Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device

Abstract

A semiconductor device is provided with a plurality of hetero junction bipolar transistors arranged in a specified direction. Also, the semiconductor device comprises emitter wiring connected to each emitter of the plural hetero junction bipolar transistors, collector wiring connected to each collector of said plural hetero junction bipolar transistors, and base wiring connected to at least one base of said plural hetero junction bipolar transistors. Bases that are not connected to the base wiring among the bases of the plural hetero junction bipolar transistors are connected to the emitter wiring.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a hetero junction bipolar transistor; and    a diode connected between a collector and an emitter of said hetero junction bipolar transistor.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein said diode is a hetero junction bipolar transistor whose base and emitter are short-circuited.  
     
     
         3 . A semiconductor device comprising: 
 a plurality of hetero junction bipolar transistors arranged in a first direction;    emitter wiring connected to each emitter of said plural hetero junction bipolar transistors;    collector wiring connected to each collector of said plural hetero junction bipolar transistors; and    base wiring connected to at least one base of said plural hetero junction bipolar transistors, wherein bases which are not connected to said base wiring among the bases of said plural hetero junction bipolar transistors are connected to said emitter wiring.    
     
     
         4 . The semiconductor device according to  claim 3 , wherein each of said plurality of hetero junction bipolar transistors has a base electrode and a collector electrode which are arranged like the teeth of a comb, said teeth of a comb extending in a second direction orthogonal to said first direction.  
     
     
         5 . A semiconductor device comprising: 
 a plurality of hetero junction bipolar transistors arranged in a first direction;    at least one diode disposed at predetermined positions between said plural hetero junction bipolar transistors;    emitter wiring connected to each emitter of said plural hetero junction bipolar transistors and to an anode of said diode;    collector wiring connected to each collector of said plural hetero junction bipolar transistors and to a cathode of said diode; and    base wiring connected to each base of said plural hetero junction bipolar transistors.    
     
     
         6 . A semiconductor integrated circuit comprising: 
 a first hetero junction bipolar transistor; and    a second hetero junction bipolar transistor whose base and emitter are connected to an emitter of said first hetero junction bipolar transistor.    
     
     
         7 . A method for manufacturing a semiconductor device, comprising the steps of: 
 forming a first conductive type collector layer on a substrate;    forming a plurality of hetero junction bipolar transistors by laminating a plurality of second conductive type base layers and a plurality of first conductive type emitter layers on said collector layer; and    forming emitter wiring connected to each of said emitter layers and to a predetermined number of said base layers.