Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

Abstract

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

What is claimed is:  
     
         1 . A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, 
 wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.    
     
     
         2 . A wiring according to  claim 1 , wherein the metal alloy film is an alloy film of tungsten and one or more kinds of elements selected from the group consisting of Ta, Ti, Mo, Cr, Nb, Si, Sc, and Nd.  
     
     
         3 . A wiring according to  claim 1 , wherein the metal compound film is an tungsten nitride film.  
     
     
         4 . A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient, 
 wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.    
     
     
         5 . A wiring according to  claim 4 , wherein the metal alloy film is an alloy film of aluminum and one or more kinds of elements selected from the group consisting of Ta, Ti, Mo, Cr, Nb, Si, Sc, and Nd.  
     
     
         6 . A wiring according to  claim 4 , wherein the metal compound film is an aluminum nitride film.  
     
     
         7 . A device having a metal wiring substrate comprising an insulating substrate and a metal wiring, 
 wherein the metal wiring is a conductive layer comprising at least one selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and    wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.    
     
     
         8 . A device according to  claim 7 , wherein the metal alloy film is an alloy film of tungsten and one or more kinds of elements selected from the group consisting of Ta, Ti, Mo, Cr, Nb, Si, Sc, and Nd.  
     
     
         9 . A device according to  claim 7 , wherein the metal compound film is an tungsten nitride film.  
     
     
         10 . A device having a metal wiring substrate comprising an insulating substrate and a metal wiring, 
 wherein the metal wiring is a conductive layer comprising at least one selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient, and    wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.    
     
     
         11 . A device according to  claim 10 , wherein the metal alloy film is an alloy film of aluminum and one or more kinds of elements selected from the group consisting of Ta, Ti, Mo, Cr, Nb, Si, Sc, and Nd.  
     
     
         12 . A device according to  claim 10 , wherein the metal compound film is an aluminum nitride film.  
     
     
         13 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a bias power density.    
     
     
         14 . A method according to  claim 13 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         15 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with an ICP power density.    
     
     
         16 . A method according to  claim 15 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         17 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a temperature of a lower electrode.    
     
     
         18 . A method according to  claim 17 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         19 . A method according to  claim 17 , wherein the temperature of the lower electrode is set to 85 to 120° C.  
     
     
         20 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a pressure.    
     
     
         21 . A method according to  claim 20 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         22 . A method according to  claim 20 , wherein the pressure is set to 2 to 13 Pa.  
     
     
         23 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a flow rate of a reaction gas.    
     
     
         24 . A method according to  claim 23 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         25 . A method according to  claim 23 , wherein a total flow rate of the reaction gas is set to 2×10 3  to 11×10 3  sccm/m 3 .  
     
     
         26 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle cc in accordance with a ratio of oxygen in a reaction gas.    
     
     
         27 . A method according to  claim 26 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         28 . A method according to  claim 26 , wherein the ratio of oxygen in the reaction gas is set to 17 to 50%.  
     
     
         29 . A method of manufacturing a metal wiring comprising: 
 forming at least one layer of conductive film is formed on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a ratio of chlorine in a reaction gas.    
     
     
         30 . A method according to  claim 29 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, and a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         31 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a bias power density.    
     
     
         32 . A method according to  claim 31 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         33 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with an ICP power density.    
     
     
         34 . A method according to  claim 33 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         35 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle á in accordance with a temperature of a lower electrode.    
     
     
         36 . A method according to  claim 35 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         37 . A method according to  claim 35 , wherein the temperature of the lower electrode is set to 85 to 120° C.  
     
     
         38 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a pressure.    
     
     
         39 . A method according to  claim 38 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         40 . A method according to  claim 38 , wherein the pressure is set to 2 to 13 Pa.  
     
     
         41 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a flow rate of a reaction gas.    
     
     
         42 . A method according to  claim 41 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         43 . A method according to  claim 41 , wherein a total flow rate of the reaction gas is set to 2×10 3  to 11×10 3  sccm/m 3 .  
     
     
         44 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a ratio of oxygen in a reaction gas.    
     
     
         45 . A method according to  claim 44 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.  
     
     
         46 . A method according to  claim 44 , wherein a ratio of oxygen in the reaction gas is set to 17 to 50%.  
     
     
         47 . A method of manufacturing a metal wiring substrate comprising an insulating substrate and a metal wring, said method comprising: 
 forming at least one layer of conductive film on an insulating surface;    forming a resist pattern on the conductive film; and    etching the conductive film having the resist pattern to form a metal wiring while controlling its taper angle α in accordance with a ratio of chlorine in a reaction gas.    
     
     
         48 . A method according to  claim 47 , wherein the conductive film is a thin film selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient, or a thin film selected from the group consisting of an aluminum film, a metal compound film with an aluminum compound as its main ingredient, and a metal alloy film with an aluminum alloy as its main ingredient.