Plasma CVD apparatus

Abstract

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

What is claimed is:  
     
         1 . A plasma CVD apparatus comprising: 
 a reaction chamber constituted by a conductor and maintained in a decompressed state;    an electrode for supplying electric energy into the reaction chamber;    a substrate holder for holding a substrate opposite to the electrode;    a gas system for supplying a gas into the reaction chamber; and    an exhaust system for exhausting the reaction chamber,    wherein plasma is generated in a space surrounded by the electrode, the substrate holder, and an insulator.