Semiconductor device, liquid crystal display, and electronic equipment including the same

Abstract

The semiconductor device according to the present invention comprises at least one first semiconductor circuit 2 in which first currents (Ihνa 1 to Ihνa 4 ) excited by external light (hν) are produced. It further comprises at least one second semiconductor circuit ( 3 ) which is electrically connected to the first semiconductor circuit ( 2 ) and in which second currents (Ihνb 1 to Ihνb 4 ) excited based on the external light (hν) and canceling a part or all of the voltage fluctuation produced by the current increment of the first currents (Ihνa 1 to Ihνa 4 ) when the external light (hν) shines are produced.

1 . A semiconductor device comprising: 
 at least one first semiconductor circuit in which a first current excited by external light is generated; and    at least one second semiconductor circuit which is electrically connected to said first semiconductor circuit and is excited by said external light and in which a second current is generated to cancel a part or all of the voltage fluctuations produced by a current increment of said first current when said external light is shone.    
     
     
         2 . The semiconductor device as defined in  claim 1 , wherein: said first semiconductor circuit increases voltage due to said first current; and 
 said second semiconductor circuit decreases voltage due to said second current.    
     
     
         3 . The semiconductor device as defined in  claim 1 , wherein: said first semiconductor circuit decreases voltage due to said first current; and 
 said second semiconductor circuit increases voltage due to said second current.    
     
     
         4 . The semiconductor device as defined in  claim 1 , wherein said second semiconductor circuit is disposed close to said first semiconductor circuit.  
     
     
         5 . The semiconductor device as defined in  claim 1 , wherein said first semiconductor circuit includes a high resistance circuit.  
     
     
         6 . The semiconductor device as defined in  claim 5 , wherein: said first semiconductor circuit includes an operational amplifier; and 
 said second semiconductor circuit is connected to an output terminal of said operational amplifier.    
     
     
         7 . The semiconductor device as defined in  claim 6 , wherein: said first semiconductor circuit further includes a voltage dividing resistance formed at the output terminal of said operational amplifier; and 
 said second semiconductor circuit provides said second current with a magnitude to cancel the voltage fluctuations due to said first current and a current generated at said voltage dividing resistance.    
     
     
         8 . The semiconductor device as defined in  claim 5 , wherein: said first semiconductor circuit includes a dynamic type operation circuit and charging and discharging means which are connected to an output terminal of said dynamic type operation circuit to charge and discharge a current; and 
 said second semiconductor circuit is connected to said output terminal and is constituted so that said second current flows toward said charging and discharging means.    
     
     
         9 . The semiconductor device as defined in  claim 5 , wherein: said first semiconductor circuit includes switching means; and 
 said second semiconductor circuit is provided in said switching means.    
     
     
         10 . The semiconductor device as defined in  claim 9 , wherein: said switching means is formed of a plurality of transmission gates; and 
 said second semiconductor circuit is provided in each of said plural transmission gates.    
     
     
         11 . The semiconductor device as defined in  claim 10 , wherein said second semiconductor circuit is formed of a junction diode.  
     
     
         12 . The semiconductor device as defined in  claim 5 , wherein: said first semiconductor circuit includes at least one first conductive type transistor; 
 said second semiconductor circuit includes at least one second conductive type transistor with a conductivity opposite to that of said first conductive type transistor; and    a complementary relationship is formed between said first and second conductive transistors.    
     
     
         13 . A semiconductor device comprising: 
 a first element of a second conductive type which is formed in a first region of a first conductive type formed in a semiconductor substrate and includes a gate electrode, a source region of a first impurity region of a second conductive type and a drain region of a second impurity region of the second conductive type, said source and drain regions are electrically connected to said first region and has a conductivity opposite to said first region; and    a second element which is formed in said semiconductor substrate and includes at least a third impurity region of the first conductive type formed in the vicinity of said first region, said third impurity region being electrically connected to at least said first region.    
     
     
         14 . The semiconductor device as defined in  claim 13 , wherein: an external light irradiates from one side of said semiconductor substrate in which said first, second, and third impurity regions are not formed; 
 said first element of said second conductive type is formed with an n-type transistor; and    said third impurity region in said second element is formed to be larger than said first or second impurity region in the first element of said second conductive type.    
     
     
         15 . The semiconductor device as defined in  claim 13 , wherein: an external light irradiates from one side of said semiconductor substrate in which said first, second, and third impurity regions are not formed; and 
 said third impurity region in said second element is formed to be such a size that the amount of carriers produced in said third impurity region due to said external light is substantially equal to the amount of carriers produced in said first or second impurity region in the first element of said second conductive type.    
     
     
         16 . The semiconductor device as defined in  claim 13 , wherein a distance between said third impurity region and said second impurity region is formed in the minimum size under the design rules.  
     
     
         17 . The semiconductor device as defined in  claim 13 , wherein said third impurity region is formed like a ring around said first and second impurity regions.  
     
     
         18 . The semiconductor device as defined in  claim 13 , wherein: an external light irradiates from one side of said semiconductor substrate in which said first, second, and third impurity regions are not formed; 
 said first element of said second conductive type is formed with an p-type transistor; and    said third impurity region in said second element is formed to be smaller than said first or second impurity region in the first element of said second conductive type.    
     
     
         19 . A liquid crystal display device comprising: 
 a liquid crystal display panel includes a transparent or translucent substrate; and    the semiconductor device as defined in  claim 1  which is formed on the same substrate as said liquid crystal display panel.    
     
     
         20 . A liquid crystal display device, wherein the semiconductor device as defined in  claim 1  is incorporated in a liquid crystal drive circuit which drives pixel electrodes disposed in a matrix-like pattern of a liquid crystal display panel.  
     
     
         21 . Electronic equipment, comprising the liquid crystal display device as defined in  claim 19 .  
     
     
         22 . Electronic equipment, comprising the liquid crystal display device as defined in  claim 20.