Semiconductor device with vertical electron injection and method for making same

Abstract

The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate ( 2 ), a structure comprising at least one monocrystalline thin film ( 7 ) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate ( 2 ) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means ( 13, 14 ) enabling vertical electron injection into the electronic component.

1 . Semiconductor device with vertical electron injection comprising a support substrate ( 2 ,  21 ,  51 ), a structure comprising at least one monocrystalline thin film ( 7 ,  23 ,  53 ) transferred onto the support substrate and integral with the support substrate, at least one electronic component ( 25 ,  541   55 ), the support substrate comprising at least one recess ( 11 ,  24 ,  56 ) enabling electric or electronic access to the electronic component through the monocrystalline thin film, the device also comprising means enabling vertical electron injection into the vertical component.  
     
     
         2 . Device according to  claim 1 , characterised in that the structure comprises at least one active layer ( 10 ) formed by crystal growth of the semiconducting material on the monocrystalline thin film ( 7 ,  23 ,  53 ), the electronic component ( 25 ,  54 ,  55 ) being produced in said active layer ( 10 ).  
     
     
         3 . Device according to  claim 1 , characterised in that the monocrystalline thin film is an active layer from which the electronic component is produced.  
     
     
         4 . Device according to any one of  claims 1  to  3 , characterised in that it furthermore comprises a layer ( 6 ,  22 ,  52 ), called adhesion layer, situated between the support substrate ( 2 ,  21 ,  51 ) and the structure and enabling solidarisation of the monocrystalline thin film on the support, the adhesion layer enabling electric or electronic access to the electronic component.  
     
     
         5 . Device according to  claim 4 , characterised in that the adhesion layer ( 22 ) is insulating and comprises at least one recess enabling electric or electronic access to the electronic component ( 25 ).  
     
     
         6 . Device according to  claim 4 , characterised in that the adhesion layer is conducting or semiconducting.  
     
     
         7 . Device according to any one of  claims 1  to  6 , characterised in that the monocrystalline thin film comprises at least one recess enabling direct electric or electronic access to the electronic component.  
     
     
         8 . Device according to  claim 1 , characterised in that the support substrate ( 2 ,  21 ,  51 ) is in a material selected from the group consisting of silicon, SiC, AlN, sapphire and GaN.  
     
     
         9 . Device according to  claim 1 , characterised in that the monocrystalline thin film ( 7 ,  23 ,  53 ) is in a material selected from the group consisting of SiC, silicon, GaN, sapphire or ZnO.  
     
     
         10 . Device according to  claim 5 , characterised in that the adhesion layer ( 6 ,  22 ,  52 ) is in SiO 2 .  
     
     
         11 . Device according to  claim 2 , characterised in that the active layer ( 10 ) comprises a semiconducting material chosen among SiC, GaN, the compounds III-V and their derivatives, and diamond.  
     
     
         12 . Device according to any one of  claims 1  to  11 , characterised in that the electronic component comprises at least one junction produced from two semiconductors of the same nature or of different natures.  
     
     
         13 . Device according to any one of  claims 1  to  11 , characterised in that the electronic component comprises at least one junction of the metal-semiconductor type.  
     
     
         14 . Device according to any one of  claims 1  to  11 , characterised in that the electronic component comprises at least one stack of the semiconductor-metal-oxide type.  
     
     
         15 . Device according to any one of  claims 1  to  14 , characterised in that the means enabling vertical electron injection into the electronic component comprise an electrode ( 13 ) set on the electronic component and an electrode ( 14 ) set under the electronic component, in said recess enabling access to the electronic component.  
     
     
         16 . Device according to  claim 15 , characterised in that an earth ( 15 ) is provided in said recess, in contact with said electrode ( 14 ) set under the component in order to constitute a heat sink.  
     
     
         17 . Device according to any one of  claims 1  to  14 , characterised in that electron injection is carried out by means of an electron beam ( 30 ) directed onto the electronic component ( 25 ) passing in said recess ( 24 ), the means enabling vertical electron injection comprising a conducting coating ( 28 ) for guiding the electrons towards the electronic component ( 25 ).  
     
     
         18 . Device according to any one of  claims 1  to  17 , characterised in that the recess ( 56 ) of the support substrate ( 51 ) comprises cells ( 57 ,  58 ) enabling electric or electronic access to the electronic components ( 54 ,  55 ) produced from the structure.  
     
     
         19 . Device according to  claim 1 , characterised in that said electronic component is selected from the group consisting of light emitters, light detectors, power electronic components and diodes.  
     
     
         20 . Device according to any one of  claims 1  to  7 , characterised in that the structure is vacuum sealed.  
     
     
         21 . Device according  claim 20 , characterised in that the electronic component ( 25 ), being a component able to emit a light beam in response to a received electron beam ( 30 ), the monocrystalline thin film ( 23 ) is such that it allows passage of said electron beam.  
     
