits are disclosed. In particular, an anti-reflective pattern or layer can be removed using a solution that includes a fluorine containing compound, an oxidant, and water. The fluorine containing compound in the solution can be hydrogen fluorine containing compound. Preferably, the oxidant in the solution is H 2 O 2 . The oxidant in the solution can also be ozone water. Related compositions are also disclosed.

What is claimed is:  
     
         1 . A method for fabricating an integrated circuit comprising: 
 etching an anti-reflective pattern in an integrated circuit using a solution comprising: 
 a fluorine containing compound;  
 an oxidant; and  
 water.  
   
     
     
         2 . A method according to  claim 1 , wherein the solution comprises more than about 50% of the oxidant by volume.  
     
     
         3 . A method according to  claim 2 , wherein a ratio of the fluorine containing compound to the oxidant in the solution is in a range between about 14:800 and 14:1000 by volume.  
     
     
         4 . A method according to  claim 2 , wherein the solution comprises about 50% to 80% by volume of an H 2 O 2  solution that is 30% pure.  
     
     
         5 . A method according to  claim 1 , wherein the water comprises deionized water.  
     
     
         6 . A method according to  claim 5 , wherein a ratio of the fluorine containing compound to the oxidant to the deionized water in the solution is in a range between about 14:1100:300 to 14:1000:400 by volume.  
     
     
         7 . A method according to  claim 1 , wherein the oxidant comprises ozone water.  
     
     
         8 . A method according to  claim 1 , wherein the oxidant comprises an H 2 O 2  solution that is 30% pure.  
     
     
         9 . A method according to  claim 1 , wherein the fluorine containing compound comprises HF.  
     
     
         10 . A method according to  claim 9 , wherein the HF is 49% pure.  
     
     
         11 . A method according to  claim 1 , wherein the anti-reflective pattern comprises a silicon oxynitride layer.  
     
     
         12 . A method for fabricating an integrated circuit comprising: 
 removing an anti-reflective layer in the integrated circuit using a solution comprising: 
 a fluorine containing compound;  
 an oxidant; and  
 water.  
   
     
     
         13 . A method according to  claim 12 , wherein the anti-reflective pattern is formed using one of a chemical vapor deposition and a physical vapor deposition.  
     
     
         14 . The method of  claim 12 , wherein the water comprises deionized water that is above 0% to about 50% by volume of the solution.  
     
     
         15 . The method of  claim 12 , wherein the act of removing the anti-reflective layer is followed by forming a gate electrode from the layer.  
     
     
         16 . A method for fabricating an integrated circuit comprising: 
 forming a conductive layer on an integrated circuit substrate;    forming an anti-reflective layer on the conductive layer;    forming a photoresist pattern on the anti-reflective layer;    etching the anti-reflective layer and the conductive layer using the photoresist pattern as an etching mask to provide an anti-reflective pattern and a gate electrode;    removing the photoresist pattern; and    removing the anti-reflective pattern using a solution containing a fluorine containing compound, an oxidant, and water.    
     
     
         17 . A method according to  claim 16 , wherein the conductive layer comprises doped polysilicon.  
     
     
         18 . A method according to  claim 16 , wherein the anti-reflective layer comprises a silicon oxynitride layer.  
     
     
         19 . A method according to  claim 16 , wherein the fluorine containing compound comprises HF.  
     
     
         20 . A method according to  claim 16 , wherein the oxidant comprises H 2 O 2 .  
     
     
         21 . A method according to  claim 16 , wherein the act of forming the antireflective layer comprises forming the anti-reflective layer using one of a chemical vapor deposition and a physical vapor deposition.  
     
     
         22 . A method according to  claim 16 , wherein the solution comprises HF and H 2 O 2 .  
     
     
         23 . A method according to  claim 22 , wherein 49% purity of HF solution and 30% purity of H 2 O 2  solution are mixed in a ratio of 14:800 to 14:1400 by volume in the solution.  
     
     
         24 . A method according to  claim 16 , wherein the water comprises deionized water.  
     
     
         25 . A method according to  claim 24 , wherein the solution comprises above 0% to 50% deionized water by volume.  
     
     
         26 . A method according to  claim 16 , wherein the solution comprises 30% purity of H 2 O 2  that is 50% or more of the solution by volume.  
     
     
         27 . A method according to  claim 23 , wherein the amount of the H 2 O 2  solution is in the range of 50 to 80% by volume of the solution.  
     
     
         28 . A method according to  claim 16 , wherein the solution comprises HF and ozone water.  
     
     
         29 . An anti-reflective layer removal composition comprising: 
 a solution of a fluorine containing compound;    an oxidant; and    water.    
     
     
         30 . A composition according to  claim 29 , wherein the solution comprises more than about 50% oxidant by volume.  
     
     
         31 . A composition according to  claim 30 , wherein a ratio of the fluorine containing compound to the oxidant in the solution is in a range between about 14:800 and 14:1000 by volume.  
     
     
         32 . A composition according to  claim 30 , wherein the solution comprises less than about 80% oxidant by volume.  
     
     
         33 . A composition according to  claim 29 , wherein the water comprises deionized water.