Method and apparatus for cleaning semiconductor device and method of fabricating semiconductor device

Abstract

Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.

What is claimed is:  
     
         1 . A method of cleaning a semiconductor device, comprising: 
 a first step of preparing a wafer having a surface on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed; and    a second step of selectively cleaning only a surface edge, a back, and a bevel of said wafer.    
     
     
         2 . The method of cleaning a semiconductor device according to  claim 1 , wherein said second step includes: 
 a step of applying a chemical containing hydrochloric acid only to the surface edge, back, and bevel of said wafer;    a step of rinsing only the surface edge, back, and bevel of said wafer with pure water;    a step of applying a chemical containing hydrogen fluoride only to the surface edge, back, and bevel of said wafer; and    a step of rinsing again only the surface edge, back, and bevel of said wafer with pure water.    
     
     
         3 . The method of cleaning a semiconductor device according to  claim 2 , wherein as said chemical containing hydrochloric acid, a solution of hydrochloric acid and hydrogen peroxide is used.  
     
     
         4 . The method of cleaning a semiconductor device according to  claim 2 , wherein as said chemical containing hydrochloric acid, a solution of hydrochloric acid and nitric acid is used.  
     
     
         5 . The method of cleaning a semiconductor device according to  claim 4 , wherein as the solution of hydrochloric acid and nitric acid, a solution having the mixing ratio of hydrochloric acid of 30 wt % and nitric acid of 70 wt %=3:1is used.  
     
     
         6 . The method of cleaning a semiconductor device according to  claim 2 , wherein as a chemical containing hydrogen fluoride, an organic solvent in which ammonium fluoride is dissolved is used.  
     
     
         7 . The method of cleaning a semiconductor device according to  claim 2 , wherein said step of applying the chemical containing hydrochloric acid only to the surface edge, back, and bevel of said wafer comprises: 
 a step of rotating said wafer;    a step of discharging N 2 , dry air, or pure water toward the surface of said wafer; and    a step of discharging said chemical toward the back of said wafer.    
     
     
         8 . A method of fabricating a semiconductor device, comprising: 
 a first step of forming a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film on the surface of a wafer; and    a second step of selectively cleaning a surface edge, a back, and a bevel of said wafer.    
     
     
         9 . The method of fabricating a semiconductor device according to  claim 8 , wherein said second step comprises: 
 a step of applying a chemical containing hydrochloric acid only to the surface edge, back, and bevel of said wafer;    a step of rinsing only the surface edge, back, and bevel of said wafer with pure water;    a step of applying a chemical containing hydrogen fluoride only to the surface edge, back, and bevel of said wafer; and    a step of rinsing again only the surface edge, back, and bevel of said wafer with pure water.    
     
     
         10 . The method of fabricating a semiconductor device according to  claim 9 , wherein as said chemical containing hydrochloric acid, a solution of hydrochloric acid and hydrogen peroxide is used.  
     
     
         11 . The method of fabricating a semiconductor device according to  claim 9 , wherein as said chemical containing hydrochloric acid, a solution of hydrochloric acid and nitric acid is used.  
     
     
         12 . The method of fabricating a semiconductor device according to  claim 11 , wherein as said solution of hydrochloric acid and nitric acid, a solution having the mixing ratio of hydrochloric acid of 30 wt % and nitric acid of 70 wt %=3:1 is used.  
     
     
         13 . The method of fabricating a semiconductor device according to  claim 9 , wherein as said chemical containing hydrogen fluoride, an organic solvent in which ammonium fluoride is dissolved is used.  
     
     
         14 . The method of fabricating a semiconductor device according to  claim 9 , wherein said step of applying said chemical containing hydrochloric acid only to the surface edge, back, and bevel of said wafer comprises: 
 a step of rotating said wafer;    a step of discharging N 2 , dry air, or pure water toward the surface of said wafer; and    a step of discharging said chemical toward the back of said wafer.    
     
     
         15 . An apparatus for cleaning a semiconductor device, comprising: 
 means for rotating a wafer;    wafer surface-side discharging means for discharging N 2 , dry air, or pure water toward the surface of said wafer to thereby protect the surface of said wafer; and    wafer back-side discharging means for discharging said chemical or pure water toward the back of said wafer.