Methods of semiconductor processing

Abstract

The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

1 . An electronic device workpiece comprising: 
 a substrate having a surface;    a temperature sensing device borne by the substrate; and    an electrical interconnect provided upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device.    
     
     
         2 . The electronic device workpiece according to  claim 1  further comprising a wire connection adapted to electrically connect the electrical interconnect and the temperature sensing device.  
     
     
         3 . The electronic device workpiece according to  claim 1  wherein the electrical interconnect contacts the temperature sensing device.  
     
     
         4 . The electronic device workpiece according to  claim 1  wherein the workpiece has an edge and the electrical interconnect extends from the temperature sensing device to the edge of the electronic device workpiece.  
     
     
         5 . The electronic device workpiece according to  claim 1  further comprising a cavity including plural sloped sidewalls and a bottom wall within the substrate, the temperature sensing device being provided within the cavity.  
     
     
         6 . The electronic device workpiece according to  claim 5  wherein the sidewalls are sloped at an angle within the approximate range of fifty to sixty degrees with respect to the surface of the substrate.  
     
     
         7 . The electronic device workpiece according to  claim 1  further comprising an isolator intermediate the surface of the electronic device workpiece and individual ones of the electrical interconnect and the temperature sensing device.  
     
     
         8 . The electronic device workpiece according to  claim 1  further comprising an interface connection in electrical connection with the electrical interconnect, the interface connection being configured to provide electrical coupling of the electrical interconnect and the temperature sensing device with circuitry external of the electronic device workpiece.  
     
     
         9 . The electronic device workpiece according to  claim 1  wherein the electrical interconnect comprises a conductive trace.  
     
     
         10 . The electronic device workpiece according to  claim 1  wherein the temperature sensing device comprises a resistance temperature device.  
     
     
         11 . The electronic device workpiece according to  claim 1  wherein the substrate includes a via and a conductor within the via configured to electrically couple with the electrical interconnect.  
     
     
         12 . The electronic device workpiece according to  claim 1  further comprising plural additional temperature sensing devices borne by the substrate.  
     
     
         13 . The electronic device workpiece according to  claim 1  wherein the electronic device workpiece comprises a calibration workpiece.  
     
     
         14 . The electronic device workpiece according to  claim 1  wherein the substrate comprises a semiconductive substrate.  
     
     
         15 . The electronic device workpiece according to  claim 1  wherein the substrate comprises silicon.  
     
     
         16 . The electronic device workpiece according to  claim 1  wherein the substrate comprises silicon carbide.  
     
     
         17 . The electronic device workpiece according to  claim 1  wherein the substrate comprises gallium nitride.  
     
     
         18 . An electronic device workpiece comprising: 
 a substrate having a surface;    a cavity formed in the substrate, the cavity having sidewalls sloped at an angle within an approximate range of fifty to sixty degrees with respect to the surface of the substrate;    a temperature sensing device within the cavity of the substrate; and    an electrical interconnect coupled with the temperature sensing device.    
     
     
         19 . The electronic device workpiece according to  claim 18  wherein the electrical interconnect is formed upon the surface of the substrate.  
     
     
         20 . The electronic device workpiece according to  claim 18  further comprising a wire connection electrically connecting the electrical interconnect and the temperature sensing device.  
     
     
         21 . The electronic device workpiece according to  claim 18  wherein the electrical interconnect contacts the temperature sensing device.  
     
     
         22 . The electronic device workpiece according to  claim 18  wherein the workpiece has an edge and the electrical interconnect extends from the temperature sensing device to the edge of the electronic device workpiece.  
     
     
         23 . The electronic device workpiece according to  claim 18  wherein the sidewalls are sloped at approximately fifty-four degrees.  
     
     
         24 . The electronic device workpiece according to  claim 18  wherein the electronic device workpiece comprises a semiconductor wafer.  
     
     
         25 . The electronic device workpiece according to  claim 18  wherein the electronic device workpiece comprises a calibration workpiece.  
     
     
         26 . The electronic device workpiece according to  claim 18  wherein the electrical interconnect comprises a conductive trace.  
     
     
         27 . The electronic device workpiece according to  claim 18  wherein the temperature sensing device comprises a resistance temperature device.  
     
     
         28 . A semiconductor workpiece comprising: 
 a semiconductive substrate having a surface;    a temperature sensing device borne by the substrate; and    an electrical interconnect provided upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device.    
     
     
         29 . The semiconductor workpiece according to  claim 28  further comprising a cavity including plural sloped sidewalls and a bottom wall within the substrate, the temperature sensing device being provided within the cavity.  
     
     
         30 . The semiconductor workpiece according to  claim 28  wherein the electrical interconnect comprises a conductive trace.  
     
     
         31 . A semiconductor workpiece comprising: 
 a substrate having a surface and an edge;    a cavity formed in the substrate, the cavity having sidewalls sloped at an approximate fifty-four degree angle with respect to the surface of the substrate;    a resistance temperature device within the cavity of the substrate;    a plurality of conductive traces coupled with the resistance temperature device, the conductive traces being formed upon the surface of the substrate to contact the resistance temperature device, the conductive traces being configured to electrically couple the resistance temperature device with the edge of the substrate;    an isolator intermediate the surface of the electronic device workpiece and the conductive traces and the resistance temperature device; and    an interface connection in electrical connection with the conductive traces, the interface connection being configured to provide electrical coupling of the resistance temperature device with circuitry external of the semiconductor workpiece.    
     
     
         32 . A method of sensing temperature of an electronic device workpiece comprising: 
 providing an electronic device workpiece;    supporting a temperature sensing device using the electronic device workpiece;    providing an electrical interconnect upon a surface of the electronic device workpiece;    electrically coupling the electrical interconnect with the temperature sensing device; and    sensing temperature of the electronic device workpiece using the temperature sensing device.    
     
