US2003108664A1PendingUtilityA1
Methods and compositions for the formation of recessed electrical features on a substrate
Priority: Oct 5, 2001Filed: Oct 4, 2002Published: Jun 12, 2003
Est. expiryOct 5, 2021(expired)· nominal 20-yr term from priority
Inventors:Toivo T. KodasMark J. Hampden-SmithKarel VanheusdenHugh DenhamAaron D. StumpAllen B. SchultPaolina AtanassovaKlaus Kunze
H10P 14/668H10P 14/46H05K 2201/09036H05K 3/125H05K 2203/125H05K 3/1258H05K 3/107H05K 1/0346H05K 2203/121H01C 17/06533H01C 17/06573H05K 2203/013H05K 3/4069C09D 11/30C23C 18/08H05K 3/4061H01C 17/06506H05K 1/097H05K 2203/1142H01B 1/026H05K 3/105H05K 1/162
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Claims
Abstract
Precursor compositions having a low conversion temperature and methods for the fabrication of recessed electrical features from the precursor compositions. The electrical features can be conductors, resistors and dielectric features. The precursor compositions are deposited into recessed features, such as trenches, formed in a substrate and are reacted at a low temperature to form electrical features having good electrical and mechanical properties. The substrate can be a low temperature substrate, such as an organic substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for the fabrication of a conductive electronic feature on a substrate, comprising the steps of:
(a) providing a substrate having a recessed feature; (b) depositing a silver metal precursor composition into at least a portion of said recessed feature; and (c) heating said conductor precursor composition to a temperature of not greater than about 400° C. to convert said conductor precursor composition to a conductive feature having a resistivity of not greater than 10 times the resistivity of the bulk metal.
2 . A method as recited in claim 1 , wherein said recessed feature has a depth of not greater than 10 μm and a minimum feature size of not greater than 50 μm.
3 . A method as recited in claim 1 , wherein said recessed feature has a depth of not greater than 100 μm and a minimum feature size of not greater than 50 μm.
4 . A method as recited in claim 1 , wherein said recessed features are vias.
5 . A method as recited in claim 1 , wherein said substrate is a polymer.
1 . A method as recited in claim 1 , wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, acetate, polyester, polyethylene, polypropylene, polyvinyl chloride and acrylonitrile, butadiene (ABS).
6 . A method as recited in claim 1 , wherein said substrate is a glass.
7 . A method as recited in claim 1 , wherein said conductor precursor composition comprises a silver metal carboxylate compound.
8 . A method as recited in claim 1 , wherein said conductor precursor composition comprises a molecular precursor compound and metallic particles.
9 . A method as recited in claim 1 , wherein said depositing step comprises applying said precursor composition over said substrate and using a doctor blade to force said precursor composition into said recessed feature.
10 . A method as recited in claim 1 , wherein said depositing step comprises applying said precursor composition into said recessed features using a syringe.
11 . A method as recited in claim 1 , wherein said depositing step comprises applying said precursor composition into said recessed features using an ink-jet device.
12 . A method as recited in claim 1 , wherein said depositing step comprises applying said precursor composition into said recessed features using an aerosol jet.
13 . A method as recited in claim 1 , further comprising the step of modifying the surface of said recessed feature to modify the surface energy of said recessed feature.
14 . A method as recited in claim 1 , wherein said precursor composition wets said recessed feature.
15 . A method as recited in claim 1 , wherein said heating step comprises heating to a temperature of not greater than about 300° C.
16 . A method as recited in claim 1 , wherein said heating step comprises heating to a temperature of not greater than about 200° C.
17 . A method as recited in claim 1 , wherein said heating step comprises heating to a temperature of not greater than about 150° C.
18 . A method as recited in claim 1 , wherein said conductive feature has a resistivity of not greater than about 6 times the resistivity of bulk silver.
19 . A method as recited in claim 1 , wherein said conductive feature on said substrate is patterned to form a printed circuit board.
20 . A method as recited in claim 1 , wherein said conductive feature on said substrate is patterned to form a high density interconnect.
21 . A method as recited in claim 1 , wherein said conductive feature on said substrate is patterned to form bus lines for a flat panel display.
22 . A method as recited in claim 1 , wherein said conductive feature on said substrate is patterned to form under bump metallization.
23 . A method for the fabrication of a dielectric electronic feature on a substrate, comprising the steps of:
(a) providing a substrate having a recessed feature; (b) depositing a dielectric precursor composition comprising at least a molecular precursor to a dielectric compound into at least a portion of said recessed feature; and (c) heating said dielectric precursor composition to a temperature of not greater than about 350° C. to convert said dielectric precursor composition to a dielectric feature.
24 . A method as recited in claim 23 , wherein said substrate is a polymer.
2 . A method as recited in claim 23 , wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, -acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile and butadiene (ABS).
25 . A method as recited in claim 23 , wherein said heating step comprises heating to a temperature of not greater than about 300° C.
26 . A method as recited in claim 23 , wherein said substrate is a glass.
27 . A method as recited in claim 23 , wherein said dielectric precursor composition comprises glass particles.
28 . A method as recited in claim 23 , wherein said dielectric precursor composition comprises dielectric particles having a dielectric constant of at least about 40.
29 . A method as recited in claim 23 , wherein said depositing step comprises applying said precursor composition over said substrate and using a doctor blade to force said precursor composition into said recessed feature.
30 . A method as recited in claim 23 , further comprising the step of modifying the surface of said recessed feature to modify the surface energy of said recessed feature.
31 . A method for the fabrication of an inorganic resistor on a substrate, comprising the steps of:
(a) providing a substrate having a recessed feature; (b) depositing a resistor precursor composition into at least a portion of said recessed feature, said resistor precursor composition comprising at least a molecular precursor compound to a metal or a metal oxide; and (c) heating said resistor precursor composition to a temperature of not greater than about 350° C. to convert said resistor precursor composition to an inorganic resistor.
32 . A method as recited in claim 31 , wherein said substrate is a polymer.
33 . A method as recited in claim 31 , wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e. wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile and butadiene (ABS).
34 . A method as recited in claim 31 , wherein said substrate is a glass.
35 . A method as recited in claim 31 , wherein said resistor precursor composition comprises glass particles.
36 . A method as recited in claim 31 , wherein said depositing step comprises applying said precursor composition using a doctor blade to force said precursor composition into said recessed feature.
37 . A method as recited in claim 31 , further comprising the step of modifying the surface of said recessed feature to modify the surface energy of said recessed feature.Join the waitlist — get patent alerts
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