Wafer cleaning device, wafer cleaning method and chemical mechanical polishing machine

Abstract

Heretofore, a wafer cleaning device used for CMP and others cannot adjust parallelism between a wafer and a roll brush quantitatively and cannot grasp the change of the parallelism. Then, in a wafer cleaning device provided with a roll brush one end in an axial direction of which is supported so that the roll brush can be rolled around the axis freely for performing cleaning by touching the rolled contact surface of the rolled roll brush to the cleaned surface of a wafer, one end of the roll brush and others is supported so that the roll brush and others can be displaced by a dial adjusting screw to enable the axis to be tilted to the cleaned surface of the wafer.

What is claimed is:  
     
         1 . A wafer cleaning device, comprising: 
 a roll brush one end in an axial direction of which is supported so that the roll brush can be rolled around an axis freely, wherein: 
 one end of said roll brush is supported so that the roll brush can be displaced by adjustment means to enable the axis of said roll brush to be tilted to the cleaned surface of said wafer.  
   
     
     
         2 . A wafer cleaning device, comprising: 
 a roll brush one end in the axial direction of which is supported so that the roll brush can be rolled around said axis freely; and    a driven roll which is located on the side reverse to said roll brush with the wafer between them and one end in the axial direction of which is supported so that the roll brush can be rolled around said axis freely, wherein: 
 one end of said roll brush and/or said driven roll is supported so that the roll brush can be displaced by adjustment means to enable the axis of said roll brush and/or said driven roll to be tilted to the cleaned surface of said wafer.  
   
     
     
         3 . A wafer cleaning device according to  claim 1  or  2 , wherein: 
 said adjust means is a dial adjusting screw.  
 
     
     
         4 . A wafer cleaning device according to  claim 1 , wherein: 
 displacement detecting means for detecting the change of distance between the cleaned surface of said wafer and said roll brush is provided.    
     
     
         5 . A wafer cleaning device according to  claim 4 , wherein: 
 control means that adjusts said adjustment means based upon the result of detection by said displacement detecting means is provided.    
     
     
         6 . A wafer cleaning device according to  claim 1  or  4 , wherein: 
 parallelism between the facing surface parallel to said axis of said rolled contact surface and the cleaned surface of said wafer is set to 0.1 mm or less.  
 
     
     
         7 . A wafer cleaning method, comprising: 
 a process for touching the rolled contact surface of a roll brush one end in an axial direction of which is supported so that the roll brush can be rolled around said axis freely to the cleaned surface of a wafer; and    a process for rolling said roll brush, wherein: 
 one end of said roll brush is supported so that the roll brush can be displaced by adjustment means to enable the axis of said roll brush to be tilted to the cleaned surface of said wafer.  
   
     
     
         8 . A wafer cleaning method according to  claim 7 , wherein: 
 said adjustment means is a dial adjusting screw.    
     
     
         9 . A wafer cleaning method according to  claim 7 , comprising: 
 a displacement detecting process for detecting the change of distance between the cleaned surface of said water and said roll brush.    
     
     
         10 . A wafer cleaning method according to  claim 9 , comprising: 
 a control process for adjusting said adjustment means based upon the result of detection in said displacement detecting process.    
     
     
         11 . A wafer cleaning method according to  claim 7  or  9 , wherein: 
 parallelism between the facing surface parallel to said axis of said rolled contact surface and the cleaned surface of said wafer is set to 0.1 mm or less.  
 
     
     
         12 . A chemical mechanical polishing machine, comprising: 
 a polishing module; and    a cleaning module, wherein: 
 said cleaning module is provided with a roll brush one end in an axial direction of which is supported so that the roll brush can be rolled around said axis freely; and  
 one end of said roll brush is supported so that the roll brush can be displaced by adjustment means to enable the axis of said roll brush to be tilted to the cleaned surface of said wafer.  
   
     
     
         13 . A chemical mechanical polishing machine, comprising: 
 a polishing module; and    a cleaning module, wherein: 
 said polishing module is provided with a roll brush one end in an axial direction of which is supported so that the roll brush can be rolled around said axis freely and a driven roll which is located on the side reverse to said roll brush with a wafer between them and one end in an axial direction of which is supported so that the roll brush can be rolled around said axis freely; and  
 one end of said roll brush and/or said driven roll is supported so that the roll brush can be displaced by adjustment means to enable the axis of said roll brush and/or said driven roll to be tilted to the cleaned surface of said wafer.  
   
     
     
         14 . A chemical mechanical polishing machine according to  claim 12  or  13 , wherein: 
 said adjustment means is a dial adjusting screw.  
 
     
     
         15 . A chemical mechanical polishing machine according to  claim 12 , wherein: 
 displacement detecting means for detecting the change of distance between the cleaned surface of said wafer and said roll brush is provided.    
     
     
         16 . A chemical mechanical polishing machine according to  claim 15 , wherein: 
 control means for adjusting said adjusting means based upon the result of detection by said displacement detecting means is provided.    
     
     
         17 . A chemical mechanical polishing machine according to  claim 12  or  15 , wherein: 
 parallelism between the facing surface parallel to said axis of said rolled contact surface and the cleaned surface of said wafer is set to 0.1 mm or less.