Copper interconnection and the method for fabricating the same

Abstract

A copper interconnection where holes in the vicinity of an interface are reduced to lower contribution of interface diffusion to Cu the EM, increase a lifetime, and simultaneously increase adhesiveness and resistance to stress migration is constituted in a manner that impurities 15 form a solid solution in the vicinity of an interface between a Cu layer 16 and a barrier metal layer 12 , the impurities are precipitated, and an amorphous Cu layer 14 is fabricated, or a compound with Cu is fabricated. The copper interconnection is also constituted in a manner that impurities 15 form a solid solution in the vicinity of an interface between the Cu layer 16 and a cap layer 19 , the impurities 15 are precipitated, and an amorphous Cu layer 14 is fabricated, or a compound with Cu is fabricated.

What is claimed is:  
     
         1 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer; and    hole reduction impurities added to said Cu precipitated in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         2 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer; and    hole reduction impurities added to said Cu to fabricate a solid solution with said Cu in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         3 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer; and    a hole reduction amorphous layer present in a first interface, in which said Cu is made amorphous, in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         4 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer; and    a hole reduction compound layer present in a first interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         5 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;    an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer; and    hole reduction impurities added to said Cu precipitated in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         6 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;    an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer; and    hole reduction impurities added to said Cu to fabricate a solid solution with said Cu in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         7 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;    an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer; and    a hole reduction amorphous layer present in a second interface, in which said Cu is made amorphous, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         8 . A copper interconnection comprising: 
 a barrier metal layer fabricated on an interconnection groove;    a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer;    an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer; and    a hole reduction compound layer present in a second interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         9 . The copper interconnection according to  claim 1 , wherein said hole reduction impurities added to said Cu is one selected from Nb, Ta, Si, Ru, and V.  
     
     
         10 . The copper interconnection according to  claim 5 , wherein said hole reduction impurities added to said Cu is one selected from Nb, Ta, Si, Ru, and V.  
     
     
         11 . A method for manufacturing a copper interconnection, comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said barrier metal sputtering step, and executing heat treatment;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(A);    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step; and,    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         12 . The method for manufacturing a copper interconnection, according to  claim 11 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         13 . The method for manufacturing a copper interconnection, according to  claim 11 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, making said hole reduction impurities a Cu amorphous in said vicinity of said first interface.  
     
     
         14 . The method for manufacturing a copper interconnection, according to  claim 11 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         15 . A method for manufacturing a copper interconnection, comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a hole reduction impurity fabricating step(B) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said sputtering step, and diffusing said impurities by heat;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(B);    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step; and,    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         16 . The method for manufacturing a copper interconnection, according to  claim 15 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         17 . The method for manufacturing a copper interconnection, according to  claim 15 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         18 . A method for manufacturing a copper interconnection, comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said seed Cu sputtering step, and executing heat treatment;    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said hole reduction impurity fabricating step(A); and,    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         19 . The method for manufacturing a copper interconnection, according to  claim 18 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         20 . The method for manufacturing a copper interconnection, according to  claim 18 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, making said hole reduction impurities a Cu amorphous in said vicinity of said first interface.  
     
     
         21 . The method for manufacturing a copper interconnection, according to  claim 18 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         22 . A method for manufacturing a copper interconnection, comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;    a hole reduction impurity fabricating step(C) of ion-implanting hole reduction impurities in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;    a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;    an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step; and,    thereby making said hole reduction impurities precipitate in said vicinity of said second interface.    
     
     
         23 . The method for manufacturing a copper interconnection, according to  claim 22 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said second interface.  
     
     
         24 . The method for manufacturing a copper interconnection, according to  claim 22 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, making said hole reduction impurities a Cu amorphous in said vicinity of said second interface.  
     
     
         25 . The method for manufacturing a copper interconnection, according to  claim 22 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a Cu compound with said Cu in said vicinity of said second interface.  
     
     
         26 . A method for manufacturing a copper interconnection, comprising: 
 a barrier metal sputtering step of sputtering barrier metal ion an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;    a hole reduction impurity fabricating step(D) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;    a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;    an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step; and    thereby making said hole reduction impurities precipitate in said vicinity of said second interface.    
     
     
         27 . The method for manufacturing a copper interconnection, according to  claim 26 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a Cu compound with said Cu in said vicinity of said second interface.  
     
