US2003111179A1PendingUtilityA1

Etcher for semiconductor manufacturing

38
Assignee: WINBOND ELECTRONICS CORPPriority: Dec 14, 2001Filed: Feb 22, 2002Published: Jun 19, 2003
Est. expiryDec 14, 2021(expired)· nominal 20-yr term from priority
Inventors:Mon-Long FangSung-Hui HuangJeng-Yin LinTing-Wang ChouChi-How Hsu
H01J 37/3244
38
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Claims

Abstract

The present invention provides an etcher for semiconductor manufacturing. The etcher comprises a chamber for accepting a wafer, having an inlet and outlet through which a gas is pumped into and out of the chamber, first and second electrodes generating an electrical field to ionize the gas for reacting with the wafer, and a plate disposed between the inlet and outlet, deflecting the gas flow therebetween.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . An etcher for semiconductor manufacturing comprising: 
 a chamber for accepting a wafer, having an inlet and outlet through which a gas is pumped into and out of the chamber respectively;    a first and second electrodes generating an electrical field to ionize the gas for reacting with the wafer; and    a plate disposed between the inlet and outlet, deflecting the gas flow therebetween.    
     
     
         2 . The etcher as claimed in  claim 1  wherein the chamber is a cylindrical chamber.  
     
     
         3 . The etcher as claimed in  claim 1  wherein the chamber further accepts a boat on which the wafer is disposed.  
     
     
         4 . The etcher as claimed in  claim 1  wherein the gas is a combination of oxygen and CF 4 .  
     
     
         5 . The etcher as claimed in  claim 1  wherein the plate is made of quartz.  
     
     
         6 . An etcher for semiconductor manufacturing comprising: 
 a chamber for accepting a wafer, having an inlet and outlet through which a gas is pumped into and out of the chamber respectively;    a first and second electrodes generating an electrical field to ionize the gas for reacting with the wafer; and    a plate disposed between the inlet and outlet, deflecting the gas flow therebetween, and having a plurality of holes through which the reacted gas flows to the outlet.    
     
     
         7 . The etcher as claimed in  claim 6  wherein the chamber is a cylindrical chamber.  
     
     
         8 . The etcher as claimed in  claim 6  wherein the chamber further accepts a boat on which the wafer is disposed.  
     
     
         9 . The etcher as claimed in  claim 6  wherein the gas is a combination of oxygen and CF 4 .  
     
     
         10 . The etcher as claimed in  claim 6  wherein the plate is made of quartz.

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