US2003096457A1PendingUtilityA1

Sonic transducers bonded with polymers and methods of making same for efficient sonic energy transfer

Priority: Nov 19, 2001Filed: Nov 19, 2002Published: May 22, 2003
Est. expiryNov 19, 2021(expired)· nominal 20-yr term from priority
H10P 72/0416B08B 3/12G10K 11/004
24
PatentIndex Score
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Claims

Abstract

The present invention contemplates methods of bonding devices that produce sonic energy to polymer articles, the bonded articles themselves, methods for fabricating a semiconductor processing apparatus, and the apparatus itself. The present invention provides for an apparatus comprised of polymers, which is not susceptible to corrosion and permit the transmission of sonic energy through the walls of the apparatus. The polymer can be, for example, a fluoropolymer.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method for adhering a sonic device to a polymer surface comprising the steps of: 
 providing a polymer surface having a bonded portion that is to be adhered to a sonic device, wherein the polymer is a fluoropolymer, polyethylene, polypropylene, or combination thereof;    etching at least a portion of the bonded portion with an etching agent;    treating the sonic device and the etched portion of the bonded portion with a washing solution;    bringing the sonic device and the bonded portion of the polymer surface together, wherein an adhesive is applied in between the bonded portion of the polymer surface and the sonic device; and    curing the adhesive.    
     
     
         2 . The method of  claim 1  wherein the adhesive is applied to the bonding portion.  
     
     
         3 . The method of  claim 1  further comprising the step of roughing the surface of the bonding portion to a roughness from about 250 to about 500 RMS, said roughing step occurring before the adhesive is applied.  
     
     
         4 . The method of  claim 1  further comprising the step of coating the sonic device and polymer surface in a thermo-conductive polymer after the adhesive is cured.  
     
     
         5 . The method of  claim 1  further comprising the step of machining the polymer surface to form a recess before the etching step, said bonding portion located within the recess.  
     
     
         6 . The method of  claim 1  wherein the sonic device comprises a crystalline material.  
     
     
         7 . The method of  claim 6  wherein a layer of metal is adhered to the polymer surface and a sonic device is adhered to the layer of metal.  
     
     
         8 . The method of  claim 7 , wherein the metal is aluminum, stainless steel, titanium, or manganese.  
     
     
         9 . The method of  claim 1  wherein the sonic device is a sonic transducer.  
     
     
         10 . The method of  claim 1 , wherein the polymer comprises fluoropolymers.  
     
     
         11 . The method of  claim 1 , wherein the polymer is polytetrafluoroethylene, perfluoroalkoxy, fluorinated ethylene propylene, modified polytetrafluoroethylene, ethylene tetrafluoroethylene, CTFE polychlorotrifluoroethylene, ECTFE ethylene-chlorotrifluoroethylene, PVDF polyvinylidine fluoride, polypropylene, and polyethylene.  
     
     
         12 . A semiconductor processing apparatus comprising: 
 a wall comprising a polymer and having a bonded portion;    a bottom comprising a polymer;    at least one sonic device adhered to the bonding portion of the wall; and    an adhesive disposed between the sonic device and the bonding portion of the wall.    
     
     
         13 . The apparatus of  claim 12  wherein the wall further comprises a layer of metal.  
     
     
         14 . The apparatus of  claim 13  wherein the layer of metal is adhered to the polymer surface and the sonic device is adhered to the layer of metal.  
     
     
         15 . The apparatus of  claim 12  wherein the polymer comprises fluoropolymers.  
     
     
         16 . The apparatus of  claim 12  wherein the polymer comprises polytetrafluoroethylene, perfluoroalkoxy, fluorinated ethylene propylene, modified polytetrafluoroethylene, ethylene tetrafluoroethylene, CTFE polychlorotrifluoroethylene, ECTFE ethylene-chlorotrifluoroethylene, PVDF polyvinylidine fluoride, polypropylene, and polyethylene.  
     
     
         17 . The apparatus of  claim 12  wherein the metal is aluminum, stainless steel, titanium, or manganese.  
     
     
         18 . The apparatus of  claim 12  wherein the sonic device is a sonic transducer.  
     
     
         19 . A method for fabricating a semiconductor processing apparatus comprising the steps of: 
 fabricating a plurality of walls, wherein one or more walls have a bonded portion, a wall made by: 
 providing a polymer layer;  
 etching at least a portion of the bonded portion with an etching agent;  
 treating a sonic device and the etched portion of the bonded portion with a washing solution;  
 bringing the sonic device and the bonded portion of the polymer layer together, wherein an adhesive is applied in between the bonded portion of the polymer layer and the sonic device; and  
 curing the adhesive; and  
   fusing the walls together to make an apparatus.    
     
     
         20 . The method of  claim 19  further comprising the step of bonding a layer of metal to the polymer layer.  
     
     
         21 . The method of  claim 20  wherein a layer of metal is adhered to the polymer layer and a sonic device is adhered to the layer of metal.  
     
     
         22 . The method of  claim 19  wherein the polymer layer comprises fluoropolymers.  
     
     
         23 . The method of  claim 19  wherein the polymer layer comprises polytetrafluoroethylene, perfluoroalkoxy, fluorinated ethylene propylene, modified polytetrafluoroethylene, ethylene tetrafluoroethylene, CTFE polychlorotrifluoroethylene, ECTFE ethylene-chlorotrifluoroethylene, PVDF polyvinylidine fluoride, polypropylene, and polyethylene.  
     
     
         24 . The method of  claim 19  wherein the metal is aluminum, stainless steel, titanium, or manganese.  
     
     
         25 . The method of  claim 19  wherein the sonic device is a sonic transducer.  
     
     
         26 . The method of  claim 19  wherein the sonic device comprises a crystalline material.  
     
     
         27 . A method for fabricating a semiconductor processing apparatus comprising the steps of: 
 shaping one or more blocks of material to form a chamber, said chamber having at least one bonded portion;    forming one or more etched portions by etching at least a portion of a bonded portion with an etching agent;    treating one or more sonic devices and an etched portion with a washing solution;    bringing a sonic device and a bonded portions together, wherein an adhesive is applied between a bonded portion and a sonic device; and    curing the adhesive.

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