US2003098038A1PendingUtilityA1

System and method for on-site generation and distribution of fluorine for fabrication processes

Priority: Nov 26, 2001Filed: Jul 12, 2002Published: May 29, 2003
Est. expiryNov 26, 2021(expired)· nominal 20-yr term from priority
F17C 2221/016B01D 2257/2047F17C 2223/0123F17C 2221/017B01D 2258/0208C23C 16/4405C25B 1/245F17C 2227/044F17C 9/00F17C 2270/0518C01B 7/191
25
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Claims

Abstract

An system and method for on-site generation and distribution of fluorine for semiconductor processes are disclosed. In one aspect, a system for providing fluorine in association with a fabrication process includes a fluorine generator operable to provide fluorine having a concentration and a distributor operable to transfer a volume of fluorine to a selective processing tool. A disclosed method for providing fluorine for a fabrication process includes generating fluorine at a location associated with a process tool and distributing the fluorine to the process tool to be used in association with the fabrication process.

Claims

exact text as granted — not AI-modified
What is claimed:  
     
         1 . A method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing, comprising the steps of: converting a feed gas to a cleaning gas in a remote location, wherein said feed gas does not clean the process chamber; and delivering said cleaning gas to the process chamber.  
     
     
         2 . The method of  claim 1 , further comprising the step of: activating said cleaning gas outside the chamber prior to delivering said cleaning gas to the process chamber.  
     
     
         3 . The method of  claim 2 , wherein said step of activating is performed through a means selected from the group consisting of a remote plasma source, a heat source, and an electrical source.  
     
     
         4 . The method of  claim 3 , wherein said remote plasma source is selected from the group consisting of a microwave energy source and a radiofrequency energy source.  
     
     
         5 . The method of  claim 1 , wherein said feed gas is HF.  
     
     
         6 . The method of  claim 5 , wherein the cleaning gas is F.sub.2.  
     
     
         7 . The method of  claim 6 , wherein the conversion is done by electrolysis.  
     
     
         8 . A method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing, comprising the steps of: converting a feed gas to a cleaning gas in a remote location, wherein the resulting gas is a mixture of the feed gas and the cleaning gas; transferring the resulting gas mixture to a trap, wherein the feed gas is converted into a liquid form, and the cleaning gas remains in a gaseous form; and delivering said cleaning gas to the process chamber.  
     
     
         9 . The method of  claim 8 , prior to said step of delivering the cleaning gas to the process chamber, further comprising the step of: pumping the cleaning gas into a storage unit.  
     
     
         10 . The method of  claim 9 , after the step of pumping the cleaning gas into a storage unit, further comprising the step of: activating the cleaning gas outside the chamber before delivering the cleaning gas to the chamber.  
     
     
         11 . The method of  claim 10 , wherein said step of activating is performed through a means selected from the group consisting of a remote plasma source, a heat source, and an electrical source.  
     
     
         12 . The method of  claim 11 , wherein said remote plasma source is is selected from the group consisting of a microwave energy source and a radiofrequency energy source.  
     
     
         13 . The method of  claim 8 , wherein said feed gas is HF.  
     
     
         14 . The method of  claim 13 , wherein the cleaning gas is F.sub.2.  
     
     
         15 . The method of  claim 14 , wherein the conversion is done by electrolysis.

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