     
         28 . The method for manufacturing a copper interconnection, according to  claim 26 , wherein in place of said hole reduction impurity depositing step, a Cu compound fabricating step of fabricating a compound with said Cu in said vicinity of said second interface is executed.  
     
     
         29 . The method for manufacturing a copper interconnection, according to  claim 22 , wherein said natural oxide layer removing step is executed after said Cu interconnection fabricating step, and then said hole reduction impurity fabricating step(C) is executed.  
     
     
         30 . The method for manufacturing a copper interconnection, according to  claim 26 , wherein said natural oxide layer removing step is executed after said Cu interconnection fabricating step, and then said hole reduction impurity fabricating step(D) is executed.  
     
     
         31 . The method for manufacturing a copper interconnection, according to  claim 11 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         32 . The method for manufacturing a copper interconnection, according to  claim 15 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         33 . The method for manufacturing a copper interconnection, according to  claim 18 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         34 . The method for manufacturing a copper interconnection, according to  claim 22 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         35 . The method for manufacturing a copper interconnection, according to  claim 26 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         36 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in a group of interconnections of said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, and hole reduction impurities added to said Cu precipitated in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         37 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in a group of interconnections of said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, and hole reduction impurities added to said Cu to fabricate a solid solution in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         38 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in a group of interconnections of said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, and a Cu hole reduction amorphous layer present in a first interface in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         39 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in a group of interconnections of said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, and a hole reduction compound layer present in a first interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said first interface between said Cu or Cu alloy layer and said barrier metal layer.    
     
     
         40 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer, and hole reduction impurities added to said Cu precipitated in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         41 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer, and hole reduction impurities added to said Cu to fabricate a solid solution in a second interface in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         42 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer, and a hole reduction amorphous layer present in a second interface, in which said Cu is made amorphous, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         43 . A copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, comprising: 
 at least one or more copper interconnections included in said lower interconnection layer, said upper interconnection layer or said via hole,    wherein said copper interconnection is provided with a barrier metal layer fabricated on an interconnection groove, a Cu or Cu alloy layer for an interconnection fabricated on said barrier metal layer, an insulating cap layer fabricated on said Cu or Cu alloy layer to protect and insulate said Cu or Cu alloy layer, and a hole reduction compound layer present in a second interface, in which a compound with said Cu is fabricated, in order to reduce holes fabricated in said second interface between said Cu or Cu alloy layer and said insulating cap layer.    
     
     
         44 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 36 , wherein said hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         45 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 36 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         46 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 37 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         47 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 38 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         48 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 39 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         49 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 40 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         50 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 41 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         51 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 42 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         52 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 43 , wherein said multi-layer interconnection structure is a single damascene.  
     
     
         53 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 36 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         54 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 37 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         55 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 38 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         56 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 39 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         57 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 40 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         58 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 41 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         59 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 42 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         60 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 43 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in a via first process for fabricating an interconnection groove after opening of a via.  
     
     
         61 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 36 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         62 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 37 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         63 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 38 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         64 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 39 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         65 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 40 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         66 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 41 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         67 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 42 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         68 . The copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 43 , wherein said dual damascene is fabricated in a trench first process for opening a via after fabrication of an interconnection groove.  
     
     
         69 . A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or , Cu alloy layer for an interconnection and said barrier metal layer after said barrier metal sputtering step, and executing heat treatment;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(A);    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step; and,    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         70 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 69 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         71 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 69 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, making said hole reduction impurities a Cu amorphous in said vicinity of said first interface.  
     
     
         72 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper wire, according to  claim 69 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         73 . A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a hole reduction impurity fabricating step(B) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said sputtering step, and diffusing said impurities by heat;    a hole reduction impurity fabricating step of implanting ions in said barrier metal to execute heat treatment;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said hole reduction impurity fabricating step(B);    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said seed Cu sputtering step; and    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         74 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 73 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         75 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 73 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         76 . A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a hole reduction impurity fabricating step(A) of ion-implanting hole reduction impurities in said barrier metal in order to reduce holes fabricated in a first interface between a Cu or Cu alloy layer for an interconnection and said barrier metal layer after said seed Cu sputtering step, and executing heat treatment;    a Cu depositing step of depositing Cu which makes an interconnection on said seed Cu after said hole reduction impurity fabricating step(A); and    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         77 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 76 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said first interface.  
     
