Carbon film coated member

Abstract

The present invention provides a carbon film coated member comprising: a base material; and a coated film formed on at least part of a surface of the base material, the coated film comprising: a matrix composed of amorphous carbon; and at least one of metal and metal carbide contained in the matrix, wherein an atomic ratio (M/C) of the metal (M) to carbon (C) constituting the coated film is 0.01 to 0.7. According to the above structure, there can be provided a carbon film coated member excellent in low-friction property, wear resistance and durability, and capable of suppressing a dust generation, peeling-off and deterioration of the coated film even if the carbon film coated member is used as semiconductor equipment members such as wafer cassette, dummy wafer, probe pin or the like under severe operating conditions, so that the carbon film coated member would not exert a bad influence onto the resultant semiconductor products.

What is claimed is:  
     
         1 . A carbon film coated member comprising: 
 a base material; and    a coated film formed on at least part of a surface of said base material, said coated film comprising: a matrix composed of amorphous carbon; and at least one of metal and metal carbide contained in said matrix,    wherein an atomic ratio (M/C) of the metal (M) to carbon (C) constituting said coated film is 0.01 to 0.7.    
     
     
         2 . The carbon film coated member according to  claim 1 , wherein said at least one of metal and metal carbide contained in said matrix is at least one selected form a group consisting of molybdenum, tungsten, tantalum, niobium, silicon, boron, titanium, chromium and carbides thereof.  
     
     
         3 . The carbon film coated member according to  claim 1 , wherein said coated film containing said at least one of metal and metal carbide has a thickness of 5 μm or less.  
     
     
         4 . The carbon film coated member according to  claim 1 , wherein an intermediate layer having a single layer structure or a plurality of layers composed of at least one of metal, nitride, carbide and boride is disposed between said coated film and said base material.  
     
     
         5 . The carbon film coated member according to  claim 1 , wherein said carbon film coated member is used in a wafer processing unit or a glass substrate processing unit, and said member constitutes semiconductor manufacturing apparatus member to which at least one of plasma, ion beam and electron shower is irradiated.  
     
     
         6 . The carbon film coated member according to  claim 5 , wherein said wafer processing unit is at least one of etching device, sputtering device, CVD device and ion injecting device.  
     
     
         7 . The carbon film coated member according to  claim 1 , wherein said carbon film coated member is a semiconductor manufacturing apparatus member, and said member constitutes a sliding portion which contacts and slides with a semiconductor part or a device member.  
     
     
         8 . The carbon film coated member according to  claim 7 , wherein said atomic ratio (M/C) of the metal (M) to carbon (C) contained in said coated film is 0.1 to 0.5.  
     
     
         9 . The carbon film coated member according to  claim 1 , wherein said carbon film coated member is a dummy wafer in which said coated film is formed on a surface of a wafer base material, and said atomic ratio (M/C) of the metal (M) to carbon (C) contained in said coated film is 0.05 to 0.2.  
     
     
         10 . The carbon film coated member according to  claim 9 , wherein said wafer base material is composed of any one of silicon, glass and ceramics.  
     
     
         11 . The carbon film coated member according to  claim 9 , wherein said dummy wafer is used as a dummy wafer in a film forming operation based on at least one of sputtering method, CVD method, etching method, ion injecting method and mechanochemical-polishing.  
     
     
         12 . The carbon film coated member according to  claim 9 , wherein said coated film is formed on at least part of the wafer base material.  
     
     
         13 . The carbon film coated member according to  claim 1 , wherein said carbon film coated member is a probe pin in which said coated film is formed on a surface of a base material, and said atomic ratio (M/C) of the metal (M) to carbon (C) contained in said coated film is 0.2 to 0.7.