Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a semiconductor substrate;    source/drain regions formed in the semiconductor substrate;    a gate insulation film formed on the semiconductor substrate;    a gate electrode formed on the gate insulation film between the source/drain regions; and    a gate sidewall spacer formed on side surfaces of the gate electrode,    wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein the gate electrode has a gate length of 0.2 μm or less.  
     
     
         3 . The semiconductor device according to  claim 1 , wherein each of the source/drain regions has an elevated source/drain structure.  
     
     
         4 . The semiconductor device according to  claim 1 , wherein a metal silicide layer is formed on an upper surface of the gate electrode and each of the source/drain regions.  
     
     
         5 . A semiconductor device comprising: 
 a semiconductor substrate;    source/drain regions formed in the semiconductor substrate;    a gate insulation film formed on the semiconductor substrate;    a gate electrode formed on the gate insulation film between the source/drain regions and covered with a gate protecting insulation film; and    a gate sidewall spacer formed on side surfaces of the gate electrode,    wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.    
     
     
         6 . The semiconductor device according to  claim 5 , wherein the gate protecting insulation film is composed of silicon oxide containing 0.1-30 atomic % of chlorine.  
     
     
         7 . The semiconductor device according to  claim 5 , wherein the gate electrode has a gate length of 0.2 μm or less.  
     
     
         8 . The semiconductor device according to  claim 5 , wherein each of the source/drain regions has an elevated source/drain structure.  
     
     
         9 . The semiconductor device according to  claim 5 , wherein a metal silicide layer is formed on an upper surface of the gate electrode and each of the source/drain regions.  
     
     
         10 . A method for manufacturing a semiconductor device, comprising: 
 forming source/drain regions in a semiconductor substrate;    forming a gate insulation film on the semiconductor substrate;    forming a gate electrode on the gate insulation film between the source/drain regions;    forming an insulation film composed of a silicon nitride film containing chlorine on side surfaces of the gate electrode; and    converting the silicon nitride film by oxidation reaction processing into silicon oxide film containing 0.1-30 atomic % of chlorine to provide a gate sidewall spacer.    
     
     
         11 . The method according to  claim 10 , wherein the conversion into the silicon oxide is accomplished by oxidizing reaction using water vapor as a main oxidation agent.  
     
     
         12 . The method according to  claim 10 , wherein the conversion into the silicon oxide is accomplished by oxidizing reaction under a pressure in excess of the atmospheric pressure.