Plasma treatment method

Abstract

A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

What is claimed is:  
     
         1 . A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber, comprising the steps of: 
 exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted; and    setting a deposition probability of the reaction products to be low in a central part of a plane of the substrate and setting a deposition probability of the reaction products to be high in a peripheral part of the plane of the substrate, by setting a temperature in the central part of the substrate to be higher than a temperature in the peripheral part of the substrate.