     
         33 . The method according to  claim 32  further comprising wire bonding the electrical interconnect and the temperature sensing device.  
     
     
         34 . The method according to  claim 32  further comprising: 
 forming a cavity in the electronic device workpiece; and  
 providing the temperature sensing device within the cavity.  
 
     
     
         35 . The method according to  claim 34  wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.  
     
     
         36 . The method according to  claim 34  wherein the forming the cavity comprises isotropically etching the electronic device workpiece.  
     
     
         37 . The method according to  claim 32  further comprising forming the temperature sensing device.  
     
     
         38 . The method according to  claim 37  wherein the forming the temperature sensing device comprises forming a resistance temperature device.  
     
     
         39 . The method according to  claim 32  further comprising electrically coupling the electrical interconnect with external circuitry.  
     
     
         40 . The method according to  claim 32  further comprising electrically coupling the temperature sensing device with an edge of the electronic device workpiece using the electrical interconnect.  
     
     
         41 . The method according to  claim 32  wherein the providing the electrical interconnect comprises forming a conductive trace.  
     
     
         42 . The method according to  claim 32  further comprising contacting the electrical interconnect with the temperature sensing device.  
     
     
         43 . The method according to  claim 32  wherein the method comprises a method of sensing temperature of semiconductor wafers.  
     
     
         44 . A method of semiconductor processing, comprising: 
 providing a semiconductor substrate;    anisotropically etching a cavity in the semiconductor substrate; and    providing a temperature sensing device within the cavity of the semiconductor substrate.    
     
     
         45 . The method according to  claim 44  farther comprising: 
 providing an electrical interconnect upon a surface of the semiconductor substrate; and  
 electrically coupling the electrical interconnect with the temperature sensing device.  
 
     
     
         46 . The method according to  claim 45  wherein the providing the electrical interconnect comprises forming a conductive trace.  
     
     
         47 . The method according to  claim 45  wherein the electrically coupling comprises wire bonding the electrical interconnect and the temperature sensing device.  
     
     
         48 . The method according to  claim 45  wherein the electrically coupling includes contacting the electrical interconnect and the temperature sensing device.  
     
     
         49 . The method according to  claim 45  further comprising electrically coupling the electrical interconnect with circuitry external to the semiconductor substrate.  
     
     
         50 . The method according to  claim 45  further comprising electrically coupling the temperature sensing device with an edge of the semiconductor substrate using the electrical interconnect.  
     
     
         51 . The method according to  claim 44  wherein the providing comprises forming the temperature sensing device within the cavity.  
     
     
         52 . The method according to  claim 44  wherein the providing comprises positioning the temperature sensing device within the cavity.  
     
     
         53 . A method of sensing temperature of an electronic device workpiece comprising: 
 providing an electronic device workpiece;    forming a temperature sensing device upon the electronic device workpiece, the forming including providing the temperature sensing device in a temperature sensing relation with the electronic device workpiece; and    sensing the temperature of the electronic device workpiece using the temperature sensing device.    
     
     
         54 . The method according to  claim 53  further comprising: 
 providing an electrical interconnect upon the electronic device workpiece; and  
 electrically coupling the electrical interconnect with the temperature sensing device.  
 
     
     
         55 . The method according to  claim 54  wherein the providing the electrical interconnect comprises forming a conductive trace.  
     
     
         56 . The method according to  claim 54  wherein the electrically coupling comprises wire bonding the electrical interconnect and the temperature sensing device.  
     
     
         57 . The method according to  claim 54  wherein the electrically coupling includes contacting the electrical interconnect and the temperature sensing device.  
     
     
         58 . The method according to  claim 53  further comprising: 
 forming a cavity in the electronic device workpiece; and  
 providing the temperature sensing device within the cavity.  
 
     
     
         59 . The method according to  claim 58  wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.  
     
     
         60 . The method according to  claim 53  wherein the forming comprises forming a resistance temperature device.  
     
     
         61 . The method according to  claim 53  further comprising forming plural temperature sensing devices upon the electronic device workpiece.  
     
     
         62 . A method of sensing temperature of an electronic device workpiece comprising: 
 providing an electronic device workpiece;    supporting a temperature sensing device using the electronic device workpiece;    providing the temperature sensing device in a temperature sensing relation with the electronic device workpiece;    providing an electrical interconnect upon a surface of the electronic device workpiece; and    electrically coupling the electrical interconnect with the temperature sensing device.    
     
     
         63 . The method according to  claim 62  wherein the coupling comprises wire bonding the electrical interconnect and the temperature sensing device.  
     
     
         64 . The method according to  claim 62  wherein the coupling comprises contacting the electrical interconnect with the temperature sensing device.  
     
     
         65 . The method according to  claim 62  further comprising: 
 forming a cavity in the electronic device workpiece; and  
 providing the temperature sensing device within the cavity.  
 
     
     
         66 . The method according to  claim 65  wherein the forming the cavity comprises anisotropically etching the electronic device workpiece.  
     
     
         67 . The method according to  claim 62  further comprising forming a temperature sensing, device upon the electronic device workpiece.  
     
     
         68 . The method according to  claim 62  further comprising electrically coupling the electrical interconnect with circuitry external to the electronic device workpiece.  
     
     
         69 . The method according to  claim 62  further comprising electrically coupling the temperature sensing device with an edge of the electronic device workpiece using the electrical interconnect.  
     
     
         70 . The method according to  claim 62  wherein the providing the electrical interconnect comprises forming a conductive trace.