Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilities

Abstract

A method for controlling the voltage distribution of the standing wave impressed upon the coil of an inductively coupled plasma generator includes the steps of impressing a radio frequency voltage across the coil to establish a standing wave thereacross. A voltage profile is selected for the standing wave so as to control the location and amount of capacitive coupling. A circuit parameter is controlled to achieve the selected voltage profile. Proper selection of the voltage profile enhances process capabilities, decreases the time between cleans, minimizes component wear, and minimizes cleaning time. An apparatus for carrying out the disclosed method is also disclosed.

What is claimed is:  
     
         1 . A method, comprising: 
 impressing a radio frequency voltage across a coil to establish a standing wave thereacross;    selecting a voltage profile for said standing wave so as to control the location and amount of capacitive coupling; and    controlling a circuit parameter to achieve said selected voltage profile.    
     
     
         2 . The method of  claim 1  wherein said step of controlling a circuit parameter includes the step of controlling the value of one of a capacitor and an inductor connected between an end of the coil and ground.  
     
     
         3 . The method of  claim 1  wherein said step of selecting said voltage profile incudes the step of selecting a voltage profile so as to achieve maximum capacitive coupling at a point where maximum cleaning is desired.  
     
     
         4 . A method of controlling the voltage impressed across an inductive coil of a plasma chamber during processing of items to optimize cleaning efficiency during a subsequent cleaning cycle, comprising: 
 impressing a radio frequency voltage across a coil to establish a standing wave thereacross;    selecting a voltage profile for said standing wave so as to achieve optimum polymer deposition during processing of an item at a location where cleaning can be achieved most efficiently; and    controlling a circuit parameter to achieve said selected voltage profile.    
     
     
         5 . The method of  claim 4  wherein said step of controlling a circuit parameter includes the step of controlling the value of one of a capacitor and an inductor connected between an end of the coil and ground.  
     
     
         6 . The method of  claim 4  wherein the processing of items includes performing an etch step on solid state devices.  
     
     
         7 . The method of  claim 4  wherein the processing of items includes performing a deposition step on solid state devices.  
     
     
         8 . The method of  claim 4  wherein said voltage profile selected for the processing of items is different from the voltage profile selected during the subsequent cleaning cycle.  
     
     
         9 . A method of controlling the voltage impressed across an inductive coil of a plasma chamber during a cleaning cycle, comprising: 
 impressing a radio frequency voltage across a coil to establish a standing wave thereacross;    selecting a voltage profile for said standing wave so as to control a location where maximum cleaning is to occur; and    controlling a circuit parameter to achieve said selected voltage profile.    
     
     
         10 . The method of  claim 9  additionally comprising the step of varying the voltage profile during the cleaning cycle.  
     
     
         11 . The method of  claim 10  wherein said step of varying the voltage profile includes the step of varying the voltage profile in a stepwise manner.  
     
     
         12 . The method of  claim 10  wherein said step of varying the voltage profile includes the step of varying the voltage profile in a continuous manner.  
     
     
         13 . The method of  claim 9  wherein said step of controlling a circuit parameter includes the step of controlling the value of one of a capacitor and an inductor connected between an end of the coil and ground.  
     
     
         14 . An apparatus, comprising: 
 a radio frequency generator;    a coil having a first end connected to said radio frequency generator and a second end; and    a component having an adjustable value, said component connected between said second end of said coil and ground whereby adjusting the value of said component enables the selection of a voltage profile for a standing wave set up across said coil by said generator.    
     
     
         15 . The apparatus of  claim 14  wherein said component includes a variable capacitor.  
     
     
         16 . The apparatus of  claim 14  wherein said component includes a variable inductor.  
     
     
         17 . The apparatus of  claim 14  additionally comprising a matching circuit connected between said generator and said first end of said coil.  
     
     
         18 . A plasma processing apparatus, comprising: 
 a chamber;    a gas handling system servicing said chamber;    a wafer handling system servicing said chamber;    a radio frequency generator;    a coil having a first end connected to said radio frequency generator and a second end, said coil being located so as to radiate energy into said chamber and generate a plasma; and    a component having an adjustable value, said component connected between said second end of said coil and ground whereby adjusting the value of said component controls a standing wave impressed along said coil.    
     
     
         19 . The apparatus of  claim 18  wherein said component includes a variable capacitor.  
     
     
         20 . The apparatus of  claim 18  wherein said component includes a variable inductor.  
     
     
         21 . The apparatus of  claim 18  additionally comprising a matching circuit connected between said generator and said coil.