Flip chip type semiconductor device and method of manufacturing the same

Abstract

A flip chip type semiconductor device is provided with a semiconductor chip with a plurality of pad electrodes on one surface. A solder electrode is connected to each pad electrode and a metallic post is connected to each solder electrode. The surface of the semiconductor chip on a side on which the pad electrodes are provided is coated with an insulating resin layer and whole the pad electrode and solder electrode and part of the metallic post are buried in the insulating resin layer. The remaining portion of the metallic post is projected from the insulating resin layer to form a protrusion. Then, an outer solder electrode is formed so as to cover this protrusion. The outer solder electrodes are arranged in a matrix on the insulating resin layer. The height of the protrusion is made 7 to 50% of the distance between an end of the outer solder electrode and the surface of the insulating resin layer.

What is claimed is:  
     
         1 . A flip chip type semiconductor device comprising: 
 a semiconductor chip provided with pad electrodes;    an insulating resin layer covering a surface of said semiconductor chip on a side on which said pad electrodes are provided;    metallic posts penetrating through said insulating resin layer and are connected to said pad electrodes, said metallic post comprising: 
 a first portion buried in said insulating resin layer; and  
 a second portion projected from said insulating resin layer; and  
   electrodes connected to said metallic posts provided on the surface of said insulating resin layer.    
     
     
         2 . The flip chip type semiconductor device according to  claim 1 , wherein a height of said second portion from a surface of said insulating resin layer is 7 to 50% of the height of said electrode from the surface of said insulating resin layer.  
     
     
         3 . The flip chip type semiconductor device according to  claim 1 , wherein centroids of said first and second portions are deviated from each other in a plane view.  
     
     
         4 . The flip chip type semiconductor device according to  claim 3 , wherein said second portion has: 
 a pillar-like portion whose side face is located outside of a side face of said first portion; and    a connecting portion for connecting said pillar-like portion and said first portion.    
     
     
         5 . The flip chip type semiconductor device according to  claim 1 , wherein said metallic post is formed by laminating a plurality of conductive layers.  
     
     
         6 . The flip chip type semiconductor device according to  claim 1 , further comprising one or more metal plating films formed between said metallic post and said electrode.  
     
     
         7 . The flip chip type semiconductor device according to  claim 1 , wherein said insulating resin layer contains as a main component at least one kind of resin selected from the group consisting of epoxy resins, silicon resins, polyimide resins, polyolefin resins, cyanate ester resins, phenol resins, naphthalene resins and fluorene resins.  
     
     
         8 . The flip chip type semiconductor device according to  claim 1 , wherein said metallic post is composed of at least one kind of metal selected from a group consisting of Cu, Ni, Fe, Au, Sn and Pb or an alloy thereof.  
     
     
         9 . The flip chip type semiconductor device according to  claim 6 , wherein said metal plating film brought into contact with said electrode is composed of at least one kind of metal selected from the group consisting of Cu, Ni, Au, Sn and Pb and an alloy thereof.  
     
     
         10 . A method of manufacturing a flip chip type semiconductor device comprising the steps of; 
 forming a plurality of recessed portions in a surface of a metallic substrate;    forming a metallic post on the surface of each recessed portion;    connecting the metallic post and a pad electrode of a semiconductor chip;    filling an insulating resin in a space between said metallic substrate and said semiconductor chip to form an insulating resin layer;    removing said metallic substrate; and    forming electrodes on said metallic posts.    
     
     
         11 . The method of manufacturing a flip chip type semiconductor device according to  claim 10 , wherein said recessed portion is formed by the steps of: 
 forming a resist having a plurality of apertures on a first surface of said metallic substrate; and    etching said metallic substrate by using said resist as a mask to form recessed portions; and said metallic post is formed by forming a metal plating film on said recessed portion by using said resist as a mask.    
     
     
         12 . A method of manufacturing a flip chip type semiconductor device comprising the steps of: 
 forming a plurality of projected portions on a first surface of a metallic substrate;    forming a plurality of projected portions corresponding to the projected portions formed on said first surface on a second surface of said metallic substrate;    connecting said projected portion formed on said first surface and a pad electrode of a semiconductor chip;    filling an insulating resin into a space between said metallic substrate and said semiconductor chip to form an insulating resin layer;    removing a portion other than said projected portions of said metallic substrate to partition said projected portions; and    forming electrodes on the projected portions formed on the second surface of said metallic substrate.    
     
     
         13 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein said plurality of projected portions are formed by the steps of: 
 forming a resist for masking regions on which said projected portion are to be formed; and    etching said metallic substrate by using said resist as a mask.    
     
     
         14 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein said plurality of projected portions are formed by the steps of: 
 forming a resist having apertures in regions on which said projected portions are to be formed;    forming a metal plating film on said metallic substrate surface exposed from said apertures; and    etching said metallic substrate by using said metal plating film as a mask.    
     
     
         15 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein said plurality of projected portions are formed by forming recessed and projected portions in the surface of said metallic substrate by subjecting said metallic substrate to press-molding.  
     
     
         16 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein the regions on which the projected portions are formed on the first surface are deviated from those on the second surface.  
     
     
         17 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein said plurality of projected portions are formed by the steps of: 
 selectively etching said second surface of said metallic substrate;    etching said second surface by using a first resist for masking part of the region of said second surface which is not etched as a mask; and    etching said first surface by using a second resist for masking a region of said first surface which is on the region of said second surface not etched by the first etching and deviated from the region not etched by the second etching in a plane view as mask.    
     
     
         18 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , wherein said insulating resin layer is formed and then the plurality of projected portions are formed on said second surface.  
     
     
         19 . The method of manufacturing a flip chip type semiconductor device according to  claim 12 , further comprising the steps of: 
 bonding said electrodes and second projected portions provided on a second metallic substrate, respectively, after forming said electrodes;    forming a second insulating resin layer by filling an insulating resin into a space between said second metallic substrate and said insulating resin layer;    partitioning said second projected portions by removing a portion of said second metallic substrate other than said second projected portions; and    forming second electrodes on said second projected portions.