Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device has an interlayer insulation film formed on a first metal wiring and formed of an organic compound having a lower dielectric constant than that of SiO 2 , a second metal wiring formed on the interlayer insulation film, and an interlayer adhesion layer to improve adherence between the interlayer insulation film and the second metal wiring. The semiconductor device is provided with a stress buffer layer of which the elastic modulus is higher than that of the interlayer insulation film and is lower than that of the interlayer adhesion layer between the interlayer insulation film and the interlayer adhesion layer.

What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 a first metal wiring;    an interlayer insulation film formed on the metal wiring and formed of an organic compound having a lower dielectric constant than that of SiO 2 ;    a second metal wiring formed on said interlayer insulation film;    an interlayer adhesion layer formed to improve adherence between said interlayer insulation film and said second metal wiring; and    a stress buffer layer formed between said interlayer insulation film and said interlayer adhesion layer and having the elastic modulus higher than that of said interlayer insulation film and lower than that of said interlayer adhesion layer.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein said interlayer insulation film is formed of a bisbenzocyclobutene siloxane polymer, said interlayer adhesion layer is formed of SiN, and said stress buffer layer is formed of SiO 2 .  
     
     
         3 . A method of manufacturing a semiconductor device, comprising the steps of: 
 forming an interlayer adhesion layer on a first metal wiring;    forming a stress buffer layer of which the elastic modulus is lower than that of said interlayer adhesion layer on said interlayer adhesion layer;    forming an interlayer insulation film of which the elastic modulus is lower than that of said stress buffer layer and which is formed of an organic compound having a lower dielectric constant than that of SiO 2  on said stress buffer layer; and    forming a second metal wiring on said interlayer insulation film.    
     
     
         4 . A method of manufacturing a semiconductor device according to  claim 3 , wherein said stress buffer layer is formed of any one of thermal CVD method, plasma CVD method and optical CVD method.  
     
     
         5 . A method of manufacturing a semiconductor device according to  claim 3 , wherein said interlayer insulation film is bisbenzocyclobutene siloxane polymer film formed by sequentially performing spin coating, and sintering and hardening steps and said interlayer adhesion layer is SiN film formed by any one of thermal CVD method, plasma CVD method and optical CVD method, said stress buffer layer being SiO 2  film formed by any one of thermal CVD method, plasma CVD method and optical CVD method.