US2003127722A1PendingUtilityA1

Semiconductor device and method for fabricating the same

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Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO LTDPriority: Dec 26, 2000Filed: Feb 24, 2003Published: Jul 10, 2003
Est. expiryDec 26, 2020(expired)· nominal 20-yr term from priority
Inventors:Yukiko NakaokaKazuhiko MatsumuraHideyuki KanekoKoichi Nagao
Y10S438/978Y10S438/959H10W 90/756H10W 90/754H10W 90/736H10W 90/732H10W 90/722H10W 90/291H10W 74/142H10W 74/00H10W 72/07338H10W 72/07331H10W 72/07236H10W 72/07232H10W 72/5524H10W 72/5522H10W 72/952H10W 72/951H10W 72/923H10W 72/884H10W 72/859H10W 72/856H10W 72/387H10W 72/354H10W 72/352H10W 72/325H10W 72/252H10W 72/241H10W 72/075H10W 72/074H10W 72/073H10W 72/072H10W 72/30H10W 72/00H10W 90/00H10W 74/129H10W 74/111H10W 74/15H10W 74/012H10W 72/0198H10W 74/014H10D 62/117
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Claims

Abstract

In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a first semiconductor chip having a first electrode disposed on an upper surface thereof;    a second semiconductor chip having a second electrode disposed on an upper surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the second electrode being electrically connected to the first electrode; and    a resin layer interposed between the first and second semiconductor chips to cover an entire side surface of the second semiconductor chip.    
     
     
         2 . The semiconductor device of  claim 1 , wherein a portion of the resin layer interposed between the first and second semiconductor chips and a portion of the resin layer covering the entire side surface of the second semiconductor chip are composed of different resin materials.  
     
     
         3 . The semiconductor device of  claim 2 , wherein a quantity of fillers contained in the portion of the resin layer covering the entire side surface of the second semiconductor chip is larger than a quantity of fillers contained in the portion of the resin layer interposed between the first and second semiconductor chips.  
     
     
         4 . The semiconductor device of  claim 2 , wherein an average diameter of fillers contained in the portion of the resin layer covering the entire side surface of the second semiconductor chip is larger than an average diameter of fillers contained in the portion of the resin layer interposed between the first and second semiconductor chips.  
     
     
         5 . The semiconductor device of  claim 1 , wherein an upper surface of the resin covering the entire side surface of the second semiconductor chip is positioned to have a plan surface substantially common to a lower surface of the second semiconductor chip.  
     
     
         6 . The semiconductor device of  claim 5 , wherein the first and second semiconductor chips are sealed with a resin.

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