Fabrication method of semiconductor integrated circuit device

Abstract

A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, it is possible to prevent run-off of ionized amine into the ultrapure water.

What is claimed is:  
     
         1 . A method of fabrication of a semiconductor integrated circuit device, comprising the steps of: 
 (a) feeding a cleaning apparatus with ultrapure water through a filter having a cation removing property; and    (b) cleaning, with the ultrapure water fed through said filter, a main surface of a wafer on which a device is to be formed and which includes a portion from which a single crystal region having silicon as a principal component is exposed.    
     
     
         2 . A fabrication method according to  claim 1 , wherein said filter is a cation removing filter.