US2003030137A1PendingUtilityA1

Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

Assignee: SEIKO EPSON CORPPriority: Sep 9, 1998Filed: Oct 10, 2002Published: Feb 13, 2003
Est. expirySep 9, 2018(expired)· nominal 20-yr term from priority
H10W 90/734H10W 90/732H10W 90/724H10W 90/291H10W 90/231H10W 72/9415H10W 72/9223H10W 72/5522H10W 72/942H10W 72/923H10W 72/877H10W 72/856H10W 72/241H10W 72/072H10W 72/60H10W 70/63H10W 90/701H10W 90/00H10W 74/15H10W 74/012H10W 70/688H10W 90/401H10W 72/9445H10W 70/611H10W 72/90
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Claims

Abstract

A semiconductor device comprises a plurality of semiconductor chips ( 20, 30 ) having electrodes ( 22, 32 ) and aligned in the horizontal direction; a substrate ( 10 ) on which is formed an interconnect pattern ( 12 ) having bonding portions ( 14 ) connected to the electrodes ( 22, 32 ) of the semiconductor chips ( 20, 30 ) and lands ( 16 ) connected to the bonding portions ( 14 ), and external electrodes ( 40 ) provided on the lands ( 16 ) and connected to the electrodes ( 22,32 ) through an interconnect pattern ( 12 ).

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising: 
 a plurality of semiconductor chips having electrodes, and aligned in a horizontal direction for face-down bonding;    a substrate on which an interconnect pattern is formed, the interconnect pattern having bonding portions to which the electrodes of the semiconductor chip are connected, and lands to which the bonding portions are electrically connected; and    external electrodes provided on the lands.    
     
     
         2 . The semiconductor device as defined in  claim 1 , 
 wherein the external electrodes are disposed within mounting regions of the semiconductor chips.    
     
     
         3 . The semiconductor device as defined in  claim 1 , 
 wherein the external electrodes are disposed outside regions where the semiconductor chips are mounted.    
     
     
         4 . The semiconductor device as defined in  claim 3 , 
 wherein the substrate is a flexible substrate and is formed to be larger than the regions where the semiconductor chips are mounted, and a flat support member is provided on a periphery of the substrate.    
     
     
         5 . The semiconductor device as defined in  claim 1 , 
 wherein the external electrodes are disposed within a region where any one of the semiconductor chips is mounted.    
     
     
         6 . The semiconductor device as defined in  claim 5 , 
 wherein the substrate is a flexible substrate and part of the substrate is bent; and    wherein a surface of the one semiconductor chip, which is disposed at a region where the external electrodes are provided, opposite to a surface on which the electrodes are formed is adhered to a surface of at least one remaining semiconductor chip opposite to a surface on which the electrodes are formed.    
     
     
         7 . The semiconductor device as defined in  claim 6 , 
 wherein the substrate has at least one hole formed along a region to be bent.    
     
     
         8 . The semiconductor device as defined in  claim 7 , 
 wherein the hole is a slot extending along a bending line;    wherein the interconnect pattern is formed to pass over the hole; and    wherein an edge of the slot extending along the bending line forms a part of an outer edge.    
     
     
         9 . The semiconductor device as defined in  claim 7 , 
 wherein a plurality of the holes are formed;    wherein the interconnect pattern is formed to pass over the plurality of holes; and    wherein the holes are slots extending along a bending line, and are aligned.    
     
     
         10 . The semiconductor device as defined in  claim 6 , 
 wherein the substrate has a slit formed along a region to be bent; and    wherein the substrate is divided by the slit, and a gap is opened up between opposing divided edges.    
     
     
         11 . The semiconductor device as defined in  claim 10 , 
 wherein a joining member is provided spanning the slit.    
     
     
         12 . The semiconductor device as defined in  claim 8 , 
 wherein a flexible resin is provided on the interconnect pattern in the hole; and    wherein the resin is bent together with the substrate.    
     
     
         13 . The semiconductor device as defined in  claim 6 , 
 wherein the semiconductor chips are adhered by an electrically conductive adhesive or a thermally conductive adhesive.    
     
     
         14 . The semiconductor device as defined in  claim 5 , 
 wherein a surface area of one of the semiconductor chips is larger than a surface area of a remaining semiconductor chip; and    wherein the external electrodes are formed only in a region where the semiconductor chip having a larger surface area is provided.    
     
     
         15 . The semiconductor device as defined in  claim 1 , 
 wherein the electrodes of the semiconductor chips are connected to the bonding portions by an anisotropically conductive material including conductive particles dispersed in an adhesive.    
     
     
         16 . A method of manufacturing a semiconductor device, comprising: 
 a step of providing a substrate on which an interconnect pattern is formed, the interconnect pattern having a plurality of bonding portions and a plurality of lands electrically connected to the bonding portions, and providing a plurality of semiconductor chips having electrodes;    a step of providing anisotropically conductive materials including conductive particles dispersed in an adhesive at least on the bonding portions;    a step of positioning the electrodes over the bonding portions on the anisotropically conductive materials, and mounting the semiconductor chips over the substrate;    a step of applying pressure to at least one of the semiconductor chips and the substrate so that the bonding portions and the electrodes are electrically connected by the conductive particles; and    a step of forming external electrodes on the lands.    
     
     
         17 . The method of manufacturing a semiconductor device as defined in  claim 16 , 
 wherein the substrate is a flexible substrate and is formed to be larger than the regions where the semiconductor chips are mounted; and    wherein a flat support member is provided on a periphery of the substrate.    
     
     
         18 . The method of manufacturing a semiconductor device as defined in  claim 16 , the method further comprising a step of bending a part of the substrate, after the step of mounting the semiconductor chips on the substrate, so that a surface of one of the semiconductor chips opposite to a surface where the electrodes are provided is adhered to a surface of another of the semiconductor chips opposite to a surface on which the electrodes are formed.  
     
     
         19 . The method of manufacturing a semiconductor device as defined in  claim 18 , 
 wherein the substrate has at least one hole formed along a region to be bent.    
     
     
         20 . A circuit board on which the semiconductor device as defined in any one of  claims 1  to  15  is mounted.  
     
     
         21 . An electronic instrument on which the circuit board as defined in  claim 20  is mounted.

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