Semiconductor device and method for fabricating the same

Abstract

After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film and formed on a gate insulating film provided on a semiconductor substrate, and an upper-layer gate electrode composed of a tungsten film an formed on the lower-layer gate electrode; and    a capacitor comprised of a lower electrode composed of the titanium nitride film, a capacitor insulating film formed on the lower electrode, and an upper electrode composed of the tungsten film and formed on the capacitor insulating film.    
     
     
         2 . The device of  claim 1 , wherein the lower-layer gate electrode and the lower electrode are deposited by chemical vapor deposition.  
     
     
         3 . The device of  claim 1 , wherein the upper-layer gate electrode and the upper electrode are deposited by sputtering.  
     
     
         4 . A semiconductor device comprising: 
 a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film and formed on a gate insulating film provided on a semiconductor substrate, and an upper-layer gate electrode composed of a tungsten film and formed on the lower-layer gate electrode; and    a resistor composed of the titanium nitride film.    
     
     
         5 . The device of  claim 4 , wherein the lower-layer gate electrode and the resistor are deposited by chemical vapor deposition.  
     
     
         6 . The device of  claim 4 , wherein the upper-layer gate electrode is deposited by sputtering.  
     
     
         7 . A semiconductor device comprising: 
 a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film deposited by chemical vapor deposition on a semiconductor substrate and of an upper-layer gate electrode composed of a tungsten film deposited by sputtering on the titanium nitride film; and    a capacitor comprised of a lower electrode composed of the titanium nitride film, of a capacitor insulating film formed on the lower electrode, and of an upper electrode composed of the tungsten film formed on the capacitor insulating film.    
     
     
         8 . A semiconductor device comprising: 
 a multilayer gate electrode comprised of a lower-layer gate electrode composed of a titanium nitride film deposited by chemical vapor deposition on a semiconductor substrate and of an upper-layer gate electrode composed of a tungsten film deposited by sputtering on the titanium nitride film; and    a resistor composed of the titanium nitride film.