Method of manufacturing semiconductor substrate, semiconductor substrate, electro-optical apparatus and electronic equipment

Abstract

A method of manufacturing a semiconductor substrate includes the processes of: forming an insulation film on a surface of a semiconductor substrate main body; forming an ion shield member having a predetermined shape on the insulation film; implanting an ion into the semiconductor substrate main body from a side on which the insulation film is formed, to thereby form an ion implantation layer; removing the ion shield member; laminating the insulation film and a support substrate onto each other; and separating the semiconductor substrate main body from the support substrate at a portion of the ion implantation layer.

What is claimed is:  
     
         1 . A semiconductor substrate comprising: 
 a support substrate;    an insulation film laminated on a surface of said support substrate; and    a semiconductor layer formed on said insulation film, said semiconductor layer having such a structure that thicknesses of said semiconductor layer are different in a layer thereof.    
     
     
         2 . A semiconductor substrate according to  claim 1 , wherein said semiconductor layer comprises a single crystal semiconductor layer.  
     
     
         3 . An electro-optical apparatus comprising: 
 a pair of a support substrate and an opposite substrate sandwiching electro-optical substance therebetween;    a plurality of first switching elements arranged in a form of matrix in correspondence with a pixel array, in an image display region of said support substrate; and    a plurality of second switching elements arranged in a peripheral region, which is located around said image display region, of said support substrate and at least partially constituting a peripheral circuit,    wherein a thickness of a semiconductor layer in the image display region constituting said first switching elements is thinner than a semiconductor layer in the peripheral region constituting said second switching elements.    
     
     
         4 . An electro-optical apparatus according to  claim 3 , wherein said semiconductor layer comprises a single crystal semiconductor layer.  
     
     
         5 . An electro-optical apparatus according to  claim 3 , wherein said peripheral circuit is a drive circuit.  
     
     
         6 . An electronic equipment comprising a light source for emitting light, an electro-optical device for modulating the emitted light in correspondence with image information and a projecting device for projecting the modulated light,  
       said electro-optical apparatus comprising: 
 a pair of a support substrate and an opposite substrate sandwiching electro-optical substance therebetween;  
 a plurality of first switching elements arranged in a form of matrix in correspondence with a pixel array, in an image display region of said support substrate; and  
 a plurality of second switching elements arranged in a peripheral region, which is located around said image display region, of said support substrate and at least partially constituting a peripheral circuit,  
 wherein a thickness of a semiconductor layer in the image display region constituting said first switching elements is thinner than a semiconductor layer in the peripheral region constituting said second switching elements.  
 
     
     
         7 . An electronic equipment according to  claim 6 , wherein said semiconductor layer comprises a single crystal semiconductor layer.