Enhanced ion beam etch selectivity of magnetic thin films using carbon-based gases

Abstract

A method of etching a structure including a magnetic material, the method includes providing a structure including a magnetic material, applying a mask material to at least a portion of the structure, and reactive ion beam etching the magnetic material using an etch process including a carbon based compound, wherein the mask material forms a material which etches slower than the magnetic material. The etch process can further include argon ions. The carbon based compound can be a compound selected from the group of C 2 H 2 , CHF 3 , and CO 2 . The etch process can alternatively include argon ions, oxygen and either C 2 H 2 or CHF 3 . The magnetic material can comprise a compound including a material selected from the group of Fe, Ni, and Co. The mask material can comprise a layer of Ta, W, Mo, Si, Ti or a photoresist. Magnetic heads made using the process, and disc drives including such magnetic heads are also included.

What is claimed is:  
     
         1 . A method of etching a structure including a magnetic material, the method comprising: 
 providing a structure including a magnetic material;    applying a mask material to at least a portion of the structure; and    reactive ion beam etching the magnetic material using an etch process including a carbon based compound, wherein the mask material forms a material which etches slower than the magnetic material.    
     
     
         2 . The method of  claim 1 , wherein the etch process further includes argon ions.  
     
     
         3 . The method of  claim 2 , wherein the carbon based compound comprises a compound selected from the group of: 
 C 2 H 2 , CHF 3 , and CO 2 .    
     
     
         4 . The method of  claim 2 , wherein the etch process further includes oxygen and either C 2 H 2  or CHF 3 .  
     
     
         5 . The method of  claim 1 , wherein the carbon based compound comprises a compound selected from the group of: 
 C 2 H 2 , CHF 3 , and CO 2 .    
     
     
         6 . The method of  claim 1 , wherein the magnetic material comprises an alloy including a material selected from the group of: 
 Fe, Ni, and Co.    
     
     
         7 . The method of  claim 6 , wherein the mask material comprises a material selected from the group of: 
 Ta, W, Mo, Si, Ti and a photoresist.    
     
     
         8 . The method of  claim 1 , wherein the mask material forms an etch stop.  
     
     
         9 . The method of  claim 1 , wherein the mask material is applied to at least a portion of a surface of the magnetic material.  
     
     
         10 . The method of  claim 1 , wherein the structure comprises: 
 a portion of a write pole;    an etch stop layer supported by the portion of the write pole, wherein the etch stop layer supports the magnetic material;    a cap layer supported by the magnetic material, wherein the cap layer supports the mask material;    a layer of reactive ion etch mask supported by the mask material; and    a resist supported by the reactive ion etch mask.    
     
     
         11 . The method of  claim 10 , wherein the structure further comprises: 
 a buffer layer between the etch stop layer and the magnetic material.    
     
     
         12 . The method of  claim 1 , wherein the magnetic material forms a layer in a magneto-resistive stack.  
     
     
         13 . The method of  claim 1 , wherein the magnetic material forms a write pole.  
     
     
         14 . The method of  claim 1 , wherein the material which etches slower than the magnetic material comprises a carbide.  
     
     
         15 . A magnetic head made using the process of  claim 1 .  
     
     
         16 . A disc drive comprising: 
 a magnetic head made using the process of  claim 1;     means for rotating a magnetic storage medium; and    means for positioning the magnetic head adjacent to a surface of the magnetic storage medium.