Fabrication method of semiconductor integrated circuit device

Abstract

Provided is a fabrication method of a semiconductor integrated circuit device, which comprises disposing, in a ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, the present invention makes it possible to prevent run-off of ionized amine into the ultrapure water.

What is claimed is:  
     
         1 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) introducing, as first raw material water, indifferent water into a primary pure water system having a primary purifying system;    (b) introducing, as second raw material water, primary water, which has been obtained by the purification through said primary purifying system, into a secondary pure water circulating system having a secondary purifying system; and    (c) feeding a first wetting treatment apparatus with secondary pure water, which has been obtained by the purification through said secondary purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wetting treatment;    said step (c) including the sub-steps of: 
 (C1) removing ions through an ion removing filter;  
 (c2) removing foreign particles through an ultrafiltration filter; and  
 (c3) feeding said first wetting treatment apparatus with the pure water, which has passed through said ion removing filter and said ultrafiltration filter,  
   wherein, from said secondary pure water fed to said first wetting treatment apparatus, an ionized amine or ionized amine substance has been removed to such an extent as not to affect the characteristics of the semiconductor integrated circuit device to be fabricated using said secondary pure water.    
     
     
         2 . A fabrication method according to  claim 1 , wherein said ion removing filter and said ultrafiltration filter are disposed within said secondary purification system.  
     
     
         3 . A fabrication method according to  claim 2 , wherein said ultrafiltration filter is a heat welded type.  
     
     
         4 . A fabrication method according to  claim 3 , wherein said ion removing filter is a membrane type.  
     
     
         5 . A fabrication method according to  claim 3 , wherein said first wetting treatment is cleaning treatment.  
     
     
         6 . A fabrication method according to  claim 5 , wherein said semiconductor integrated circuit device comprises a flash memory portion.  
     
     
         7 . A fabrication method according to  claim 6 , wherein the characteristics of said semiconductor integrated circuit device are write or erase characteristics of the flash memory portion.  
     
     
         8 . A fabrication method according to  claim 3 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less.  
     
     
         9 . A fabrication method according to  claim 3 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less.  
     
     
         10 . A fabrication method according to  claim 3 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less.  
     
     
         11 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) introducing, as first raw material water, indifferent water into a primary pure water system having a primary purifying system;    (b) introducing, as second raw material water, primary water, which has been obtained by the purification through said primary purifying system, into a secondary pure water circulating system having a secondary purifying system; and    (c) feeding a first wetting treatment apparatus with secondary pure water, which has been obtained by the purification through said secondary purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wetting treatment;    said step (c) including the sub-steps of:    (c1) removing foreign particles from the pure water through an ultrafiltration filter;    (c2) removing ions from said pure water, which has passed through said ultrafiltration filter, by a membrane type ion removing filter; and    (c3) feeding said first wetting treatment apparatus with said pure water which has passed through said ion removing filter.    
     
     
         12 . A fabrication method according to  claim 11 , wherein said ion removing filter and said ultrafiltration filter are disposed in said secondary purifying system.  
     
     
         13 . A fabrication method according to  claim 12 , wherein said ultrafiltration filter is a heat welded type.  
     
     
         14 . A fabrication method according to  claim 13 , wherein said first wetting treatment is cleaning treatment.  
     
     
         15 . A fabrication method according to  claim 14 , wherein said semiconductor integrated circuit device has a flash memory portion.  
     
     
         16 . A fabrication method according to  claim 15 , wherein the characteristics of said semiconductor integrated circuit device are write or erase characteristics of the flash memory portion.  
     
     
         17 . A fabrication method according to  claim 11 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less.  
     
     
         18 . A fabrication method according to  claim 11 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less.  
     
     
         19 . A fabrication method according to  claim 11 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less.  
     
     
         20 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) introducing, as first raw material water, indifferent water into a primary pure water system having a primary purifying system;    (b) introducing, as second raw material water, primary water, which has been obtained by the purification through said primary purifying system, into a secondary pure water circulating system having a secondary purifying system; and    (c) feeding a first wetting treatment apparatus with secondary pure water, which has been obtained by the purification through said secondary purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wetting treatment;    said step (c) including the sub-steps of: 
 (c1) removing foreign particles from the pure water through an ultrafiltration filter disposed in said secondary purifying system;  
 (c2) removing ions from said pure water, which has passed through said ultrafiltration filter, by a membrane type ion removing filter disposed outside of said secondary pure water circulating system; and  
 (c3) feeding said first wetting treatment apparatus with said pure water, which has passed through said ion removing filter.  
   
