US2003111616A1PendingUtilityA1

Workpiece holder, semiconductor fabricating apparatus, semiconductor inspecting apparatus, circuit pattern inspecting apparatus, charged particle beam application apparatus, calibrating substrate, workpiece holding method, circuit pattern inspecting method, and charged particle beam application method

Assignee: HITACHI LTDPriority: Apr 20, 1998Filed: Dec 4, 2002Published: Jun 19, 2003
Est. expiryApr 20, 2018(expired)· nominal 20-yr term from priority
H01J 2237/082H01J 2237/2826H01J 37/28
44
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Claims

Abstract

A semiconductor fabricating apparatus for fabricating a semiconductor wafer includes a processing chamber, in which a workpiece is processed by irradiating the surface of said workpiece with an electron beam, a workpiece holder including a positioning portion for positioning the workpiece. The surface height of an end portion of the workpiece is nearly equal to the height of the positioning portion when the workpiece carried in the processing chamber is held on the workpiece holder.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor fabricating apparatus for fabricating a semiconductor wafer, comprising: 
 a processing chamber in which a workpiece is processed by irradiating the surface of said workpiece with an electron beam; and    a workpiece holder including a positioning portion for positioning said workpiece;    wherein the surface height of an end portion of said workpiece is nearly equal to the height of said positioning portion when said workpiece carried in said processing chamber is held on said workpiece holder.    
     
     
         2 . A semiconductor fabricating apparatus according to  claim 1 , wherein a difference in height between the surface height of the end portion of said workpiece and said positioning portion is in a range of 200 μm or less.  
     
     
         3 . A semiconductor fabricating apparatus according to  claim 1 , wherein a gap between the end portion of said workpiece and said positioning portion is in a range of 0.5 mm or less.  
     
     
         4 . A semiconductor fabricating apparatus according to  claim 1 , wherein the surface height of a portion of said workpiece in a region having an outer limit positioned at least 10 mm or more inwardly from the end portion of said workpiece is nearly equal to the height of said positioning portion.

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