Metal film production apparatus

Abstract

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

What is claimed is:  
     
         1 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate and having an upper portion open;    source gas supply means for supplying a source gas containing a halogen into the chamber;    a ceiling member made of an insulating material for closing an opening of the upper portion of the chamber;    an antenna member provided outwardly of the ceiling member and adapted to convert an atmosphere within the chamber into a plasma by supply of power;    an etched member made of a metal and comprising a plurality of segments which are arranged between the substrate and the ceiling member in a discontinuous state relative to a flowing direction of electricity in the antenna member;    plasma generation means which supplies power to the antenna member to generate on a substrate side of the etched member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor of a metal component contained in the etched member and the source gas; and    temperature control means for controlling a temperature of the substrate to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film.    
     
     
         2 . A metal film production apparatus, comprising: 
 a cylindrical chamber accommodating a substrate and open at one end;    a disk-shaped ceiling member made of an insulating material for closing an opening of the chamber;    source gas supply means for supplying a source gas containing a halogen into the chamber;    an antenna member of a planar ring shape provided outwardly of the ceiling member and adapted to convert an atmosphere within the chamber into a plasma by supply of power;    an etched member made of a metal and comprising a plurality of segments which are arranged in a circumferential direction of the chamber and extend in a diametrical direction of the chamber between the substrate and the ceiling member, and which are in a discontinuous state relative to a flowing direction of electricity in the antenna member;    plasma generation means which supplies power to the antenna member to generate on a substrate side of the etched member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor of a metal component contained in the etched member and the source gas; and    temperature control means for controlling a temperature of the substrate to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film.    
     
     
         3 . A metal film production apparatus, comprising: 
 a cylindrical chamber accommodating a substrate and open at one end;    an outwardly curved convex ceiling member made of an insulating material for closing an opening of the chamber;    source gas supply means for supplying a source gas containing a halogen into the chamber;    an antenna member of a conical ring shape provided in surroundings outward of the ceiling member and adapted to convert an atmosphere within the chamber into a plasma by supply of power;    an etched member made of a metal and comprising a plurality of segments which are arranged in a circumferential direction of the chamber and extend in a diametrical direction of the chamber between the substrate and the ceiling member, and which are in a discontinuous state relative to a flowing direction of electricity in the antenna member;    plasma generation means which supplies power to the antenna member to generate on a substrate side of the etched member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor of a metal component contained in the etched member and the source gas; and    temperature control means for controlling a temperature of the substrate to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film.    
     
     
         4 . A metal film production apparatus, comprising: 
 a cylindrical chamber accommodating a substrate and open at one end;    a disk-shaped ceiling member made of an insulating material for closing an opening of the chamber;    a tubular portion made of an insulating material which is provided on the one end of the chamber;    source gas supply means for supplying a source gas containing a halogen into the chamber;    an antenna member of a planar ring shape provided outwardly of the ceiling member and adapted to convert an atmosphere within the chamber into a plasma by supply of power;    a coil antenna member of a cylindrical coil shape provided around the tubular portion and adapted to convert the atmosphere within the chamber into a plasma by supply of power;    an etched member made of a metal and comprising a plurality of segments which are arranged in a circumferential direction of the chamber and extend in a diametrical direction of the chamber between the substrate and the ceiling member, and which are in a discontinuous state relative to a flowing direction of electricity in the antenna member and the coil antenna member;    plasma generation means which supplies power to the antenna member and the coil antenna member to generate on a side of the etched member opposite to the antenna member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor of a metal component contained in the etched member and the source gas; and    temperature control means for controlling a temperature of the substrate to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film.    
     
     
         5 . The metal film production apparatus of any one of  claims 1  to  4 , further comprising same potential maintaining means for connecting the plurality of segments of the etched member electrically to impart same potential thereto.  
     
     
         6 . The metal film production apparatus of any one of  claims 1  to  5 , wherein the temperature control means is means provided in the etched member and adapted to keep the etched member at a higher temperature than the temperature of the substrate.  
     
     
         7 . The metal film production apparatus of any one of  claims 1  to  5 , wherein the source gas supply means is a gas supply passage and gas ejection holes provided in the etched member, the gas ejection holes communicating with the gas supply passage.  
     
     
         8 . The metal film production apparatus of any one of  claims 1  to  7 , wherein a concave portion for creating a discontinuous concavity is formed in a surface of the etched member facing the substrate.  
     
     
         9 . The metal film production apparatus of any one of  claims 1  to  8 , wherein the source gas containing the halogen is a source gas containing chlorine.  
     
     
         10 . The metal film production apparatus of  claim 9 , wherein the etched member is made of copper to form Cu x Cl y  as the precursor.  
     
     
         11 . The metal film production apparatus of any one of  claims 1  to  9 , wherein the etched member is made of tantalum, tungsten or titanium which is a halide-forming metal.  
     
     
         12 . A metal film production method involving converting an atmosphere within a chamber accommodating a substrate into a plasma by supply of power from an antenna member, comprising: 
 disposing an etched member made of a metal and comprising a plurality of segments which are arranged in a discontinuous state relative to a flowing direction of electricity in the antenna member;    supplying power to the antenna member to generate on a substrate side of the etched member a flow of electricity in the same direction as the flowing direction of electricity in the antenna member, thereby converting the atmosphere within the chamber into a plasma and generating a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor of a metal component contained in the etched member and a source gas; and    controlling a temperature of the substrate to be lower than a temperature of the etched member to deposit the metal component of the precursor on the substrate as a film.    
     
     
         13 . The metal film production method of  claim 12 , wherein the source gas containing the halogen is a source gas containing chlorine.  
     
     
         14 . The metal film production method of  claim 12 , wherein the etched member is made of copper to form Cu x Cl y  as the precursor.  
     
     
         15 . The metal film production method of  claim 12 , wherein the etched member is made of tantalum, tungsten or titanium which is a halide-forming metal.