US2003155247A1PendingUtilityA1

Process for electroplating silicon wafers

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Assignee: SHIPLEY CO LLCPriority: Feb 19, 2002Filed: Feb 19, 2002Published: Aug 21, 2003
Est. expiryFeb 19, 2022(expired)· nominal 20-yr term from priority
Inventors:Takeshi MiuraMasaru SeitaYasuo Ota
C25D 7/123C25D 3/38
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Claims

Abstract

An electroplating solution comprising copper ions and a complexing agent for the copper ions and has a pH in the range of 4 to 10. The electroplating solution of the present invention makes it possible to fill trenches or via holes on silicon wafers for providing copper wiring with copper in a defect-free manner by preventing the seed layer from dissolving in the plating solution.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . An electroplating solution comprising copper ions and a complexing agent for the copper ions and having a pH in the range of 4 to 10.  
     
     
         2 . An electroplating process using an electroplating solution comprising copper ions and a completing agent for the copper ions and having a pH in the range of 4 to 10.  
     
     
         3 . The electroplating process according to  claim 2 , wherein the plating is applied on the silicon wafer on which a conductive seed layer has been formed.  
     
     
         4 . A silicon wafer plated with an electroplating solution comprising copper ions and a complexing agent for the copper ions and having a pH in the range of 4 to 10.

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