US2003044589A1PendingUtilityA1

Ceramic board for apparatuses for semiconductor manufacture and inspection

37
Priority: Jan 21, 2000Filed: Oct 1, 2002Published: Mar 6, 2003
Est. expiryJan 21, 2020(expired)· nominal 20-yr term from priority
Inventors:Takeo Niwa
H10P 72/722C04B 41/009C04B 41/5116C04B 41/88C04B 2111/00844Y10T428/24926
37
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Claims

Abstract

The present invention has for its object to inhibit decrease in Young's modulus at high temperature without compromise in various other characteristics such as heat conductivity. The present invention is directed to a ceramic board for semiconductor manufacture and inspection comprising a conductor layer internally or on the surface thereof which is composed of nitride ceramics containing oxygen and 0.1 to 50 ppm (wt.) of Si.

Claims

exact text as granted — not AI-modified
1 . A ceramic board for apparatuses for semiconductor manufacture and inspection comprising a conductor layer formed internally or on a surface thereof, 
 which is composed of nitride ceramics containing oxygen and 0.1 to 50 ppm (wt.) of Si.    
     
     
         2 . The ceramic board for apparatuses for semiconductor manufacture and inspection according to  claim 1   which contains 0.1 to 5 weight % of oxygen.    
     
     
         3 . The ceramic board for apparatuses for semiconductor manufacture and inspection according to  claim 1  or  2 , 
 the thickness of which is 1 to 25 mm.  
 
     
     
         4 . The ceramic board for apparatuses for semiconductor manufacture and inspection according to any of  claims 1  to  3 , 
 which forms a disk with a diameter of not less than 200 mm.

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