     
         78 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 76 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, making said hole reduction impurities a Cu amorphous in said vicinity of said first interface.  
     
     
         79 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 76 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said first interface, fabricating a Cu compound with said Cu in said vicinity of said first interface.  
     
     
         80 . A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;    a hole reduction impurity fabricating step(C) of ion-implanting hole reduction impurities in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;    a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;    an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step; and    thereby making said hole reduction impurities precipitate in said vicinity of said first interface.    
     
     
         81 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 80 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said second interface.  
     
     
         82 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 80 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, making said hole reduction impurities a Cu amorphous in said vicinity of said second interface.  
     
     
         83 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 80 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a Cu compound with said Cu in said vicinity of said second interface.  
     
     
         84 . A method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on the lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in a manufacturing process of said copper interconnection, said process comprising: 
 a barrier metal sputtering step of sputtering barrier metal on an interconnection groove;    a seed Cu sputtering step of sputtering seed Cu which becomes a seed after said barrier metal sputtering step;    a Cu interconnection fabricating step of embedding a Cu or Cu alloy layer in said interconnection groove after said seed Cu sputtering step, and fabricating an interconnection by using CMP method;    a hole reduction impurity fabricating step(D) of depositing hole reduction impurities by a solid phase in order to reduce holes fabricated in a second interface between said Cu or Cu alloy layer and an insulating cap layer fabricated on said Cu or Cu alloy layer to insulate and protect said Cu or Cu alloy layer after said Cu interconnection fabricating step, and executing heat treatment;    a natural oxide layer removing step of removing a natural oxide layer of said Cu by executing treatment such as cleaning and/or plasma irradiation on a surface of said interconnection after said second hole reduction impurity fabricating step;    an insulating cap layer sputtering deposition step of depositing said insulating cap layer by sputtering after said natural oxide layer removing step; and,    thereby making said hole reduction impurities precipitate in said vicinity of said second interface.    
     
     
         85 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 84 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a solid solution of said hole reduction impurities with said Cu in said vicinity of said second interface.  
     
     
         86 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to claim  84 , wherein in place of making said hole reduction impurities precipitate in said vicinity of said second interface, fabricating a Cu compound with said Cu in said vicinity of said second interface.  
     
     
         87 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 80 , wherein said natural oxide layer removing step is executed after said Cu interconnection fabricating step, and then said second hole reduction impurity fabricating step is executed.  
     
     
         88 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to claim  84 , wherein said natural oxide layer removing step is executed after said Cu interconnection fabricating step, and then said third hole reduction impurity fabricating step is executed.  
     
     
         89 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, at least one or more of said lower interconnection layer, said upper interconnection layer, and said via hole being fabricated in said manufacturing process of said copper interconnection, according to  claim 69 , wherein the hole reduction impurities are one selected from Nb, Ta, Si, Ru, and V.  
     
     
         90 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 69 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         91 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 70 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         92 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 71 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         93 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 72 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         94 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 73 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         95 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 74 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         96 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 75 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         97 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 76 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         98 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 77 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         99 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 78 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         100 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 79 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         101 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 80 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         102 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 81 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         103 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 82 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         104 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 83 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         105 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 84 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         106 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 85 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         107 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 86 , wherein said multi-layers interconnection structure is a single damascene.  
     
     
         108 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 69 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         109 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 70 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         110 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 71 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         111 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 72 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         112 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 73 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         113 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 74 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         114 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 75 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         115 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 76 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         116 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 77 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         117 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 78 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         118 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 79 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         119 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 80 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         120 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 81 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         121 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 82 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         122 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 83 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         123 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 84 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         124 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 85 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.  
     
     
         125 . The method for manufacturing a copper interconnection with multi-layers having a lower interconnection layer of one layer, an upper interconnection layer positioned on said lower interconnection layer to be different from said one layer, and a via hole for interconnecting said lower and upper wring layers, according to  claim 86 , wherein said multi-layer interconnection structure is a dual damascene, and said dual damascene is fabricated in at least one of a via first process for fabricating said interconnection groove after opening of said via, a trench first process for opening said via after fabrication of said interconnection groove.