     
     
         21 . A fabrication method according to  claim 20 , wherein said first wetting treatment is cleaning treatment.  
     
     
         22 . A fabrication method according to  claim 21 , wherein said semiconductor integrated circuit device has a flash memory portion.  
     
     
         23 . A fabrication method according to  claim 22 , wherein the characteristics of said semiconductor integrated circuit device are write or erase characteristics of the flash memory portion.  
     
     
         24 . A fabrication method according to  claim 20 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less.  
     
     
         25 . A fabrication method according to  claim 20 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less.  
     
     
         26 . A fabrication method according to  claim 20 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less.  
     
     
         27 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) introducing, as first raw material water, indifferent water into a primary pure water system having a primary purifying system;    (b) introducing, as second raw material water, primary water, which has been obtained by the purification through said primary purifying system, into a secondary pure water circulating system having a secondary purifying system; and    (c) feeding a first wetting treatment apparatus with secondary pure water, which has been obtained by the purification through said secondary purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wetting treatment;    said step (c) including the sub-steps of: 
 (c1) removing ions from the pure water through an ion removing filter disposed inside of said secondary purifying system,  
 (c2) causing pure water, which has passed through said ion removing filter, to pass through a heat welded type ultrafiltration filter disposed inside of said secondary purifying system, thereby removing foreign particles, and  
 (c3) feeding said first wetting treatment apparatus with said pure water which has passed through said ultrafiltration filter.  
   
     
     
         28 . A fabrication method according to  claim 27 , wherein said ion removing filter is a membrane type.  
     
     
         29 . A fabrication method according to  claim 27 , wherein said first wetting treatment is cleaning treatment.  
     
     
         30 . A fabrication method according to  claim 29 , wherein said semiconductor integrated circuit device has a flash memory portion.  
     
     
         31 . A fabrication method according to  claim 30 , wherein the characteristics of said semiconductor integrated circuit device are write or erase characteristics of the flash memory portion.  
     
     
         32 . A fabrication method according to  claim 29 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less.  
     
     
         33 . A fabrication method according to  claim 29 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less.  
     
     
         34 . A fabrication method according to  claim 29 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less.  
     
     
         35 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) introducing, as first raw material water, indifferent water into a primary pure water system having a primary purifying system;    (b) introducing, as second raw material water, primary water, which has been obtained by the purification through said primary purifying system, into a secondary pure water circulating system having a secondary purifying system; and    (c) feeding a first wetting treatment apparatus with secondary pure water, which has been obtained by the purification through said secondary purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wetting treatment;    said step (c) including the sub-steps of: 
 (c1) removing ions by an ion removing filter;  
 (c2) removing foreign particles through an ultrafiltration filter; and  
 (c3) feeding said first wetting treatment apparatus with said pure water, which has passed through said ion removing filter and said ultrafiltration filter,  
   wherein said ultrafiltration filter is disposed at a position permitting self cleaning.    
     
     
         36 . A fabrication method according to  claim 35 , wherein said ion removing filter and said ultrafiltration filter are disposed in said secondary purifying system.  
     
     
         37 . A fabrication method according to  claim 35 , wherein said first wetting treatment is cleaning treatment.  
     
     
         38 . A fabrication method according to  claim 37 , wherein said semiconductor integrated circuit device has a flash memory portion.  
     
     
         39 . A fabrication method according to  claim 38 , wherein the characteristics of said semiconductor integrated circuit device are write or erase characteristics of the flash memory portion.  
     
     
         40 . A fabrication method according to  claim 37 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less.  
     
     
         41 . A fabrication method according to  claim 37 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less.  
     
     
         42 . A fabrication method according to  claim 37 , wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less.  
     
     
         43 . A fabrication method of a semiconductor integrated circuit device, comprising the steps of: 
 (a) feeding a cleaning apparatus with ultrapure water through a filter having a cation removing property; and    (b) cleaning, with the ultrapure water fed through said filter, a main surface of a wafer on which a device is to be formed and which includes a portion from which a single crystal region having silicon as a principal component is exposed.    
     
     
         44 . A fabrication method according to  claim 43 , wherein said filter is a cation removing filter.