Photodiode of end face incident type

Abstract

A photodiode 10 of end face incident type which comprises a laminate consisted of an intrinsic semiconductor layer 16 between semiconductor pn conjunction layers 14 and 15 of n-type and p-type InGaAsP. The intrinsic semiconductor layer is formed by InGaAsP to increase a light absorbing region in the intrinsic semiconductor layer 16 toward a direction of depth from the light receiving end plane so as to control light absorptance of the absorbing layer.

What is claimed is:  
     
         1 . A photodiode of end face incident type which comprises a laminate consisted of an intrinsic semiconductor layer between semiconductor pn conjunction layers of n-type and p-type InGaAsP and an end face across each laminated layer of the laminate as a light receiving plane, the intrinsic semiconductor layer being formed by InGaAsP to increase a light absorbing region in the intrinsic semiconductor layer toward a direction of depth from the light receiving end plane.  
     
     
         2 . The photodiode of end face incident type according to  claim 1 , wherein light absorptance in an intrinsic semiconductor layer is about 2,500/cm with regard to light to be dealt with.  
     
     
         3 . The photodiode of end face incident type according to  claim 1 , wherein a percentage composition of In in the III group elements used in an intrinsic semiconductor layer of InGaAsP is about 0.589 and a percentage composition of As in the group V elements is about 0.863.  
     
     
         4 . The photodiode of end face incident type according to  claim 1 , wherein a percentage composition of In in the III group elements used in an intrinsic semiconductor is about 0.586 and a percentage composition of As in the group V elements is about 0.887.