     
         22 . Device according to  claim 20 , characterised in that the structure forms a membrane deformable under the effect of a pressure difference, said electronic component being a component providing a signal indicative of the deformation undergone by the membrane.  
     
     
         23 . Manufacturing method for a semiconductor device with vertical electron injection according to  claim 1 , characterised in that it comprises the following stages: 
 transfer of the monocrystalline thin film ( 7 ) onto a first face of the support substrate ( 2 ),    production of at least one electronic component from the structure,    formation of at least one recess ( 11 ) from a second face of the substrate ( 2 ) to enable electric or electronic access to the electronic component through the monocrystalline thin film ( 7 ),    production of means ( 13 ,  14 ) allowing vertical electron injection into the electronic component.    
     
     
         24 . Method according to  claim 23 , characterised in that it furthermore comprises a stage of formation of at least one active layer ( 10 ) by crystal growth of semiconducting material on the monocrystalline thin film ( 7 ), the electronic component being produced in said active layer, the crystal growth being before or after transfer.  
     
     
         25 . Method according to  claim 23 , characterised in that the monocrystalline thin film is an active layer, the electronic component being produced from this monocrystalline thin film  
     
     
         26 . Method according to  claim 23 , characterised in that the transfer stage for the monocrystalline thin film ( 7 ) comprises the following operations: 
 definition of said monocrystalline thin film ( 7 ) in a substrate of monocrystalline material ( 1 ) by introducing gaseous species into this substrate of monocrystalline material in order to create a fracture zone ( 5 ), the monocrystalline thin film ( 7 ) being located between one face of the substrate in monocrystalline material ( 1 ) and the cleavage zone ( 5 ),    solidarisation of said monocrystalline thin film on the first face of the support substrate ( 2 ),    fracture separation of the monocrystalline thin film ( 7 ) from the rest ( 9 ) of the substrate ( 1 ) of monocrystalline material, the separation being produced before or after the solidarisation operation.    
     
     
         27 . Method according to any one of  claims 23  to  26 , characterised in that the transfer of said monocrystalline thin film is carried out through the intermediary of an adhesion layer ( 6 ).  
     
     
         28 . Method according to  claim 26 , characterised in that the solidarisation of said thin film is obtained by molecular adhesion.  
     
     
         29 . Method according to any one of  claims 23  to  28 , characterised in that the transfer stage of the monocrystalline thin film ( 7 ) is formed on a first face of a support substrate in silicon ( 2 ).  
     
     
         30 . Method according to any one of  claims 23  to  28 , characterised in that the transfer stage consists of transferring a thin film of monocrystalline SiC ( 7 ).  
     
     
         31 . Method according to  claim 27 , characterised in that the transfer of said monocrystalline thin film ( 7 ) is carried out with the intermediary of an adhesion layer ( 6 ) in SiO 2 .  
     
     
         32 . Method according to  claim 24 , characterised in that the active layer ( 10 ) is formed by crystal growth on a layer of semiconducting material selected from the group consisting of SiC, GaN, the compounds III-V and their derivatives, and diamond.  
     
     
         33 . Method according to any one of  claims 23  to  32 , characterised in that the production of means allowing vertical electron injection into the electronic component comprises the deposit of an electrode ( 13 ) on the electronic component and the deposit of an electrode ( 14 ) under the electronic component, in said recess ( 11 ) enabling access to the electronic component.  
     
     
         34 . Method according to  claim 33 , characterised in that it comprises deposit of an earth ( 15 ) in said recess ( 11 ), in contact with said electrode ( 14 ) set under the component in order to constitute a heat sink.  
     
     
         35 . Method according to any one of  claims 23  to  32 , characterised in that it comprises the deposit of a conducting coating ( 28 ) capable of guiding an electron beam ( 30 ) directed onto the electronic component ( 25 ) passing in said recess ( 24 ).  
     
     
         36 . Method according to any one of  claims 23  to  32 , characterised in that it also comprises the formation of cells ( 57 ,  58 ) prolonging the recess ( 56 ) of the support substrate ( 51 ) to allow electric or electronic access to the electronic components ( 54 ,  55 ) formed from the structure.  
     
     
         37 . Method according to any one of  claims 23  to  32 , characterised in that the formation stage of at least one electronic component consists of producing a component selected from the group consisting of light emitters, light detectors, power electronic components and diodes.  
     
     
         38 . Method according to any one of  claims 23  to  32 , characterised in that the transfer stage of a monocrystalline thin film ( 23 ) consists of transferring a monocrystalline thin film such that the structure is vacuum sealed.  
     
     
         39 . Method according to  claim 38 , characterised in that the stage for transferring a monocrystalline thin film ( 23 ) consists of transferring a monocrystalline thin film able to be crossed by an electron beam.  
     
     
         40 . Method according to  claim 38 , characterised in that the stage for transferring a monocrystalline thin film consists of transferring a monocrystalline thin film such that the structure forms a membrane deformable under the effect of a difference of pressure, the stage of forming at least one electronic component comprising the production of a component providing a signal indicative of the deformation undergone by the membrane.