Laminated radiation member, power semiconductor apparatus, and method for producing the same

Abstract

A laminated radiation member includes a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate. The laminated radiation member is made by a method including the steps of surface treating a bonding surface of the radiation plate and/or the insulation substrate, interposing ceramic particles surface treated to assure wettability with a hard solder or a metal between the radiation plate and the insulation substrate, disposing a hard solder above and/or below the ceramic particles, heating the hard solder to a temperature higher than the melting point of the solder, penetrating the molten hard solder into spaces between the ceramic particles to react the ceramic particles with the solder to produce a metal base composite material, and bonding the radiation plate and the insulation substrate with the metal base composite material.

What is claimed is:  
     
         1 . A power semiconductor apparatus comprising a circuit electrode, a laminated radiation member comprising a radiation plate and an insulation substrate, a semiconductor chip bonded to the circuit electrode formed at the laminated radiation member and a metal wire electrically connected to the semiconductor chip, said metal wire electrically connected to the circuit electrode, said semiconductor chip, said laminated radiation member and said circuit electrode being sealed with an insulating sealer, said laminated radiation member comprising a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate, wherein said radiation plate and said insulation substrate are bonded with a metal base composite material layer in which ceramic particles are dispersed and which is present between the radiation plate and the insulation substrate.