Method of manufacturing full-color organic electro-luminescent device

Abstract

A method of manufacturing a full-color organic electro-luminescent device on an indium-tin-oxide glass substrate. A pattern is formed on the indium-tin-oxide glass substrate by the photolithography and the etching process. The indium-tin-oxide glass substrate is cleaned. An insulation pad is formed over the indium-tin-oxide glass substrate. A low shadow mask and a high shadow mask are sequentially formed over the insulation pad by conducting dry film photo-resist processes. A hole-transport layer is formed over the indium-tin-oxide glass substrate by conducting a vapor-depositing process. Three vapor-depositing processes are simultaneously conducted to form red, green and blue light-emitting layers on the hole-transport layer using the low shadow mask and the high shadow mask as a barrier. An electron-transport layer and a metal layer are serially formed over the light-emitting layers by conducting vapor-depositing processes.

What is claimed is:  
     
         1 . A method of manufacturing a full-color organic electro-luminescent device, comprising the steps of: 
 patterning an indium-tin-oxide glass substrate;    cleaning the indium-tin-oxide glass substrate;    forming an insulation pad over the indium-tin-oxide glass substrate;    forming a low shadow mask over the insulation pad by the first dry film photo-resist process;    forming a high shadow mask over the insulation pad by conducting the second dry film photo-resist process;    forming a hole-transport layer over the indium-tin-oxide glass substrate by conducting a vapor-depositing process;    conducting three vapor-depositing processes simultaneously to form the red, the green and the blue light-emitting materials on the hole-transport layer in the same step using the low shadow mask and the high shadow mask as a barrier;    forming an electron-transport layer over the red, the green and the blue light-emitting materials by conducting a vapor-depositing process; and    forming a metal layer over the electron-transport material by conducting a vapor-depositing process.    
     
     
         2 . The method of  claim 1 , wherein material forming the insulation pad is selected from the group consisting of silicon nitride and silicon oxide.  
     
     
         3 . The method of  claim 1 , wherein the low shadow mask has a thickness between 1 μm to 10 μm.  
     
     
         4 . The method of  claim 1 , wherein the high shadow mask has a thickness between 5 μm to 100 μm.  
     
     
         5 . The method of  claim 1 , wherein material forming the hole-transport layer includes N,N′-diphenyl-N,N′-(m-tolyl) benzidine.  
     
     
         6 . The method of  claim 1 , wherein the hole-transport layer has a thickness between 40 nm to 80 nm.  
     
     
         7 . The method of  claim 1 , wherein the blue vapor-depositing material used in the simultaneous vapor-depositing process includes perylene.  
     
     
         8 . The method of  claim 1 , wherein the thickness of the red, the green and the blue light-emitting materials is between 15 nm to 30 nm.  
     
     
         9 . The method of  claim 1 , wherein the step of performing a simultaneous vapor-depositing process includes providing a blue-light-emitting-material evaporation source, a red-light-emitting-material evaporation source and a green-light-emitting-material evaporation source.  
     
     
         10 . The method of  claim 1 , wherein material forming the red sub-pixels includes nile red and material forming the green sub-pixels includes quinacridone.  
     
     
         11 . The method of  claim 9 , wherein the evaporation sources for the red and the green sub-pixels are positioned on each side of the blue material evaporation source.  
     
     
         12 . The method of  claim 9 , wherein the step of forming the blue sub-pixels includes aiming a beam of blue material from the blue evaporation source front at the surface of the indium-tin-oxide glass substrate in a vapor-depositing process.  
     
     
         13 . The method of  claim 9 , wherein the step of forming the red sub-pixels and the green sub-pixels includes aiming a beam of red material from the red evaporation source and a beam of green material from the green evaporation source simultaneously at the indium-tin-oxide glass substrate surface both tilted at an identical angle from the vertical but on opposite side.  
     
     
         14 . The method of  claim 11 , wherein the angle of tilt from the vertical is between 45° to 80°.  
     
     
         15 . The method of  claim 11 , wherein the red and the green light-emitting materials in the blue light-emitting material are controlled at a percentage between 0.5% to 5% by volume ratio.  
     
     
         16 . The method of  claim 1 , wherein material forming the electron-transport layer includes tris-(8-hydroxyquinoline) aluminum.  
     
     
         17 . The method of  claim 1 , wherein the electron-transport layer has a thickness between 40 nm to 80 nm.  
     
     
         18 . The method of  claim 1 , wherein the evaporation source for depositing metal layer is set at an angle of tilt from a vertical to the indium-tin-oxide glass substrate surface.  
     
     
         19 . The method of  claim 18 , wherein the angle of tilt is between 5° to 60°.  
     
     
         20 . The method of  claim 1 , wherein material forming the metal layer is selected from the group consisting of calcium, magnesium, lithium, aluminum and silver.  
     
     
         21 . The method of  claim 1 , wherein the metal layers include a layer of magnesium and a layer of silver.  
     
     
         22 . The method of  claim 21 , wherein the magnesium layer has a thickness between 30 nm to 70 nm.  
     
     
         23 . The method of  claim 21 , wherein the silver layer has a thickness between 200 nm to 350 nm.  
     
     
         24 . The method of  claim 1 , wherein the metal layer is a negative electrode.  
     
     
         25 . The method of  claim 1 , wherein the indium-tin-oxide glass substrate is a positive electrode.  
     
     
         26 . The method of  claim 1 , wherein the insulation pad has a thickness between 5 μm to 200 μm.  
     
     
         27 . A processing station for manufacturing a full-color organic electro-luminescent device, comprising: 
 a plurality of evaporation source packs with each evaporation source pack having at least one evaporation source, wherein each evaporation source pack can be used for vapor-depositing various types of materials;    a plurality of cassettes with each cassette capable of holding one indium-tin-oxide glass substrate; and    a conveyer belt for moving the cassettes that hold indium-tin-oxide glass substrate continuously in such a way that each cassette passes in front of each evaporation source pack sequentially to carry out the required vapor-depositing processes.