US2003140941A1PendingUtilityA1

CVD apparatus

Assignee: SEMICONDUCTOR ENERGY LABPriority: Sep 9, 1986Filed: Jan 10, 2003Published: Jul 31, 2003

Est. expirySep 9, 2006(expired)· nominal 20-yr term from priority

Inventors:Takashi Inushima Shigenori Hayashi Toru Takayama Masakazu Odaka Naoki Hirose

H10P 14/69433H10P 14/6922H10P 14/6682H10P 14/6336H10P 14/662H10P 14/6686H10P 14/6338H10P 14/69215Y10S148/045Y10S148/043Y10S148/017Y10S438/905C23C 16/488C23C 16/517C23C 16/482C23C 16/402C23C 16/4405C23C 16/56C23C 16/0245C23C 14/24C23C 16/48

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Claims

Abstract

An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.

Claims

exact text as granted — not AI-modified

What is claimed is:  
     
         1 . A method of forming a device comprising the steps of: 
 forming a layer comprising silicon oxide over a substrate by plasma CVD using a reactive gas comprising tetra-ethyl-oxy-silane (Si(OC 2 H 5 ) 4 ) and an oxide gas;    cleaning an inside of a reaction chamber in which said layer has been formed.

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