Electrolytic processing device and substrate processing apparatus

Abstract

There is provided an electrolytic processing device including: a processing electrode brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of the spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section or supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

1 . An electrolytic processing device, comprising: 
 a processing electrode brought into contact with or close to a workpiece;    a feeding electrode for supplying electricity to the workpiece;    an ion exchanger disposed in at least one of spaces between the workpiece and said processing electrode, and between the workpiece and said feeding electrode;    a power source for applying a voltage between said processing electrode and said feeding electrode; and    a liquid supply section for supplying liquid to the space between the workpiece and at least one of said processing electrode and said feeding electrode, in which said ion exchanger is present.    
     
     
         2 . The electrolytic processing device according to  claim 1 , wherein said liquid is pure water, liquid having electric conductivity of not more than  500  pS/cm.  
     
     
         3 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger is disposed separately in the space between said processing electrode and the workpiece, and in the space between said feeding electrode and the workpiece.  
     
     
         4 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger is disposed, as an integrated structure, in both of the spaces between said processing electrode and the workpiece, and between said feeding electrode and the workpiece.  
     
     
         5 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger covers the surface, to be processed, of the substrate, and is disposed in both of the spaces between said processing electrode and the workpiece, and between said feeding electrode and the workpiece.  
     
     
         6 . The electrolytic processing device according to  claim 5 , wherein said ion exchanger is stretched between a supply shaft and a rewind shaft, and is taken up sequentially.  
     
     
         7 . The electrolytic processing device according to  claim 6 , wherein said processing electrode and said feeding electrode are mounted alternately on said ion exchanger at a given pitch along the length of said ion exchanger.  
     
     
         8 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger has water-absorbing properties.  
     
     
         9 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger has one or both of an anion-exchange ability and a cation-exchange ability.  
     
     
         10 . The electrolytic processing device according to  claim 1 , wherein said ion exchanger is covered with a porous body.  
     
     
         11 . The electrolytic processing device according to  claim 1 , further comprising a regeneration section for regenerating said ion exchanger.  
     
     
         12 . An electrolytic processing device comprising: 
 a processing electrode brought into contact with or close to a workpiece;    a feeding electrode for supplying electricity to the workpiece;    a power source for applying a voltage between said processing electrode and said feeding electrode; and    a liquid supply section for supplying pure water or a liquid having an electric conductivity of not more than 500 μS/cm between the workpiece and said processing electrode.    
     
     
         13 . The electrolytic processing device according to  claim 2  or  12 , wherein said pure water is ultrapure water.  
     
     
         14 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode is in the shape of a flat rectangular plate.  
     
     
         15 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode is in the shape of a column, and is disposed such that a central axis thereof is parallel to the surface, to be processed, of the workpiece.  
     
     
         16 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode is in a spherical or oval spherical shape.  
     
     
         17 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode has a depressed portion or a raised portion conforming to the configuration of the workpiece, and processing of the workpiece is conducted by allowing the workpiece to face said depressed portion or said raised portion.  
     
     
         18 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of between said processing electrode and the workpiece, and between said feeding electrode and the workpiece make a relative movement.  
     
     
         19 . The electrolytic processing device according to  claim 18 , wherein said relative movement is rotation, reciprocation, eccentric rotation or scroll movement, or a combination thereof.  
     
     
         20 . The electrolytic processing device according to  claim 1  or  12 , wherein said processing electrode and said feeding electrode are disposed such that one of the electrodes surrounds the other.  
     
     
         21 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode is in the shape of a fan.  
     
     
         22 . The electrolytic processing device according to  claim 1  or  12 , wherein at least one of said processing electrode and said feeding electrode is disposed linearly or in a circle.  
     
     
         23 . A substrate processing apparatus, comprising: 
 a substrate carry-in and carry-out section for carrying in and carrying out a substrate;    an electrolytic processing device; and    a transport device for transporting the substrate between said substrate carry-in and carry-out section and said electrolytic processing device;    wherein said electrolytic processing device comprises a processing electrode brought into contact with or close to a workpiece, a feeding electrode for supplying electricity to the workpiece, an ion exchanger disposed in at least one of a spaces between the workpiece and said processing electrode, and between the workpiece and said feeding electrode, a power source for applying a voltage between said processing electrode and said feeding electrode, and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of said processing electrode and said feeding electrode, in which said ion exchanger is present.    
     
     
         24 . A substrate processing apparatus, comprising: 
 a substrate carry-in and carry-out section for carrying in and carrying out a substrate;    an electrolytic processing device; and    a transport device for transporting the substrate between said substrate carry-in and carry-out section and said electrolytic processing device;    wherein said electrolytic processing device comprises a processing electrode brought into contact with or close to a workpiece, a feeding electrode for supplying electricity to the workpiece, a power source for applying a voltage between said processing electrode and said feeding electrode, and a liquid supply section for supplying pure water or a liquid having an electric conductivity of not more than 500 μS/cm between the workpiece and said processing electrode.    
     
     
         25 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a cleaning device for cleaning the processed substrate by said electrolytic processing device.  
     
     
         26 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a CMP device for chemical mechanical polishing the surface of the substrate.  
     
     
         27 . The substrate processing apparatus according to  claim 26 , further comprising a cleaning device for cleaning the polished substrate by said CMP device.  
     
     
         28 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a film-forming device for forming a film as a portion to be processed in the surface of the substrate.  
     
     
         29 . The substrate processing apparatus according to  claim 28 , further comprising at least one of a cleaning device for cleaning the portion to be processed having been formed by said film-forming device and an annealing device for annealing said portion to be processed.  
     
     
         30 . The substrate processing apparatus according to  claim 29 , further comprising a bevel-etching device for etching the portion to be processed formed in or adhering to a peripheral portion of the substrate.  
     
     
         31 . The substrate processing apparatus according to  claim 30 , wherein said etching of the portion to be processed in the bevel-etching device is conducted by electrolytic processing.  
     
     
         32 . The substrate processing apparatus according to  claim 26 , further comprising a film thickness-measuring section for measuring a film thickness of the portion to be processed during or after the polishing in said CMP device.  
     
     
         33 . The substrate processing apparatus according to  claim 28 , further comprising a film thickness-measuring section for measuring the film thickness of the portion to be processed during or after the film formation in the film-forming device.  
     
     
         34 . The substrate processing apparatus according to  claim 28 , wherein the film formation in the film-forming device is conducted by plating.  
     
     
         35 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a monitor for monitoring at least one of electrolytic current and electrolytic voltage when the voltage is applied between said feeding electrode and said processing electrode.  
     
     
         36 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a drying device for finally drying the processed substrate.  
     
     
         37 . The substrate processing apparatus according to  claim 35 , wherein said monitor further monitors a change in the state of the substrate being processed to detect the end point of processing.  
     
     
         38 . The substrate processing apparatus according to  claim 23  or  24 , further comprising a film-thickness detection section for detecting the end point of processing.