Semiconductor package having dam and method for fabricating the same

Abstract

A semiconductor package including a dam and a method for fabricating the same are provided. The semiconductor package comprises a package substrate, a semiconductor chip attached to the substrate, a TIM formed on the semiconductor chip, a dam that substantially surrounds the TIM, and a lid placed over the TIM to contact a surface thereof. Thus, a TIM can be prevented from flowing down from the original position at high temperatures. Therefore, the performance of the semiconductor package does not deteriorate even at high temperatures.

What is claimed is:  
     
         1 . A semiconductor package comprising: 
 a package substrate;    a semiconductor chip attached to the substrate;    a TIM formed on the semiconductor chip;    a dam that substantially surrounds the TIM; and    a lid placed over the TIM to contact a surface thereof.    
     
     
         2 . The semiconductor package of  claim 1 , wherein the dam is formed on the substrate and in contact with the sides of the TIM and the semiconductor chip.  
     
     
         3 . The semiconductor package of  claim 2 , wherein the lid is processed to increase a surface that is in contact with the TIM.  
     
     
         4 . The semiconductor package of  claim 3 , wherein the lid is processed to have irregularities on its portion that is in contact with the TIM or dam.  
     
     
         5 . The semiconductor package of  claim 4 , wherein the irregularities are triangle, square or hemispherical-shaped.  
     
     
         6 . The semiconductor package of  claim 1 , wherein the dam is formed on the semiconductor chip and is in contact with the sides of the TIM.  
     
     
         7 . The semiconductor package of  claim 6 , wherein the lid is processed to increase a surface that in contact with the TIM.  
     
     
         8 . The semiconductor package of  claim 7 , wherein the lid is processed to have irregularities on its portion that is in contact with the TIM or dam.  
     
     
         9 . The semiconductor package of  claim 8 , wherein the irregularities are triangle, square or hemispherical-shaped.  
     
     
         10 . The semiconductor package of  claim 2 , wherein the lid further comprises a supporter for supporting the dam.  
     
     
         11 . The semiconductor package of  claim 10 , wherein the lid comprises injection holes through which materials required to form the dam and TIM are injected.  
     
     
         12 . The semiconductor package of  claim 2 , wherein the lid is attached to the substrate via a sealant and covers the semiconductor chip and the dam.  
     
     
         13 . The semiconductor package of  claim 1 , wherein the dam extends between the lid and the top of the semiconductor chip.  
     
     
         14 . The semiconductor package of  claim 1 , wherein the dam is formed of a material that is not liquefied at least below about 125° C.  
     
     
         15 . The semiconductor package of  claim 14 , wherein the material that is not liquefied below about 125° C. comprises a thermosetting epoxy.  
     
     
         16 . A semiconductor package comprising: 
 a package substrate;    a semiconductor chip attached to the substrate;    a TIM attached to the top of the semiconductor chip;    a lid being in contact with the top of the TIM, wherein the lid covers the semiconductor chip and dam and have a square-shaped recess at its bottom; and    a dam formed along the periphery of the recess of the lid and being in contact with the TIM.    
     
     
         17 . The semiconductor package of  claim 16 , wherein the dam is formed within the recess.  
     
     
         18 . The semiconductor package of  claim 16 , wherein the dam is formed of an elastomer.  
     
     
         19 . A method for fabricating a semiconductor package including a dam, the method comprising: 
 attaching a semiconductor chip to a package substrate;    forming a TIM on the semiconductor chip;    forming a dam on the resultant structure to prevent the TIM from flowing down at high temperatures; and    covering the TIM and the semiconductor chip using a lid, wherein the TIM and the dam are in contact with the bottom of the lid.    
     
     
         20 . The method of  claim 19 , wherein forming a TIM is performed after forming a dam.  
     
     
         21 . The method of  claim 19 , wherein forming a dam is performed after forming a TIM.  
     
     
         22 . The method of  claim 19 , wherein the dam is positioned on the substrate and in contact with the sides of the semiconductor chip and the TIM.  
     
     
         23 . The method of  claim 22 , wherein the lid further comprises a supporter for supporting the dam.  
     
     
         24 . The method of  claim 19 , wherein the dam is formed on the semiconductor chip and in contact with the sides of the TIM.  
     
     
         25 . The method of  claim 19 , wherein the lid is processed to increase a portion that is in contact with the TIM.  
     
     
         26 . The method of  claim 25 , wherein the lid has triangle, square or hemispherical-shaped irregularities.  
     
     
         27 . A method for fabricating a semiconductor package including a dam, the method comprising: 
 preparing a substrate;    attaching a semiconductor chip to the substrate;    attaching a lid to the substrate, wherein the lid comprises a supporter and injection holes formed therethrough;    injecting a first liquid material to form a dam through the injection holes of the lid; and    injecting a second liquid material to form a TIM through the injection holes.    
     
     
         28 . The method of  claim 27 , wherein injecting a first liquid material is performed after injecting a second liquid material.  
     
     
         29 . The method of  claim 27 , wherein injecting a second liquid material is performed after injecting a first liquid material.  
     
     
         30 . A method for fabricating a semiconductor package including a dam, the method comprising: 
 preparing a substrate;    attaching a semiconductor chip to the substrate;    forming a TIM on the semiconductor chip;    processing a lid to have a square-shaped recess at its bottom such that portions of the TIM and semiconductor chip are placed within the recess;    inserting a dam within the recess;    attaching the lid to the substrate such that the TIM is in contact with the surface of the lid within the recess so as to prevent the TIM from flowing down by the dam.    
     
     
         31 . The method of  claim 30 , wherein the dam is formed of an elastomer.