Etch-stop resins

Abstract

Silicone resins comprising 5 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 95 mole % (HSiO (3-x)/2 (OH) x ), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher. These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher.

What is claimed is:  
     
         1 . A silicone resin comprising 5 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 95 mole % (HSiO (3-x)/2 (OH) x ) units based on the total amount of silicon containing units in the resin, where Ph is a phenyl group and x has a value of 0, 1 or 2.  
     
     
         2 . The silicone resin as claimed in  claim 1  wherein there is 25 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 75 mole % (HSiO (3-x)/2 (OH) x ) units in the silicone resin.  
     
     
         3 . The silicone resin as claimed in  claim 1  wherein there is 30 to 45 mole % of (PhSiO (3-x)/2 (OH) x ) units and 55 to 70 mole % (HSiO (3-x)/2 (OH) x ) units in the silicone resin.  
     
     
         4 . The silicone resin as claimed in  claim 1  wherein less than 40 mole % of the units in the silicone resin contain Si—OH groups.  
     
     
         5 . The silicone resin as claimed in  claim 1  wherein 6 to 38 mole % of the units in the silicone resin contain Si—OH groups.  
     
     
         6 . A composition comprising 
 (I) a silicone resin comprising 5 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 95 mole % (HSiO (3-x)/2 (OH) x ) units based on the total amount of silicon containing units in the resin, where Ph is a phenyl group and x has a value of 0, 1 or 2.    (II) a solvent.    
     
     
         7 . The solution as claimed in  claim 6  wherein the solvent is present in an amount of 40 to 99.5 wt % based on the weight of the silicone resin and solvent.  
     
     
         8 . The solution as claimed in  claim 6  wherein the solvent is chose from propylene glycol methyl ether acetate, cyclohexanone, γ-butyrolacetone, methyl isobutyl ketone, methyl propyl ketone, mesitylene, silicones.  
     
     
         9 . A phenylated-oxide dielectric having a critical surface free energy of at least 30 dynes/cm.  
     
     
         10 . The dielectric as claimed in  claim 9  wherein the critical surface free energy is in the range of 35 to 60 dynes/cm.  
     
     
         11 . The dielectric as claimed in  claim 9  wherein the critical surface free energy is in the range of 35 to 45 dynes/cm.  
     
     
         12 . A method of producing a phenylated-oxide dielectric comprising 
 (I) applying silicone resin comprising 5 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 95 mole % (HSiO (3-x)/2 (OH) x ) units based on the total amount of silicon containing units in the resin, where Ph is a phenyl group and x has a value of 0, 1 or 2 to a substrate,    (II) heating the coated substrate to a temperature in the range of 100° C. to 450° C. to cure the silicone resin.    
     
     
         13 . The method as claimed in  claim 12  wherein there is 25 to 50 mole % of (PhSiO (3-x)/2 (OH) x ) units and 50 to 75 mole % (HSiO (3-x)/2 (OH) x ) units in the silicone resin.  
     
     
         14 . The method as claimed in  claim 12  wherein there is 30 to 45 mole % of (PhSiO (3-x)/2 (OH) x ) units and 55 to 70 mole % (HSiO (3-x)/2 (OH) x ) units in the silicone resin.  
     
     
         15 . The method as claimed in  claim 12  wherein less than 40 mole % of the units in the silicone resin contain Si—OH groups.  
     
     
         16 . The method as claimed in  claim 12  wherein 6 to 38 mole % of the units in the silicone resin contain Si—OH groups.  
     
     
         17 . The method as claimed in  claim 12  wherein the silicone resin is applied to a substrate by spin coating.  
     
     
         18 . The method as claimed in  claim 12  wherein the coated substrate is heated to a temperature of 100° C. to 450° C.  
     
     
         19 . The method as claimed in  claim 12  wherein the silicone resin additionally comprises 40 to 99.5 wt % of a solvent, based on the weight of the silicone resin and solvent  
     
     
         20 . An integrated circuit comprising a dielectric material wherein the dielectric material comprises 
 (A) at least one organic dielectric layer having a critical surface free energy of at least 40 dynes/cm and    (B) at least one phenylated-oxide dielectric layer having a critical surface free energy of at least 30 dynes/cm.    
     
     
         21 . The integrated circuit as claimed in  claim 20  wherein the critical surface free energy of the phenylated-oxide dielectric is in the range of 35 to 60 dynes/cm.  
     
     
         22 . The integrated circuit as claimed in  claim 20  wherein the critical surface free energy of the phenylated-oxide dielectric is in the range of in the range of 35 to 45 dynes/cm.  
     
     
         23 . The integrated circuit as claimed in  claim 20  wherein the phenylated-oxide dielectric layer is applied over the organic dielectric layer.  
     
     
         24 . The integrated circuit as claimed in  claim 20  wherein the organic dielectric layer is applied over the phenylated-oxide dielectric layer.